Granted Patent B1

US 10,790,818 · App. 16/585,676 · Granted Sep 29, 2020

Inventor: Wolfgang Frank (Augsburg, DE)

Assignee: Infineon Technologies Austria AG

H03K17/687H03K17/06H03K17/161

Abstract

Claims (96)

1. A gate driver circuit, comprising:

a first power supply rail configured to provide a first fixed supply voltage;

a second power supply rail configured to provide a second fixed supply voltage;

a transistor comprising a gate terminal having a gate voltage;

a gate driver integrated circuit (IC) supplied with the first fixed supply voltage and the second fixed supply voltage, the gate driver IC comprising an output terminal coupled to the gate terminal of the transistor and configured to provide a gate drive voltage at the output terminal in order to drive the transistor between switching states; and

a gate resistor coupled between the output terminal of the gate driver IC and the gate terminal of the transistor, wherein the gate resistor defines a gate current based on the gate drive voltage and the gate voltage,

wherein the gate driver IC further comprises:

a first voltage converter configured to receive the first fixed supply voltage and modulate an amplitude of the first fixed supply voltage to generate a first modulated supply voltage; and

a first switch configured to selectively couple the first fixed supply voltage and the first modulated supply voltage to the output terminal of the gate driver IC in order to regulate the gate drive voltage,

wherein the first switch is configured to couple the first modulated supply voltage to the gate terminal of the transistor during a first switching event of the transistor during which the transistor transitions from a first state to a second state, and

wherein the first switch is configured to couple the first fixed supply voltage to the gate terminal of the transistor during the second state of the transistor.

2. The gate driver circuit of claim 1 , wherein the first switch is configured to selectively couple the first fixed supply voltage and the first modulated supply voltage to the output terminal of the gate driver IC in order to regulate the gate current.

3. The gate driver circuit of claim 1 , wherein the gate driver IC further comprises:

a controller configured to control the first switch such that the first switch is coupled to the first modulated supply voltage during a transient interval of the gate voltage during the first switching event of the transistor, and control the first switch such that the first switch is coupled to the first fixed supply voltage during a first static state of the gate voltage, the first static state being contiguous to the transient interval.

4. The gate driver circuit of claim 3 , wherein the controller is configured to control the first switch such that the first switch is coupled to the first modulated supply voltage during a Miller phase of the transient interval of the gate voltage during the first switching event.

5. The gate driver circuit of claim 3 , wherein:

the controller is configured to receive a PWM control signal and drive the transistor between the switching states based on the PWM control signal, and

the controller is configured to detect a pulse edge of the PWM control signal and control the first switch such that the first switch is coupled to the first modulated supply voltage in response to detecting the pulse edge.

6. The gate driver circuit of claim 5 , wherein:

the controller comprises a timer, and

the controller is configured to start the timer in response to detecting the pulse edge and control the first switch such that the first switch is coupled to the first fixed supply voltage in response to a predetermined time interval lapsing at the timer.

7. The gate driver circuit of claim 5 , wherein:

the controller is coupled to the gate terminal of the transistor and is configured to monitor the gate voltage and compare the monitored gate voltage to a threshold voltage value, and

the controller is configured to control the first switch such that the first switch is coupled to the first fixed supply voltage in response to the monitored gate voltage exceeding the threshold voltage value.

8. The gate driver circuit of claim 7 , wherein the threshold voltage value is the first fixed supply voltage.

9. The gate driver circuit of claim 7 , wherein the threshold voltage value has a magnitude less than a magnitude of the first fixed supply voltage.

10. The gate driver circuit of claim 3 , wherein:

the first fixed supply voltage is a positive fixed supply voltage and the first modulated supply voltage is a modulated positive supply voltage, and

the first switching event is a turn-on switching event of the transistor.

11. The gate driver circuit of claim 3 , wherein:

the first fixed supply voltage is a negative fixed supply voltage and the first modulated supply voltage is a modulated negative supply voltage, and

the first switching event is a turn-off switching event of the transistor.

12. The gate driver circuit of claim 1 , wherein the first voltage converter is configured to receive a slew rate control (SRC) control signal from an external controller, and generate the first modulated supply voltage based on voltage amplitude information provided by the SRC control signal.

13. The gate driver circuit of claim 12 , further comprising:

a sensor configured to measure a physical quality of the gate driver circuit and generate a measurement signal,

wherein the first voltage converter is configured to receive the measurement signal from the sensor and generate the first modulated supply voltage based on the voltage amplitude information provided by the SRC control signal and the measurement signal.

14. The gate driver circuit of claim 13 , wherein the sensor is one of a temperature sensor configured to measure a temperature associated with the transistor, a voltage sensor configured to measure a load voltage corresponding to a load coupled to the transistor, or a current sensor configured to measure a load current corresponding to the load.

15. The gate driver circuit of claim 12 , further comprising:

a sensor configured to measure a physical quality of the gate driver circuit and generate a measurement signal; and

an external controller configured to receive the measurement signal from the sensor, generate the voltage amplitude information based on the measurement signal, and transmit the SRC control signal, including the voltage amplitude information, to the first voltage converter.

16. The gate driver circuit of claim 1 , wherein the transistor is a high-side transistor configured to drive a load current, wherein the first state is an off state and the second state is an on state.

