Photodetection element including photoelectric conversion structure and avalanche structure
A photodetection element includes: a photoelectric conversion structure that contains a first material having an absorption coefficient higher than an absorption coefficient of monocrystalline silicon for light of a first wavelength, for which monocrystalline silicon exhibits absorption, and generates positive and negative charges by absorbing a photon; and an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure. The first material includes at least one selected from the group consisting of an organic semiconductor, a semiconductor-type carbon nanotube, and a semiconductor quantum dot.
1. A photodetection element comprising:
a first electrode;
a second electrode;
a photoelectric conversion structure that contains a first material and generates positive and negative charges by absorbing a photon; and
an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure, wherein:
the first material includes at least one selected from the group consisting of an organic semiconductor and a semiconductor-type carbon nanotube,
the avalanche structure includes:
a first heavily doped region of a first conductivity type,
a second heavily doped region of a second conductivity type, and
a lightly doped region that is arranged between the first heavily doped region and the second heavily doped region,
an impurity concentration of the lightly doped region is lower than an impurity concentration of the first heavily doped region and an impurity concentration of the second heavily doped region,
the first electrode is electrically connected to the first heavily doped region, and
the second electrode is electrically connected to the second heavily doped region.
2. The photodetection element according to claim 1 , wherein
the photoelectric conversion structure is in direct contact with the avalanche structure.
3. The photodetection element according to claim 1 , further comprising:
a charge transport layer that is arranged between the photoelectric conversion structure and the avalanche structure and allows at least one selected from the group consisting of the positive and negative charges generated in the photoelectric conversion structure to pass through.
4. The photodetection element according to claim 1 , wherein
an absorption edge of the first material is located on a side longer in wavelength than an absorption edge of monocrystalline silicon.
5. The photodetection element according to claim 1 , wherein
the photoelectric conversion structure further contains a second material deeper in lowest unoccupied molecular orbital level than the first material or a third material shallower in highest occupied molecular orbital level than the first material.
6. A photodetection element comprising:
a first electrode;
a second electrode;
a photoelectric conversion structure that contains a first material and generates positive and negative charges by absorbing a photon; and
an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure, wherein:
the first material includes at least one selected from the group consisting of an organic semiconductor and a semiconductor-type carbon nanotube, and
in a cross section perpendicular to a surface of the avalanche structure, neither of a first straight line and a second straight line that extend from a given point inside the avalanche structure crosses the photoelectric conversion structure, the first straight line being an imaginary straight line extending from the given point inside the avalanche structure to a point inside the first electrode that is closest to the given point, the second straight line being an imaginary straight line extending from the given point to a point inside the second electrode that is closest to the given point.
7. The photodetection element according to claim 6 , further comprising:
a third electrode that is located on an opposite side of the photoelectric conversion structure from the avalanche structure; and
a reset circuit that supplies a reset voltage that diselectrifies the photoelectric conversion structure to at least one selected from the group consisting of the first electrode, the second electrode, and the third electrode.
8. The photodetection element according to claim 7 , further comprising:
a first charge transport layer that is arranged between the photoelectric conversion structure and the avalanche structure and selectively allows one of the positive and negative charges generated in the photoelectric conversion structure to pass through; and
a second charge transport layer that is located between the photoelectric conversion structure and the third electrode and selectively allows the other of the positive and negative charges generated in the photoelectric conversion structure to pass through, wherein
the reset circuit is connected to the third electrode.
9. A photodetection element comprising:
a first electrode;
a second electrode;
a dielectric region;
a photoelectric conversion structure that contains a first material and generates positive and negative charges by absorbing a photon; and
an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure, wherein:
the first material includes at least one selected from the group consisting of an organic semiconductor and a semiconductor-type carbon nanotube,
in a cross section perpendicular to a surface of the avalanche structure, at least one straight line selected from the group consisting of a first straight line and a second straight line that extend from a given point inside the avalanche structure crosses the photoelectric conversion structure, the first straight line being an imaginary straight line extending from the given point inside the avalanche structure to a point inside the first electrode that is closest to the given point, the second straight line being an imaginary straight line extending from the given point to a point inside the second electrode that is closest to the given point, and
at least a part of the dielectric region is located on the at least one straight line.
10. The photodetection element according to claim 9 , further comprising:
a third electrode that is located on an opposite side of the photoelectric conversion structure from the avalanche structure; and
a reset circuit that supplies a reset voltage that diselectrifies the photoelectric conversion structure to at least one selected from the group consisting of the first electrode, the second electrode, and the third electrode.
11. The photodetection element according to claim 10 , further comprising:
a first charge transport layer that is arranged between the photoelectric conversion structure and the avalanche structure and selectively allows one of the positive and negative charges generated in the photoelectric conversion structure to pass through; and
a second charge transport layer that is located between the photoelectric conversion structure and the third electrode and selectively allows the other of the positive and negative charges generated in the photoelectric conversion structure to pass through, wherein
the reset circuit is connected to the third electrode.
12. A photodetection element comprising:
a first electrode;
a second electrode;
a photoelectric conversion structure that contains a first material and generates positive and negative charges by absorbing a photon; and
an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure, wherein:
the first material includes a semiconductor quantum dot including a core composed of a crystalline semiconductor,
the avalanche structure includes:
a first heavily doped region of a first conductivity type,
a second heavily doped region of a second conductivity type, and
a lightly doped region that is arranged between the first heavily doped region and the second heavily doped region,
an impurity concentration of the lightly doped region is lower than an impurity concentration of the first heavily doped region and an impurity concentration of the second heavily doped region,
the first electrode is electrically connected to the first heavily doped region, and
the second electrode is electrically connected to the second heavily doped region.
13. The photodetection element according to claim 12 , wherein
the semiconductor quantum dot includes at least one element selected from the group consisting of Pb, S, Se, Cd, and Te.
14. The photodetection element according to claim 13 , wherein
the semiconductor quantum dot includes at least one material selected from the group consisting of PbS, PbSe, CdSe, and CdTe.
15. A photodetection element comprising:
a first electrode;
a second electrode;
a photoelectric conversion structure that contains a first material and generates positive and negative charges by absorbing a photon; and
an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure, wherein:
the first material includes a semiconductor quantum dot including a core composed of a crystalline semiconductor,
in a cross section perpendicular to a surface of the avalanche structure, neither of a first straight line and a second straight line that extend from a given point inside the avalanche structure crosses the photoelectric conversion structure, the first straight line being an imaginary straight line extending from the given point inside the avalanche structure to a point inside the first electrode that is closest to the given point, the second straight line being an imaginary straight line extending from the given point to a point inside the second electrode that is closest to the given point.
16. A photodetection element comprising:
a first electrode;
a second electrode;
a dielectric region;
a photoelectric conversion structure that contains a first material and generates positive and negative charges by absorbing a photon; and
an avalanche structure that includes a monocrystalline silicon layer, in which avalanche multiplication occurs as a result of injection of at least one selected from the group consisting of the positive and negative charges from the photoelectric conversion structure, wherein:
the first material includes a semiconductor quantum dot including a core composed of a crystalline semiconductor,
in a cross section perpendicular to a surface of the avalanche structure, at least one straight line selected from the group consisting of a first straight line and a second straight line that extend from a given point inside the avalanche structure crosses the photoelectric conversion structure, the first straight line being an imaginary straight line extending from the given point inside the avalanche structure to a point inside the first electrode that is closest to the given point, the second straight line being an imaginary straight line extending from the given point to a point inside the second electrode that is closest to the given point, and
at least a part of the dielectric region is located on the at least one straight line.