Front end module for 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit
A front end module (FEM) for a 5.2 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.2 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.2 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.2 GHz PA, a 5.2 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.
1. A 5.2 GHz front end module (FEM) device, the device comprising:
a power amplifier (PA) electrically coupled to an input node;
a 5.2 GHz bulk acoustic wave (BAW) resonator electrically coupled to the PA, wherein the 5.2 GHz BAW resonator comprises
a substrate having a cavity region;
a piezoelectric layer formed overlying the substrate;
a topside metal electrode formed overlying the piezoelectric layer and a portion of the cavity region;
a backside metal electrode formed underlying the piezoelectric layer within the cavity region; and
a micro-via formed within a portion of the piezoelectric layer, the micro-via electrically coupled to the backside metal electrode; and
a diversity switch electrically coupled the 5.2 GHz BAW resonator, an output node, and an antenna.
2. The device of claim 1 wherein the PA comprises a 5.2 GHz power amplifier.
3. The device of claim 1 wherein the 5.2 GHz BAW resonator comprises a 5.2 GHz bulk acoustic wave (BAW) RF filter.
4. The device of claim 1 wherein the diversity switch comprises a single pole two throw (SP2T) switch.
5. The device of claim 1 further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node.
6. The device of claim 5 wherein the LNA comprises a bypassable LNA.
7. The device of claim 1 further comprising a DC power detector having a voltage output, the DC power detector being electrically coupled to the PA.
8. The device of claim 1 further comprising an RF power detector having an RF output from a directional coupler, the RF power detector being electrically coupled to the PA.
9. A 5.2 GHz front end module (FEM) device, the device comprising:
a power amplifier (PA) electrically coupled to an input node;
a diversity switch electrically coupled to the PA and an output node; and
a 5.2 GHz BAW resonator electrically coupled to the diversity switch and an antenna;
wherein the 5.2 GHz BAW resonator comprises
a substrate having a cavity region;
a piezoelectric layer formed overlying the substrate;
a topside metal electrode formed overlying the piezoelectric layer and a portion of the cavity region;
a backside metal electrode formed underlying the piezoelectric layer within the cavity region; and
a micro-via formed within a portion of the piezoelectric layer, the micro-via electrically coupled to the backside metal electrode.
10. The device of claim 9 wherein the PA comprises a 5.2 GHz power amplifier.
11. The device of claim 9 wherein the 5.2 GHz resonator comprises a 5.2 GHz bulk acoustic wave (BAW) RF filter.
12. The device of claim 9 wherein the diversity switch comprises a single pole two throw (SP2T) switch.
13. The device of claim 8 further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node.
14. The device of claim 13 wherein the LNA comprises a bypassable LNA.
15. The device of claim 9 further comprising a DC power detector having a voltage output, the DC power detector being electrically coupled to the PA.
16. The device of claim 9 further comprising an RF power detector having an RF output from a directional coupler, the RF power detector being electrically coupled to the PA.
17. A 5.2 GHz front end module (FEM) device, the device comprising:
a power amplifier (PA) electrically coupled to an input node;
a first 5.2 GHz BAW resonator electrically coupled to the PA;
a diversity switch electrically coupled the 5.2 GHz BAW resonator and an antenna; and
a second 5.2 GHz BAW resonator electrically coupled to the diversity switch;
wherein at least one or the first 5.2 GHz BAW resonator and the second 5.2 GHz BAW resonator comprises
a substrate having a cavity region;
a piezoelectric layer formed overlying the substrate;
a topside metal electrode formed overlying the piezoelectric layer and a portion of the cavity region;
a backside metal electrode formed underlying the piezoelectric layer within the cavity region; and
a micro-via formed within a portion of the piezoelectric layer, the micro-via electrically coupled to the backside metal electrode.
