RF switch with compensation
A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.
1. A radio frequency (RF) switch device comprising:
a first transistor and a second transistor, wherein the first and second transistors are coupled in series at a first source/drain terminal of the second transistor to establish a switchable RF path; and
a first compensation network directly coupled between a body terminal of the first transistor and a second source/drain terminal of the second transistor,
wherein the first compensation network is configured to establish a path for current flowing between the body terminal of the first transistor and the second source/drain terminal of the second transistor in a first direction and to block current flowing therebetween in a second direction opposite to the first direction.
2. The RF switch device of claim 1 , wherein the current flowing in the first direction is configured to be less than or equal to a leakage current associated with the body terminal of the first transistor.
3. The RF switch device of claim 1 , wherein a leakage current associated with the body terminal of the first transistor comprises a gate-induced source leakage current or a gate-induced drain leakage current.
4. The RF switch device of claim 1 , wherein the first compensation network comprises a diode circuit.
5. The RF switch device of claim 4 , wherein the diode circuit comprises a diode or a plurality of diodes coupled in series.
6. The RF switch device of claim 1 , wherein the first compensation network comprises a diode-connected transistor circuit.
7. The RF switch device of claim 6 , wherein the diode-connected transistor circuit comprises:
a diode-connected transistor; a diode-connected transistor coupled in series with a resistor; a diode-connected transistor having a resistor coupled between a drain terminal and a gate terminal of the diode-connected transistor; or a diode-connected transistor having a first resistor coupled between a drain terminal and a gate terminal of the diode-connected transistor, and a second resistor coupled in series with a source terminal of the diode-connected transistor.
8. The RF switch device of claim 1 , further comprising a third transistor interposed between the first and second transistors.
9. The RF switch device of claim 1 , further comprising a second compensation network coupled between the body terminal of the second transistor and a source/drain terminal of the first transistor.
10. The RF switch device of claim 9 , wherein the second compensation network comprises a rectifying element.
11. The RF switch device of claim 9 , wherein the current flowing through the second compensation network is configured to be less than or equal to a leakage current associated with the body terminal of the second transistor.
12. A radio frequency (RF) switch device comprising:
a plurality of transistors in series connection forming a switchable current path; and
a plurality of first compensation networks directly coupled between a body terminal of an Nth transistor of the plurality of transistors and a drain terminal of an (N+1)th transistor of the plurality of transistors,
wherein each of the first compensation networks comprises a rectifying element, wherein the series connection is formed between a source terminal of the (N+1)th transistor and a drain terminal of the Nth transistor, and wherein N is a positive integer.
13. The RF switch device of claim 12 , wherein the plurality of first compensation networks is less than the plurality of transistors.
14. The RF switch device of claim 12 , further comprising a plurality of second compensation networks coupled between a body terminal of an (M+1)th transistor of the plurality of transistors and a source terminal of an Mth transistor of the plurality of transistors,
wherein each of the second compensation networks comprises a rectifying element, and wherein M is a positive integer.
15. The RF switch device of claim 14 , wherein the plurality of second compensation networks is less than the plurality of transistors.
16. A method of compensating a radio frequency (RF) switch device comprising a first transistor and a second transistor forming a switchable current path, the method comprising causing a first compensation current to flow directly between a body terminal of the first transistor and a drain terminal of the second transistor in a first direction and blocking current flowing therebetween in a second direction opposite to the first direction.
17. The method of claim 16 , further comprising generating a second compensation current between a body terminal of the second transistor and a source terminal of the first transistor in a first direction and blocking current flowing therebetween in a second direction opposite to the first direction.
18. The method of claim 17 , further comprising applying an alternating voltage signal to the RF switch.
19. The method of claim 18 , wherein the first compensation current is generated during a first half-period of the applied alternating voltage signal, and the second compensation current is generated during a second half-period of the applied alternating voltage signal.
20. The method of claim 19 , wherein the first compensation current is less than or equal to a leakage current at the body terminal of the first transistor, and wherein the second compensation current is less than or equal to a leakage current at the body terminal of the second transistor.
21. A radio frequency (RF) switch device comprising:
a first transistor and a second transistor, wherein the first and second transistors are coupled in series at a common node to establish a switchable RF path between a load terminal of the second transistor and a load terminal of the first transistor; and
a compensation network directly coupled between a body terminal of the first transistor and the load terminal of the second transistor,
wherein the compensation network is configured to establish a path for current flowing between the body terminal of the first transistor and the load terminal of the second transistor in a first direction and to block current flowing therebetween in a second direction opposite to the first direction.