Spin-based storage element
View Patent ↗A technique relates to a magnetic device. A configuration in a memory layer of the magnetic device is adjusted, the configuration affecting stochastic fluctuations in a free magnetic layer of a magnetic tunnel junction coupled to the memory layer. The stochastic fluctuations are used to define a random number according to the configuration in the memory layer.
1. A method of controlling a magnetic device, the method comprising:
adjusting a configuration in a memory layer of the magnetic device, the configuration affecting stochastic fluctuations of a magnetic moment in a free magnetic layer of a magnetic tunnel junction coupled to the memory layer, the magnetic tunnel junction comprising a reference magnetic layer having a fixed magnetic moment in a fixed magnetic direction; and
using the stochastic fluctuations to define a random number according to the configuration in the memory layer.
2. The method of claim 1 , wherein the magnetic device is operable under a superparamagnetic state and assumes a stochastic time-dependent state without requiring an external circuit to maintain the stochastic time-dependent state.
3. The method of claim 1 , wherein the configuration comprises analog storage of information, the configuration being encoded in a stochastic average of the stochastic fluctuations.
4. The method of claim 1 , wherein the stochastic fluctuations are read out as a digital bit stream.
5. The method of claim 1 , wherein the stochastic fluctuations comprise ones and zeros of a digital bit stream forming a stochastic digital bit stream of a Bernoulli sequence.
6. The method of claim 1 , wherein the magnetic tunnel junction comprises a tunnel barrier layer sandwiched by the reference magnetic layer and the free magnetic layer.
7. The method of claim 1 , wherein an effective magnetic field from the memory layer on the free magnetic layer of the magnetic tunnel junction can be changed by adjustments to the configuration of the memory layer.
8. The method of claim 1 , wherein:
the stochastic fluctuations comprise thermal fluctuations in time to define a fluctuating state of the magnetic moment in the free magnetic layer; and
a mean position of the stochastic fluctuations is influenced by the configuration of the memory layer.
9. The method of claim 1 , wherein the free magnetic layer of the magnetic tunnel junction comprises a magnetic element that is structured to operate in a superparamagnetic state.
10. The method of claim 1 , wherein the free magnetic layer of the magnetic tunnel junction is positioned to receive magnetic interactions from the memory layer.
11. A method for operating a controller, the method comprising:
causing, by the controller, a write operation to adjust a configuration of a memory layer of a magnetic device, the configuration affecting stochastic fluctuations of a magnetic moment in a free magnetic layer of a magnetic tunnel junction of the magnetic device, the magnetic tunnel junction comprising a reference magnetic layer having a fixed magnetic moment in a fixed magnetic direction; and
using, by the controller, statistical properties of the stochastic fluctuations in a time sequence to define a physical number according to the configuration in the memory layer.
12. The method of claim 11 further comprising determining a stochastic average of the stochastic fluctuations to be a multi-bit, substantially analog value encoded in the configuration.
13. The method of claim 11 , wherein the configuration comprises multi-bit, substantially analog values of information, the configuration being represented by an average of the stochastic fluctuations of a read-out.
14. The method of claim 11 , wherein the stochastic fluctuations define a digital bit stream.
15. The method of claim 11 , wherein the stochastic fluctuations comprise ones and zeros of a digital bit stream.
16. The method of claim 11 , wherein the magnetic tunnel junction comprises a tunnel barrier layer sandwiched by the reference magnetic layer and the free magnetic layer.
17. The method of claim 11 , wherein an effective magnetic field from the memory layer on the free magnetic layer of the magnetic tunnel junction can be changed by adjustments to the configuration of the memory layer.
18. The method of claim 11 , wherein:
the stochastic fluctuations comprise thermal fluctuations in time to define a fluctuating state of a magnetic moment in the free magnetic layer; and
a mean position of the stochastic fluctuations is influenced by the configuration of the memory layer.
19. The method of claim 11 , wherein the free magnetic layer of the magnetic tunnel junction comprises a magnetic element that is structured to operate in a superparamagnetic state.
20. The method of claim 11 , wherein the free magnetic layer of the magnetic tunnel junction is positioned to receive magnetic interactions from the memory layer.