18. The device of claim 17 wherein the PA comprises a 5.2 GHz power amplifier.
19. The device of claim 17 wherein the first and second 5.2 GHz resonators each comprise a 5.2 GHz bulk acoustic wave (BAW) RF filter.
20. The device of claim 17 wherein the diversity switch comprises a single pole two throw (SP2T) switch.
21. The device of claim 20 further comprising a low noise amplifier (LNA) electrically coupled to the second 5.2 GHz BAW resonator and an LNA output node.
22. The device of claim 21 wherein the LNA comprises a bypassable LNA.
23. The device of claim 17 further comprising a DC power detector having a voltage output, the DC power detector being electrically coupled to the PA.
24. The device of claim 17 further comprising an RF power detector having an RF output from a directional coupler, the RF power detector being electrically coupled to the PA.
25. A 5.2 GHz front end module (FEM) device, the device comprising:
a power amplifier (PA) electrically coupled to an input node;
a first 5.2 GHz BAW resonator electrically coupled to the PA;
a diversity switch electrically coupled the 5.2 GHz BAW resonator and an antenna; and
a second 5.2 GHz BAW resonator electrically coupled to the diversity switch;
wherein at least one or the first 5.2 GHz BAW resonator and the second 5.2 GHz BAW resonator comprises
a substrate having a cavity region;
a piezoelectric layer formed overlying the substrate;
a topside metal electrode formed overlying the piezoelectric layer and a portion of the cavity region;
a backside metal electrode formed underlying the piezoelectric layer within the cavity region; and
a micro-via formed within a portion of the piezoelectric layer, the micro-via electrically coupled to the backside metal electrode.
26. The device of claim 25 wherein the PA comprises a 5.2 GHz power amplifier.
27. The device of claim 25 wherein the first and second 5.2 GHz BAW resonators each comprise a 5.2 GHz bulk acoustic wave (BAW) RF filter.
28. The device of claim 25 wherein the diversity switch comprises a single pole three throw (SP3T) switch.
29. The device of claim 25 further comprising a low noise amplifier (LNA) electrically coupled to the second 5.2 GHz BAW resonator and an LNA output node.
30. The device of claim 29 wherein the LNA comprises a bypassable LNA.
31. The device of claim 25 further comprising a DC power detector having a voltage output, the DC power detector being electrically coupled to the PA.
32. The device of claim 25 further comprising an RF power detector having an RF output from a directional coupler, the RF power detector being electrically coupled to the PA.
33. A 5.2 GHz front end module (FEM) device, the device comprising:
a power amplifier (PA) electrically coupled to an input node;
a diversity switch electrically coupled the PA and an output node; and
a 5.2 GHz BAW resonator electrically coupled to the diversity switch and an antenna;
wherein the 5.2 GHz BAW resonator comprises
a substrate having a cavity region;
a piezoelectric layer formed overlying the substrate;
a topside metal electrode formed overlying the piezoelectric layer and a portion of the cavity region;
a backside metal electrode formed underlying the piezoelectric layer within the cavity region; and
a micro-via formed within a portion of the piezoelectric layer, the micro-via electrically coupled to the backside metal electrode.
34. The device of claim 33 wherein the PA comprises a 5.2 GHz power amplifier.
35. The device of claim 33 wherein the 5.2 GHz resonator comprises a 5.2 GHz bulk acoustic wave (BAW) RF filter.
36. The device of claim 33 wherein the diversity switch comprises a single pole three throw (SP3T) switch.
37. The device of claim 33 further comprising a low noise amplifier (LNA) electrically coupled to an LNA input node and an LNA output node; and
wherein the diversity switch is electrically coupled to the LNA output node.
38. The device of claim 37 wherein the LNA comprises a bypassable LNA.
39. The device of claim 33 further comprising a DC power detector having a voltage output, the DC power detector being electrically coupled to the PA.
40. The device of claim 33 further comprising an RF power detector having an RF output from a directional coupler, the RF power detector being electrically coupled to the PA.