IP Library Granted Patent US 10,686,157
Granted Patent B2
US 10,686,157 · App. 15/707,383 · Granted Jun 16, 2020

Light-emitting device and method for manufacturing light-emitting device

Inventors: Akihiro Chida (Kanagawa, JP); Tomoya Aoyama (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5246H01L51/0097
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Quick Facts
Patent No.
US 10,686,157
App. No.
15/707,383
Granted
Jun 16, 2020
Kind
B2
Abstract

A highly reliable flexible light-emitting device is provided. The light-emitting device includes a first flexible substrate, a second flexible substrate, a light-emitting element between the first flexible substrate and the second flexible substrate, a first bonding layer; and a second bonding layer in a frame shape surrounding the first bonding layer. The first bonding layer and the second bonding layer are between the second flexible substrate and the light-emitting element. The light-emitting element includes layer containing a light-emitting organic compound between the pair of electrodes. The second bonding layer has a higher gas barrier property than the first bonding layer.

Claims (55)

1. A light-emitting device comprising:

a first flexible substrate;

a second flexible substrate;

a light-emitting element between the first flexible substrate and the second flexible substrate;

a first bonding layer between the second flexible substrate and the light-emitting element;

a second bonding layer surrounding the first bonding layer; and

a third bonding layer surrounding the second bonding layer,

wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a pair of electrodes, and

wherein at least one of the second bonding layer and the third bonding layer has a higher gas barrier property than the first bonding layer.

2. The light-emitting device according to claim 1 , wherein the second bonding layer has a frame shape.

3. The light-emitting device according to claim 1 , wherein a permeation amount of water vapor of one or both of the second bonding layer and the third bonding layer is lower than or equal to 1×10 −8 [g/m 2 ·day].

4. The light-emitting device according to claim 1 , further comprising:

a transistor between the first flexible substrate and the light-emitting element; and

an adhesive layer between the first flexible substrate and the transistor.

5. The light-emitting device according to claim 1 , further comprising:

a first insulating layer between the first flexible substrate and the light-emitting element;

a transistor between the first insulating layer and the light-emitting element;

a coloring layer between the light-emitting element and the second flexible substrate; and

a second insulating layer between the coloring layer and the second flexible substrate.

6. An electronic device comprising the light-emitting device according to claim 1 .

7. A lighting device comprising the light-emitting device according to claim 1 .

8. A light-emitting device comprising:

a first flexible substrate;

a second flexible substrate;

a light-emitting element between the first flexible substrate and the second flexible substrate;

a first bonding layer between the second flexible substrate and the light-emitting element; and

a second bonding layer surrounding the first bonding layer,

wherein the light-emitting element comprises a layer containing a light-emitting organic compound between a pair of electrodes,

wherein the second bonding layer has a higher gas barrier property than the first bonding layer,

wherein the first bonding layer has a higher refractive index than the second bonding layer, and

wherein the first bonding layer has a higher light-transmitting property than the second bonding layer.

9. The light-emitting device according to claim 8 , wherein the second bonding layer has a frame shape.

10. The light-emitting device according to claim 8 , wherein a permeation amount of water vapor of the second bonding layer is lower than or equal to 1×10 −8 [g/m 2 ·day].

11. The light-emitting device according to claim 8 , further comprising:

a transistor between the first flexible substrate and the light-emitting element; and

an adhesive layer between the first flexible substrate and the transistor.

12. The light-emitting device according to claim 8 , further comprising:

a first insulating layer between the first flexible substrate and the light-emitting element;

a transistor between the first insulating layer and the light-emitting element;

a coloring layer between the light-emitting element and the second flexible substrate; and

a second insulating layer between the coloring layer and the second flexible substrate.

13. An electronic device comprising the light-emitting device according to claim 8 .

14. A lighting device comprising the light-emitting device according to claim 8 .

15. The light-emitting device according to claim 1 , wherein a thickness of the first bonding layer is different from a thickness of the second bonding layer.

16. The light-emitting device according to claim 8 , wherein a thickness of the first bonding layer is different from a thickness of the second bonding layer.

17. The light-emitting device according to claim 1 , further comprising:

a first insulating layer and a second insulating layer between the first flexible substrate and the second flexible substrate; and

a light emitting portion and a first portion;

wherein the first portion is located outside the light emitting portion, and

wherein a shortest distance between a part of the first insulating layer and a part of the second insulating layer overlapping with the light emitting portion and a shortest distance between a part of the first insulating layer and a part of the second insulating layer overlapping with the first portion are different from each other.

18. The light-emitting device according to claim 8 , further comprising:

a first insulating layer and a second insulating layer between the first flexible substrate and the second flexible substrate; and

a light emitting portion and a first portion;

wherein the first portion is located outside the light emitting portion, and

wherein a shortest distance between a part of the first insulating layer and a part of the second insulating layer overlapping with the light emitting portion and a shortest distance between a part of the first insulating layer and a part of the second insulating layer overlapping with the first portion are different from each other.

Priority Claims (2)
JP 2013-184698 · Sep 6, 2013 · national
JP 2013-218601 · Oct 21, 2013 · national
Continuity (2)
Division 14476154 · Sep 3, 2014
Related Publication 20180026228A1 · Jan 25, 2018
Cited By (3)
US 12,200,033 US 12,232,396 US 12,677,357