Organic light emitting diode
According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.
1. An organic light emitting diode comprising:
a first electrode;
a second electrode overlapping the first electrode;
an emission layer between the first electrode and the second electrode;
an electron injection layer between the emission layer and the second electrode;
an electron injection delay layer between the emission layer and the electron injection layer, wherein the electron injection delay layer comprises at least one selected from the group consisting of LiF, NaF, KF, RbF, CsF, MgF 2 , CaF 2 , SrF 2 , BaF 2 , Liq, and Alq 3 ; and
an electron transport layer comprising an organic material, wherein the electron transport layer is between the emission layer and the electron injection delay layer,
wherein the electron transport layer is in contact with the emission layer and in contact with the electron injection delay layer, and
wherein the electron injection layer comprises a metal halide, and
the electron injection delay layer has a thickness from equal to or greater than 20 Å to equal to or less than 140 Å.
2. The organic light emitting diode of claim 1 , wherein
the electron injection delay layer comprises a dielectric material having a band gap of 4 eV or more.
3. The organic light emitting diode of claim 1 , wherein the electron injection layer comprises a reaction product of a first material comprising a metal and a second material comprising the metal halide.
4. The organic light emitting diode of claim 3 , wherein
a valence electron number of the metal comprised in the first material is equal to or greater than a valence electron number of the metal comprised in the second material.
5. The organic light emitting diode of claim 4 , wherein
the electron injection layer comprises a first compound comprising the metal of the first material and the metal halide of the second material and a second compound comprising the metal of the first material and the metal halide of the second material.
6. The organic light emitting diode of claim 5 , wherein
the metal of the first material comprised in the first compound is a bivalent element or a trivalent element.
7. The organic light emitting diode of claim 5 , wherein
the second compound has a perovskite structure.
8. The organic light emitting diode of claim 3 , wherein
the first material is a lanthanide metal.
9. The organic light emitting diode of claim 3 , wherein
the second material is a metal iodide.
10. The organic light emitting diode of claim 9 , wherein
the metal iodide comprises one selected from the group consisting of Lil, Nal, KI, RbI, CsI, MgI 2 , CaI 2 , SrI 2 , and BaI 2 .
11. The organic light emitting diode of claim 3 , wherein
in the electron injection layer, the first material is distributed with a same volume as the second material or the first material is distributed with greater volume than the second material.
12. The organic light emitting diode of claim 3 ,
wherein the first material consists of the metal and the second material consists of the metal halide.
13. The organic light emitting diode of claim 1 , wherein
the emission layer is to emit white light by combining a plurality of layers.
14. The organic light emitting diode of claim 13 , wherein
the plurality of layers comprises two light emission layers or three light emission layers.
15. The organic light emitting diode of claim 1 , wherein the electron injection layer is transparent.
16. An organic light emitting diode comprising:
a first electrode;
a second electrode overlapping the first electrode;
an emission layer between the first electrode and the second electrode;
an electron injection layer between the emission layer and the second electrode; and
an electron injection delay layer between the emission layer and the electron injection layer,
wherein the electron injection layer comprises a reaction product of a first material comprising a metal and a second material comprising a metal halide, and
the electron injection delay layer has a thickness from equal to or greater than 20 Å to equal to or less than 140 Å, and
wherein the electron injection layer includes a lower region where more of the first material than the second material is distributed and an upper region where more of the second material than the first material is distributed.
17. The organic light emitting diode of claim 16 , wherein
an amount of the first material increases in a direction from the second electrode toward the electron injection delay layer in the electron injection layer.
18. An organic light emitting diode comprising:
a first electrode;
a second electrode overlapping the first electrode;
an emission layer between the first electrode and the second electrode;
an electron injection layer between the emission layer and the second electrode;
an electron injection delay layer between the emission layer and the electron injection layer, and the electron injection delay layer being to lower an electron injection speed; and
an electron transport layer comprising an organic material and between the emission layer and the electron injection delay layer,
wherein the electron transport layer is in contact with the emission layer and in contact with the electron injection delay layer,
wherein the electron injection layer comprises a reaction product of a first material comprising a metal and a second material comprising a metal halide, and
a valence electron number of the metal comprised in the first material is equal to or greater than a valence electron number of the metal comprised in the second material.
19. The organic light emitting diode of claim 18 , wherein
the electron injection layer comprises a first compound comprising the metal of the first material and the metal halide of the second material and a second compound comprising the metal of the first material and the metal halide of the second material.
20. The organic light emitting diode of claim 19 , wherein
the metal of the first material comprised in the first compound is a bivalent element or a trivalent element.
21. The organic light emitting diode of claim 19 , wherein
the second compound has a perovskite structure.
22. The organic light emitting diode of claim 18 , wherein
the first material is a lanthanide metal.
23. The organic light emitting diode of claim 18 , wherein
the second material is a metal iodide.
24. The organic light emitting diode of claim 23 , wherein
the metal iodide comprises one selected from the group consisting of Lil, Nal, KI, RbI, CsI, MgI 2 , CaI 2 , SrI 2 , and BaI 2 .
25. The organic light emitting diode of claim 18 ,
wherein the electron injection delay layer has a thickness from equal to or greater than 20 Å to equal to or less than 140 Å.
26. The organic light emitting diode of claim 18 , wherein
the electron injection delay layer comprises at least one selected from the group consisting of LiF, NaF, KF, RbF, CsF, MgF 2 , CaF 2 , SrF 2 , BaF 2 , Liq, and Alq 3 .