Light receiving element and electronic apparatus
There is provided a light receiving element including; an on-chip lens; a wiring layer; and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a first voltage applying unit to which a first voltage is applied, a second voltage applying unit to which a second voltage different from the first voltage is applied, a first charge detection unit disposed in a vicinity of the first voltage applying unit, and a second charge detection unit disposed in a vicinity of the second voltage applying unit, and the wiring layer includes a reflection suppressing structure that suppresses reflection of light in a plane region corresponding to the first charge detection unit and the second charge detection unit.
1. A light receiving element comprising:
an on-chip lens;
a wiring layer; and
a semiconductor layer disposed between the on-chip lens and the wiring layer,
wherein the semiconductor layer includes:
a first voltage applying unit to which a first voltage is applied,
a second voltage applying unit to which a second voltage different from the first voltage is applied,
a first charge detection unit disposed in a vicinity of the first voltage applying unit, and
a second charge detection unit disposed in a vicinity of the second voltage applying unit, and
wherein the wiring layer includes:
a reflection suppressing structure that suppresses reflection of light in a plane region corresponding to the first charge detection unit and the second charge detection unit; and
at least a wiring of one layer including a first voltage applying wiring for supplying the first voltage, a second voltage applying wiring for supplying the second voltage, and a reflection member, wherein the reflection member is not formed in the plane region corresponding to the first charge detection unit and the second charge detection unit.
2. The light receiving element according to claim 1 , wherein the reflection suppressing structure is a film including polysilicon.
3. The light receiving element according to claim 1 , wherein the reflection suppressing structure is a film including a nitride film.
4. The light receiving element according to claim 1 , wherein the reflection suppressing structure is a structure in which a first reflection suppressing film including polysilicon and a second reflection suppressing film including a nitride film are stacked in a stacking direction of the wiring layer.
5. The light receiving element according to claim 1 , wherein the wiring of one layer including the first voltage applying wiring, the second voltage applying wiring, and the reflection member is a wiring closest to the semiconductor layer among wirings of a plurality of layers.
6. The light receiving element according to claim 1 , wherein the reflection member is a metal film.
7. The light receiving element according to claim 1 , wherein the semiconductor layer further includes a first buried insulating film between the first voltage applying unit and the first charge detection unit and between the second voltage applying unit and the second charge detection unit.
8. The light receiving element according to claim 7 , further comprising:
a light shielding film inside the first buried insulating film.
9. The light receiving element according to claim 7 , wherein the semiconductor layer further includes a second buried insulating film between the first charge detection unit and the second charge detection unit.
10. The light receiving element according to claim 9 , further comprising:
a light shielding film inside the second buried insulating film between the first charge detection unit and the second charge detection unit.