Photo detectors

1. A photo detector, comprising:

a first photo diode configured to capture visible light;

a second photo diode configured to capture infrared light;

a third photo diode configured to capture ultraviolet light;

a first isolation region between the first photo diode and the second photo diode; and

a second isolation region between the second photo diode and the third photo diode.

2. The photo detector of claim 1 , wherein the second photo diode comprises at least one of Indium Gallium Arsenide (InGaAs) and Mercury Cadmium Telluride (HgCdTe).

3. The photo detector of claim 1 , wherein the third photo diode comprises at least one of Gallium Nitride (GaN), Aluminum Gallium Nitride (AlGaN), Indium Gallium Nitride (InGaN), and Zinc Oxide (ZnO).

4. The photo detector of claim 1 , wherein the first isolation region and the second isolation region comprise Shallow Trench Isolation (STI) regions.

5. The photo detector of claim 1 , wherein the first photo diode comprises Silicon (Si).

6. The photo detector of claim 1 , wherein the first photo diode comprises a first substrate, a first doped region on the first substrate, a first undoped region on the first doped region, and a second doped region on the first undoped region.

7. The photo detector of claim 6 , wherein the first doped region comprises a P+ doped region and the second doped region comprises an N+ doped region.

8. The photo detector of claim 1 , wherein the second photo diode comprises a second substrate, a first hard mask layer comprising a plurality of trenches on the second substrate, a third doped region on the first hard mask layer, a second undoped region on the third doped region, and a fourth doped region on the second undoped region.

9. The photo detector of claim 8 , wherein the first hard mask layer comprises at least one of Silicon Nitride (SiN) and Hafnium Oxide (HfO 2 ).

10. The photo detector of claim 8 , wherein the plurality of trenches of the first hard mask layer comprises a same material as the second undoped region.

11. The photo detector of claim 8 , wherein each trench in the plurality of trenches of the first hard mask layer has an aspect ratio of at least 5.

12. The photo detector of claim 8 , wherein the third doped region comprises a P+ doped region and the fourth doped region comprises an N+ doped region.

13. The photo detector of claim 1 , wherein the third photo diode comprises a third substrate, a second hard mask layer comprising a plurality of trenches on the third substrate, a fifth doped region on the second hard mask layer, a third undoped region on the fifth doped region, and a sixth doped region on the third undoped region.

14. The photo detector of claim 13 , wherein the second hard mask layer comprises at least one of SiN and HfO 2 .

15. The photo detector of claim 13 , wherein the plurality of trenches of the second hard mask layer comprises a same material as the third undoped region.

16. The photo detector of claim 13 , wherein the fifth doped region comprises a P+ doped region and the sixth doped region comprises an N+ doped region.

17. A method for fabricating a photo detector, comprising:

forming a plurality of layers on a substrate;

forming a first photo diode for capturing visible light on the substrate; and

forming a second photo diode for capturing one of infrared light or ultraviolet light on the substrate, wherein the first photo diode is separated from the second photo diode by a first isolation region.

18. The method of claim 17 , further comprising forming a third photo diode for capturing one of infrared light or ultraviolet light on the substrate, wherein the second photo diode is separated from the third photo diode by a second isolation region.

19. The method of claim 17 , wherein the plurality of layers comprises a first doped layer on the substrate, a first undoped layer on the first doped layer, and a second doped layer on the first undoped layer.

20. The method of claim 18 , wherein the first isolation region and the second isolation region comprise Shallow Trench Isolation (STI) regions.

21. The method of claim 18 , wherein the second photo diode is for capturing infrared light and the third photo diode is for capturing ultraviolet light.

22. The method of claim 21 , wherein the first photo diode comprises Silicon (Si), the second photo diode comprises at least one of Indium Gallium Arsenide (InGaAs) and Mercury Cadmium Telluride (HgCdTe), and the third photo diode comprises at least one of Gallium Nitride (GaN), Aluminum Gallium Nitride (AlGaN), Indium Gallium Nitride (InGaN), and Zinc Oxide (ZnO).

23. The method of claim 17 , wherein forming the second photo diode for capturing one of infrared light or ultraviolet light on the substrate comprises:

removing the plurality of layers;

forming a hard mask layer;

forming a plurality of trenches in the hard mask layer; and

forming a semiconductor material in the plurality of trenches and on the hard mask layer.

24. The method of claim 23 , wherein the semiconductor material is formed by epitaxy growth.

25. The method of claim 23 , wherein the semiconductor material comprises a third doped layer, a fourth doped layer, and a second undoped layer between the third doped layer and the fourth doped layer.

26. The method of claim 25 , wherein the third doped layer comprises a P+ doped layer and the fourth doped layer comprises an N+ doped layer.

27. The method of claim 23 , wherein the hard mask layer comprises at least one of Silicon Nitride (SiN) and Hafnium Oxide (HfO 2 ).

28. The method of claim 23 , wherein each trench in the plurality of trenches has an aspect ratio of at least 5.