Interface layer with mesh and sinter paste
An interface layer includes an electrically conductive compressible mesh that has wires that are interwoven and pores between the wires. A sinter paste is immobilized in the pores. The sinter paste includes electrically conductive particles.
1. An interface layer comprising:
an electrically conductive compressible mesh having wires that are interwoven and pores between the wires; and
a sinter paste immobilized in the pores, the sinter paste including electrically conductive particles.
2. The interface layer as recited in claim 1 , wherein the wires are copper wires.
3. The interface layer as recited in claim 1 , wherein the particles have a composition, by weight, of greater than 99% copper.
4. The interface layer as recited in claim 1 , wherein the mesh has a mesh size of 50-80.
5. The interface layer as recited in claim 4 , wherein the wires have a wire diameter of 0.05 millimeters to 0.5 millimeters.
6. The interface layer as recited in claim 1 , wherein the mesh is a plain weave.
7. The interface layer as recited in claim 1 , wherein the wires are copper wires and the particles have a composition, by weight, of greater than 99% copper.
8. The interface layer as recited in claim 7 , wherein the mesh is a plain weave.
9. The interface layer as recited in claim 8 , wherein the mesh has a mesh size of 50-80 and the wires have a wire diameter of 0.05 millimeters to 0.5 millimeters.
10. The interface layer as recited in claim 1 , wherein the mesh is a plain weave and has a mesh size of 50-80.
11. The interface layer as recited in claim 10 , wherein the wires are copper wires.
12. The interface layer as recited in claim 11 , wherein the particles have a composition, by weight, of greater than 99% copper.
13. The interface layer as recited in claim 12 , wherein the wire has a wire diameter of 0.05 millimeters to 0.5 millimeters.
14. An electronic device comprising:
first and second components; and
an interface layer situated between the first and second components, the interface layer including,
an electrically conductive mesh having wires that are interwoven and pores between the wires, and
electrically conductive sintered bodies disposed in the pores.
15. The electronic device as recited in claim 14 , wherein the wires are copper wires.
16. The electronic device as recited in claim 14 , wherein the sintered bodies have a composition, by weight, of greater than 99% copper.
17. The electronic device as recited in claim 14 , wherein the mesh is a plain weave.
18. The electronic device as recited in claim 14 , wherein the interface layer has a thermal conductivity of 180 W/m° K to 260 W/m° K.
19. A method of fabricating an electronic device, the method comprising:
compressing an interface layer between first and second components to reduce a thickness of the interface layer, the interface layer including an electrically conductive mesh having wires that are interwoven, pores between the wires, and a sinter paste that is immobilized in the pores, the sinter paste including electrically conductive particles; and
heating the interface layer to consolidate the electrically conductive particles into sintered bodies in the pores.
20. The method as recited in claim 19 , where the heating is conducted under an inert cover gas at a temperature of 225° C. to 300° C.
21. The method as recited in claim 19 , wherein the heating is pressureless heating.
22. The method as recited in claim 19 , wherein the heating is conducted under a pressure of 10 MPa to 40 Mpa.