IP Library Granted Patent US 10,731,237
Granted Patent B1
US 10,731,237 · App. 15/713,821 · Granted Aug 4, 2020

Ultra high temperature ceramic coatings and ceramic matrix composite systems

Inventors: Dongming Zhu (Westlake, OH); Janet B. Hurst (Columbia Station, OH)
Assignee: United States of America as Represented by the Administrator of National Aeronautics and Space Administration
C22C29/04C22C16/00C22C27/00C23C16/36C22C47/00C22C2202/00
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,731,237
App. No.
15/713,821
Granted
Aug 4, 2020
Kind
B1
Abstract

Advanced ultra high temperature ceramic (UHTC) systems with higher temperature capabilities, particularly an integrated ceramic coating and ceramic matrix composite (ICC-CMC). Also disclosed are coating and/or ceramic matrix composites and architecture arrangements to achieve ultra-high temperature and heat flux capability, resistance to oxidation, combustion, and a wide range of spectrum wavelength and charged particle radiation environments.

Claims (14)

1. An ultra-high temperature material comprising:

a first layer comprising an alloy, wherein the alloy is a hafnium-carbonitride alloy, a zirconium-carbonitride alloy, or a combination of a hafnium-nitrogen-carbon alloy and a zirconium-nitrogen-carbon alloy, wherein, in the alloy, the nitrogen is present in the alloy an amount in a range of 2 at % to 40 at %, carbon is present in amount in a range of 30 at % to 60 at %, with the balance being either hafnium or zirconium;

a second layer disposed directly on the first layer, the second layer comprising a compound selected from Hf(RESi), Hf(RESi)CN, Zr(RESi), Zr(RESi)CN, TaRESiCN, or a combination of two or more thereof, wherein the material is disposed on a substrate, wherein the first and second layers extend parallel to one another in a direction substantially parallel to the substrate, wherein the second layer has a composition that is different from the first layer; and

wherein the alloy is doped with a silicide selected from a rare earth (RE) silicide, a rare earth (RE) silicide doped with zirconium, hafnium, aluminum, or a combination thereof; a rare earth (RE) doped refractory transition metal silicide, or a rare earth (RE) and aluminum doped palladium, iridium and platinum silicide; or a combination of two or more thereof.

2. The ultra-high temperature material of claim 1 , wherein the first layer alloy is selected from HfCN, HfSiCN, HfSiRECN, HfSiYCN, ZrCN, ZrSiCN, ZRSiRECN, ZRSiYCN, or a combination of two or more thereof.

3. The ultra-high temperature material of claim 1 , wherein, the silicide is the rare earth silicide doped with zirconium, hafnium, aluminum, or a combination thereof, wherein the rare earth silicide is selected from a ytterbium silicide, a yttrium silicide, a gadolinium silicide, an erbium silicide, or a combination of two or more thereof.

4. The ultra-high temperature material of claim 1 , wherein the silicide is the rare earth doped refractory transition metal silicide, wherein the rare earth doped refractory transition metal silicide is selected from rare earth (RE) doped or alloyed zirconium silicides, hafnium silicides, tantalum silicides, titanium silicides, chromium silicides, iron silicides, molybdenum silicides, niobium silicides, aluminum silicides, or a combination of two or more thereof.

5. The ultra-high temperature material of claim 1 , wherein the alloy is doped with a rare earth (RE) doped or non-doped tantalum-, titanium-, chromium-, molybdenum-, niobium-, aluminum-silicon carbon, boron, nitride; Ti x (AlCrTa) y Si—CN, Ti x (AlCrTa) y Si—BN, Ti 2 CrTa(Si)—N, ZrTaSi—N, Ta 2 AlSi—CN, or a combination of two or more thereof.

6. The ultra-high temperature material of claim 1 , wherein the first layer comprises HfCN or ZrCN.

7. The ultra-high temperature material of claim 1 , wherein the substrate is a SiC/SiC or C/SiC CMCs or C/C substrate.

8. The ultra-high temperature material of claim 1 , further comprising nanoclusters of doped silicide or silicate interspersed among the first and second layers.

9. The ultra-high temperature material of claim 8 , wherein the nanoclusters comprise HfRESi(O), ZrRESi(O), Hf(RESi)B, Zr(RESi)B, or a combination of two or more thereof.

10. The ultra-high temperature material of claim 1 , wherein the material further comprises matrix grains comprising Hf(B)CN, TaHf(B)CN, HfTi(B)CN, ZrTi(B)CN, or a combination of two or more thereof.

11. The ultra-high temperature material of claim 1 , wherein the first layer alloy is HfSiRECN.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2017
From: ZHU, DONGMING, MR.; HURST, JANET B., MS.
To: UNITED STATES OF AMERICA GOVERNMENT ADMINISTRATOR OF NASA
Reel/Frame 043678/0186 →
Continuity (1)
Provisional Application 62398731 · Sep 23, 2016
Cited By (2)
US 12,312,281 US 12,415,764