IP Library Granted Patent US 10,698,460
Granted Patent B2
US 10,698,460 · App. 15/659,538 · Granted Jun 30, 2020

Advanced thermal control for SSD

Inventor: Zhan Ping (San Jose, CA)
Assignee: Samsung Electronics Co., Ltd.
G06F1/206G11B33/142H05K7/20209H05K7/20836
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Quick Facts
Patent No.
US 10,698,460
App. No.
15/659,538
Granted
Jun 30, 2020
Kind
B2
Abstract

A storage system with temperature control. The system includes a plurality of storage devices such as solid state drives, a system controller such as a baseboard management controller, and one or more cooling fans. Each storage devices includes a controller configured to estimate the heat load in the storage device and/or an effective temperature, resulting from operations performed in the storage device. The system controller employs active disturbance rejection control to adjust the fan speed based on the estimated heat loads, the estimated temperatures, and/or the sensed internal temperatures, of the storage devices.

Claims (50)

1. A storage system, comprising:

a plurality of storage devices;

a cooling fan; and

a system management processing circuit,

the system management processing circuit being configured to:

measure a workload of one or more of the storage devices, wherein the one or more storage devices have a temperature different from the workload, and

adjust a speed of the cooling fan based on the measured workload,

wherein the measuring of the workload comprises calculating an effective workload based, at least in part, on one or more of a rate of performing flash memory read operations, a rate of performing flash memory write operations, or a rate of performing flash memory erase operations, and

wherein each of the rates is based at least in part on a number of operations per unit time.

2. The storage system of claim 1 , wherein the system management processing circuit is configured to adjust the speed of the cooling fan utilizing active disturbance rejection control.

3. The storage system of claim 1 , wherein one or more of the storage devices is a solid state drive.

4. The storage system of claim 1 , wherein one or more of the storage devices includes a storage device processing circuit, configured with the system management processing circuit to adjust the speed of the cooling fan based on the measured workload.

5. The storage system of claim 4 , wherein the storage device processing circuit of a first storage device of the plurality of storage devices is configured to estimate a power dissipated in the first storage device.

6. The storage system of claim 5 , wherein the storage device processing circuit of the first storage device is configured to estimate an effective temperature of the first storage device.

7. The storage system of claim 6 , wherein the storage device processing circuit is configured to implement an artificial neural network, to receive information comprising a rate at which nonvolatile memory operations are performed by the storage device, and to estimate the effective temperature of the first storage device.

8. The storage system of claim 7 , wherein the artificial neural network comprises an input layer, a hidden layer, and an output layer.

9. The storage system of claim 8 , wherein the input layer includes at least three nodes and at most four nodes.

10. The storage system of claim 8 , wherein the hidden layer includes a first hidden sub-layer and a second hidden sub-layer.

11. The storage system of claim 10 , wherein the first hidden sub-layer includes at least four nodes and at most five nodes.

12. The storage system of claim 10 , wherein the second hidden sub-layer includes at least four nodes and at most five nodes.

13. The storage system of claim 8 , wherein the output layer includes a first output node and a second output node.

14. The storage system of claim 13 , wherein an output of the first output node is an estimated heat load and an output of the second output node is an estimated effective temperature.

15. The storage system of claim 7 , wherein the system management processing circuit is configured to receive a plurality of estimated effective temperatures, including the estimated effective temperature in the first storage device, and to generate, based on the plurality of estimated effective temperatures, a plurality of fan speed commands.

16. The storage system of claim 15 , wherein the system management processing circuit is configured to generate the plurality of fan speed commands utilizing active disturbance rejection control.

17. A method for operating a storage system, the storage system comprising:

a plurality of storage devices;

a cooling fan; and

a system management processing circuit,

the method comprising:

measuring a workload of one or more of the storage devices, and

adjusting a speed of the cooling fan based on the measured workload,

wherein the measuring of the workload comprises calculating an effective workload based, at least in part, on a rate of performing flash memory read operations, or a rate of performing flash memory write operations, or a rate of performing flash memory erase operations,

wherein the measuring of the workload does not consist of measuring a temperature, and

wherein each of the rates is based at least in part on a number of operations per unit time.

18. The method of claim 17 , wherein the adjusting of the speed of the cooling fan comprises:

estimating, utilizing an artificial neural network, a heat load corresponding to the measured workload;

estimating an effective temperature of a storage device of the plurality of storage devices; and

generating a fan speed command utilizing active disturbance rejection control.

19. The method of claim 18 , the method further comprising training the neural network when the storage system is off line.

20. A storage system, comprising:

a plurality of storage devices;

a cooling fan; and

processing means,

the processing means being configured to:

measure a workload of one or more of the storage devices, and

adjust a speed of the cooling fan based on the measured workload,

wherein the measuring of the workload comprises calculating an effective workload based, at least in part, on a rate of performing flash memory read operations, or a rate of performing flash memory write operations, or a rate of performing flash memory erase operations,

wherein the measuring of the workload does not consist of measuring a temperature, and

wherein each of the rates is based at least in part on a number of operations per unit time.

21. The storage system of claim 1 , wherein the measuring of the workload does not consist of measuring a temperature.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2017
From: PING, ZHAN
To: SAMSUNG ELECTRONICS CO., LTD
Reel/Frame 043104/0792 →
Continuity (2)
Provisional Application 62470828 · Mar 13, 2017
Related Publication 20180260007A1 · Sep 13, 2018
Cited By (2)
US 12,505,009 US 12,538,449