Magnetic memory devices

1. A magnetic random access memory (MRAM) device comprising:

a magnetic tunnel junction (MTJ) including a free layer and a pinned layer sequentially stacked in a vertical direction; and

a conductive layer adjacent to the free layer of the MTJ, wherein the conductive layer comprises:

a horizontal portion; and

first and second protruding portions that protrude away from the horizontal portion and are spaced apart from each other in a horizontal direction that is perpendicular to the vertical direction,

wherein a side of the free layer and a side of the horizontal portion form a straight side.

2. The MRAM device of claim 1 , wherein the horizontal portion is configured to exert spin-orbit torque to the free layer when current flows in the horizontal direction from the first protruding portion to the second protruding portion.

3. The MRAM device of claim 1 , wherein the horizontal portion comprises a material different from the first and second protruding portions.

4. The MRAM device of claim 1 , wherein the MTJ overlaps the first and second protruding portions.

5. The MRAM device of claim 1 , wherein a side of the first protruding portion is recessed toward the second protruding portion with respect to the side of the horizontal portion in a plan view.

6. The MRAM device of claim 1 , further comprising first and second conductive contacts that are spaced apart from each other in the horizontal direction and are connected to the first and second protruding portions, respectively,

wherein the conductive layer is between the MTJ and the first and second conductive contacts.

7. A magnetic random access memory (MRAM) device comprising:

a magnetic tunnel junction (MTJ) including a free layer and a pinned layer sequentially stacked in a vertical direction; and

a conductive layer adjacent to the free layer of the MTJ, wherein the conductive layer comprises:

a horizontal portion comprising a first surface facing the MTJ and a second surface opposite the first surface; and

first and second protruding portions that protrude away from the second surface of the horizontal portion and are spaced apart from each other in a horizontal direction that is perpendicular to the vertical direction,

wherein the first protruding portion comprises a first side facing the second protruding portion and a second side opposite the first side of the first protruding portion, and

wherein the second side of the first protruding portion is recessed toward the second protruding portion with respect to a side of the horizontal portion in a plan view.

8. The MRAM device of claim 7 , wherein a side of the free layer of the MTJ and the side of the horizontal portion of the conductive layer are aligned.

9. The MRAM device of claim 8 , wherein a portion of the second side of the first protruding portion is aligned with the sides of the free layer of the MTJ and the horizontal portion of the conductive layer.

10. The MRAM device of claim 7 , wherein the free layer is between the horizontal portion of the conductive layer and the pinned layer.

11. The MRAM device of claim 7 , wherein the second protruding portion comprises a first side facing the first protruding portion and a second side opposite the first side of the second protruding portion,

wherein the side of the horizontal portion comprises a first side, and the horizontal portion further comprises a second side opposite the first side of the horizontal portion, and

wherein the second side of the second protruding portion is recessed toward the first protruding portion with respect to the second side of the horizontal portion in the plan view.

12. The MRAM device of claim 7 , wherein the MTJ overlaps an entirety of an interface between the horizontal portion and the first protruding portion.

13. The MRAM device of claim 7 , further comprising first and second conductive contacts that are spaced apart from each other in the horizontal direction and are spaced apart from the horizontal portion of the conductive layer in the vertical direction,

wherein the first protruding portion electrically connects the first conductive contact to the horizontal portion, and the second protruding portion electrically connects the second conductive contact to the horizontal portion.

14. The MRAM device of claim 13 , wherein the MTJ comprises a first MTJ, and the conductive layer comprises a first conductive layer, and

wherein the MRAM device further comprises:

a second MTJ spaced apart from the first MTJ in the horizontal direction; and

a second conductive layer adjacent to the second MTJ,

wherein the first conductive contact is electrically connected to the first conductive layer and the second conductive layer.

15. A magnetic random access memory (MRAM) device comprising:

a magnetic tunnel junction (MTJ) including a free layer and a pinned layer sequentially stacked in a vertical direction; and

a conductive layer adjacent to the free layer of the MTJ, wherein the conductive layer comprises:

a horizontal portion comprising a first surface facing the MTJ and a second surface opposite the first surface; and

first and second protruding portions that protrude away from the second surface of the horizontal portion and are spaced apart from each other in a horizontal direction that is perpendicular to the vertical direction,

wherein the MTJ overlaps an interface between the horizontal portion and the first protruding portion.

16. The MRAM device of claim 15 , wherein the MTJ overlaps an entirety of the interface between the horizontal portion and the first protruding portion.

17. The MRAM device of claim 15 , wherein a side of the free layer and a side of the horizontal portion are coplanar.

18. The MRAM device of claim 17 , wherein the first protruding portion comprises a first side facing the second protruding portion and a second side opposite the first side of the first protruding portion, and

wherein the second side of the first protruding portion is recessed toward the second protruding portion with respect to the side of the horizontal portion in a plan view.

19. The MRAM device of claim 15 , wherein the horizontal portion is configured to exert spin-orbit torque to the free layer when current flows in the horizontal direction from the first protruding portion to the second protruding portion.

20. The MRAM device of claim 15 , wherein the MTJ overlaps an interface between the horizontal portion of the conductive layer and the second protruding portion.