Phase change memory with a patterning scheme for tantalum nitride and silicon nitride layers

1. A method of forming a phase change memory device, comprising:

depositing an electrode layer on a phase change material core;

forming a sacrificial layer on the electrode layer;

depositing a planarization layer on the sacrificial layer;

depositing an anti-reflective coating on the planarization layer;

forming a template on the anti-reflective coating;

removing a portion of the anti-reflective coating to form an anti-reflective coating section, a portion of the planarization layer to form a planarization layer section, and a portion of the sacrificial layer to form a reduced height sacrificial layer and a sacrificial layer section beneath the planarization layer section;

removing the anti-reflective coating section and planarization layer section to expose the sacrificial layer section; and

removing the reduced height sacrificial layer and a portion of the electrode layer to form a top electrode on the phase change material core and a sacrificial layer plate on the top electrode.

2. The method of claim 1 , further comprising forming an amorphization layer on the phase change material core prior to depositing the electrode layer on the phase change material core.

3. The method of claim 2 , further comprising removing a portion of the amorphization layer to form an amorphization plate between the phase change material core and the top electrode.

4. The method of claim 3 , further comprising removing the sacrificial layer plate.

5. The method of claim 4 , further comprising forming a second interlayer dielectric (ILD) layer on the top electrode.

6. The method of claim 5 , wherein the anti-reflective coating section and planarization layer section are removed using a chemical strip.

7. The method of claim 6 , wherein the electrode layer is tantalum nitride (TaN).

8. The method of claim 7 , wherein the sacrificial layer is silicon nitride (SiN).

9. The method of claim 8 , wherein the amorphization layer is the same transition metal as included in the electrode layer.

10. A method of forming a phase change memory device, comprising:

forming a bottom electrode on a substrate;

forming a phase change material core on the bottom electrode;

depositing an electrode layer on the phase change material core;

forming a sacrificial layer on the electrode layer;

depositing a planarization layer on the sacrificial layer;

depositing an anti-reflective coating on the planarization layer;

forming a template on the anti-reflective coating;

removing a portion of the anti-reflective coating to form an anti-reflective coating section, a portion of the planarization layer to form a planarization layer section, and a portion of the sacrificial layer to form a reduced height sacrificial layer and a sacrificial layer section beneath the planarization layer section;

removing the anti-reflective coating section and planarization layer section to expose the sacrificial layer section; and

removing the reduced height sacrificial layer and a portion of the electrode layer to form a top electrode on the phase change material core and a sacrificial layer plate on the top electrode.

11. The method of claim 10 , wherein the electrode layer is a transition metal nitride.

12. The method of claim 11 , wherein the electrode layer is tantalum nitride (TaN).

13. The method of claim 11 , wherein the sacrificial layer is silicon nitride (SiN).

14. The method of claim 13 , wherein the planarization layer is a photo-sensitive organic polymer selected from the group consisting of polyacrylate resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylenether resin, polyphenylenesulfide resin, and a combination thereof.

15. The method of claim 13 , wherein the sacrificial layer has a thickness in a range of about 50 nm to about 200 nm, and the electrode layer has a thickness in a range of about 10 nm to about 40 nm.

16. A method of forming a phase change memory device, comprising:

forming a bottom electrode on a substrate;

forming a phase change material core on the bottom electrode;

depositing a tantalum nitride electrode layer on the phase change material core;

forming a silicon nitride sacrificial layer on the electrode layer;

depositing a planarization layer on the sacrificial layer;

depositing an anti-reflective coating on the planarization layer;

forming a template on the anti-reflective coating;

removing a portion of the anti-reflective coating to form an anti-reflective coating section, a portion of the planarization layer to form a planarization layer section, and a portion of the sacrificial layer to form a reduced height sacrificial layer and a sacrificial layer section beneath the planarization layer section;

removing the anti-reflective coating section and planarization layer section to expose the sacrificial layer section; and

removing the reduced height sacrificial layer and a portion of the electrode layer to form a top electrode on the phase change material core and a sacrificial layer plate on the top electrode.

17. The method of claim 16 , wherein the portion of the electrode layer is removed using a reactive ion etch (RIE).

18. The method of claim 17 , wherein the anti-reflective coating section and planarization layer section are removed using a chemical strip.

19. The method of claim 17 , wherein the sacrificial layer section has a thickness in a range of about 50 nm to about 100 nm.

20. The method of claim 19 , further comprising removing the sacrificial layer plate.