MTJ stack etch using IBE to achieve vertical profile
Methods for MTJ patterning for a MTJ device are provided. For example, a method includes (a) providing an MTJ device comprising a substrate comprising a plurality of bottom electrodes, a MTJ layer disposed on the substrate, and a plurality of pillars disposed on the MTJ layer and over the plurality of bottom electrodes, wherein the plurality of pillars comprise a metal layer and a hard mask layer disposed on the metal layer, (b) conducting a first ion beam etching of the MTJ device; (c) rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about an axis perpendicular to a top surface of the MTJ device from a starting position; (d) conducting a second ion beam etching of the MTJ device; and (e) repeating steps (c) and (d).
1. A method for MTJ patterning for a MTJ device, comprising:
(a) providing an MTJ device comprising a substrate comprising a plurality of bottom electrodes, a MTJ layer disposed on the substrate, and a plurality of pillars disposed on the MTJ layer and over the plurality of bottom electrodes, wherein the plurality of pillars comprise a metal layer and a hard mask layer disposed on the metal layer,
(b) conducting a first ion beam etching of the MTJ device to remove a portion of a horizontal surface of the MTJ layer;
(c) stopping the first ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about an axis perpendicular to a top surface of the MTJ device from a starting position;
(d) stopping rotating the MTJ device and conducting a second ion beam etching of the MTJ device to further remove the portion of the horizontal surface of the MTJ layer; and
(e) repeating steps (c) and (d) until the horizontal surface of the MTJ layer is substantially removed.
2. The method of claim 1 , wherein the MTJ layer comprises a plurality of magnetic thin films with a tunnel barrier.
3. The method of claim 1 , wherein the MTJ layer comprises a bottom electrode layer disposed on a bit line contact metal, a seed layer, a bottom fixed magnetic layer, a thin dielectric tunnel barrier and a free top magnetic layer in a stacked configuration.
4. The method of claim 3 , wherein the metal layer comprises one of tantalum nitride and titanium nitride.
5. The method of claim 1 , wherein the hard mask comprises one of silicon nitride and silicon dioxide.
6. The method of claim 1 , wherein the first ion beam etching is carried out at an etch rate of from about 0.1 to about 10 A/s.
7. The method of claim 1 , wherein the second ion beam etching is carried out at an etch rate of from about 0.1 to about 1 OA/s.
8. The method of claim 1 , wherein the first and second ion beam etchings are independently carried out at a tilt angle relative to the top surface of the MTJ device of from about 10 to about 80 degrees.
9. The method of claim 1 , wherein the repeating step (e) comprises:
(e) stopping the second ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about the axis perpendicular to the top surface of the MTJ device from the position in step (c); and
(f) stopping rotating the MTJ device and conducting a third ion beam etching of the MTJ device to further remove the portion of the horizontal surface of the MTJ layer.
10. The method of claim 9 , wherein the third ion beam etching is carried out at a tilt angle relative to the top surface of the MTJ device of from about 10 to about 80 degrees, and an etch rate of from about 0.1 to about 10 A/s.
11. The method of claim 9 , further comprising:
(g) stopping the third ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about the axis perpendicular to the top surface of the MTJ device from the position in step (e); and
(h) stopping rotating the MTJ device and conducting a fourth ion beam etching of the MTJ device to further remove the portion of the horizontal surface of the MTJ layer.
12. The method of claim 11 , wherein the fourth ion beam etching is carried out at a tilt angle relative to the top surface of the MTJ device of from about 10 to about 80 degrees, and an etch rate of from about 0.1 to about 10 A/s.
13. The method of claim 11 , further comprising:
(i) stopping the fourth ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about the axis perpendicular to the top surface of the MTJ device from the position in step (g); and
(j) stopping rotating the MTJ device and conducting a fifth ion beam etching of the MTJ device to further remove the portion of the horizontal surface of the MTJ layer.
14. The method of claim 13 , wherein the fifth ion beam etching is carried out at a tilt angle relative to the top surface of the MTJ device of from about 10 to about 80 degrees, and an etch rate of from about 0.1 to about 10 A/s.
15. A method for MTJ patterning for a MTJ device, comprising:
(a) forming an MTJ device comprising a bottom electrode substrate, a MTJ layer disposed on the bottom electrode, and a plurality of pillars disposed on the MTJ layer, wherein the MTJ layer comprises a plurality of magnetic thin films with a tunnel barrier and further wherein the plurality of pillars comprise a metal layer and a hard mask layer disposed on the metal layer;
(b) conducting a first ion beam etching of the MTJ device at a tilt angle relative to a top surface of the MTJ device of from about 10 to about 80 degrees to remove a portion of a horizontal surface of the MTJ layer;
(c) stopping the first ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about an axis perpendicular to a top surface of the MTJ device from a starting position;
(d) stopping rotating the MTJ device and conducting a second ion beam etching of the MTJ device at a tilt angle relative to a top surface of the MTJ device of from about 10 to about 80 degrees to further remove the portion of the horizontal surface of the MTJ layer; and
(e) repeating steps (c) and (d) until the horizontal surface of the MTJ layer is substantially removed.
16. The method of claim 15 , wherein the metal layer comprises one of tantalum nitride and titanium nitride.
17. The method of claim 16 , wherein the hard mask comprises one of silicon nitride and silicon dioxide.
18. The method of claim 15 , wherein the repeating step (e) comprises:
(e) stopping the second ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about the axis perpendicular to the top surface of the MTJ device from the position in step (c); and
(f) stopping rotating the MTJ device and conducting a third ion beam etching of the MTJ device at a tilt angle relative to a top surface of the MTJ device of from about 10 to about 80 degrees to further remove the portion of the horizontal surface of the MTJ layer.
19. The method of claim 18 , further comprising:
(g) stopping the third ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about the axis perpendicular to the top surface of the MTJ device from the position in step (e); and
(h) stopping rotating the MTJ device and conducting a fourth ion beam etching of the MTJ device at a tilt angle relative to a top surface of the MTJ device of from about 10 to about 80 degrees to further remove the portion of the horizontal surface of the MTJ layer.
20. The method of claim 19 , further comprising:
(i) stopping the fourth ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about the axis perpendicular to the top surface of the MTJ device from the position in step (g); and
(j) stopping rotating the MTJ device and conducting a fifth ion beam etching of the MTJ device at a tilt angle relative to a top surface of the MTJ device of from about 10 to about 80 degrees to further remove the portion of the horizontal surface of the MTJ layer.