17. The gate driver circuit of claim 1 , wherein the transistor is a low-side transistor configured to drive a load current, wherein the first state is an on state and the second state is an off state.

18. The gate driver circuit of claim 1 , wherein:

the gate driver IC further comprises a supply transistor coupled to and between the first switch and the output terminal along a first current path of the gate current, and

while the supply transistor is turned on, the first switch is configured to couple the first modulated supply voltage to the supply transistor during a first time interval and couple the first fixed supply voltage to the supply transistor during a second time interval.

19. A gate driver circuit, comprising:

a first power supply rail configured to provide a first fixed supply voltage;

a second power supply rail configured to provide a second fixed supply voltage;

a transistor comprising a gate terminal having a gate voltage;

a gate driver integrated circuit (IC) supplied with the first fixed supply voltage and the second fixed supply voltage, the gate driver IC comprising an output terminal coupled to the gate terminal of the transistor and configured to provide a gate drive voltage at the output terminal in order to drive the transistor between switching states; and

a gate resistor coupled between the output terminal of the gate driver IC and the gate terminal of the transistor, wherein the gate resistor defines a gate current based on the gate drive voltage and the gate voltage,

wherein the gate driver IC further comprises:

a first voltage converter configured to receive the first fixed supply voltage and modulate an amplitude of the first fixed supply voltage to generate a first modulated supply voltage;

a first switch configured to selectively couple the first fixed supply voltage and the first modulated supply voltage to the output terminal of the gate driver IC in order to regulate the gate drive voltage;

a second voltage converter configured to receive the second fixed supply voltage and modulate an amplitude of the second fixed supply voltage to generate a second modulated supply voltage; and

a second switch configured to selectively couple the second fixed supply voltage and the second modulated supply voltage to the output terminal of the gate driver IC in order to regulate the gate drive voltage.

20. The gate driver circuit of claim 19 , wherein the gate driver IC further comprises:

a controller configured to:

control the first switch such that the first switch is coupled to the first modulated supply voltage during a first transient interval of the gate voltage during a first switching event of the transistor and coupled to the first fixed supply voltage during a first static state of the gate voltage, the first static state being contiguous to the first transient interval, and

control the second switch such that the second switch is coupled to the second modulated supply voltage during a second transient interval of the gate voltage during a second switching event of the transistor and coupled to the second fixed supply voltage during a second static state of the gate voltage, the second static state being contiguous to the second transient interval.

21. The gate driver circuit of claim 20 , wherein the controller is configured to:

control the first switch such that the first switch is coupled to the first modulated supply voltage during a first Miller phase of the first transient interval of the gate voltage during the first switching event, and

control the second switch such that the second switch is coupled to the second modulated supply voltage during a second Miller phase of the second transient interval of the gate voltage during the second switching event.

22. A method of driving a transistor between switching states in a power circuit, the method comprising:

supplying a gate drive voltage at an output terminal of a gate driver integrated circuit (IC) in order to drive the transistor between switching states;

supplying a first fixed supply voltage and a second fixed supply voltage to the gate driver IC;

converting, by the gate driver IC, the first fixed supply voltage into a first modulated supply voltage; and

selectively coupling, by the gate driver IC via a first switch, the first fixed supply voltage and the first modulated supply voltage to the output terminal of the gate driver IC in order to regulate the gate drive voltage,

wherein selectively coupling includes:

coupling the first modulated supply voltage to the gate terminal of the transistor during a first switching event of the transistor during which the transistor transitions from a first state to a second state, and

coupling the first fixed supply voltage to the gate terminal of the transistor during the second state of the transistor.

23. The method of claim 22 , further comprising:

controlling the first switch such that the first switch is coupled to the first modulated supply voltage during a transient interval of the gate voltage during the first switching event of the transistor; and

controlling the first switch such that the first switch is coupled to the first fixed supply voltage during a first static state of the gate voltage, the first static state being contiguous to the transient interval.

24. The method of claim 23 , further comprising:

controlling the first switch such that the first switch is coupled to the first modulated supply voltage during a Miller phase of the transient interval of the gate voltage during the first switching event.

25. The method of claim 24 , further comprising:

receiving, by the gate driver IC, a PWM control signal;

driving, by the gate driver IC, the transistor between the switching states based on the PWM control signal;

detecting, by the gate driver IC, a pulse edge of the PWM control signal; and

controlling, by the gate driver IC, the first switch such that the first switch is coupled to the first modulated supply voltage in response to detecting the pulse edge.

26. A method of driving a transistor between switching states in a power circuit, the method comprising:

supplying a gate drive voltage at an output terminal of a gate driver integrated circuit (IC) in order to drive the transistor between switching states;

supplying a first fixed supply voltage and a second fixed supply voltage to the gate driver IC;

converting, by the gate driver IC, the first fixed supply voltage into a first modulated supply voltage;

selectively coupling, by the gate driver IC via a first switch, the first fixed supply voltage and the first modulated supply voltage to the output terminal of the gate driver IC in order to regulate the gate drive voltage;

converting, by the gate driver IC, the second fixed supply voltage into a second modulated supply voltage; and

selectively coupling, by the gate driver IC via a second switch, the second fixed supply voltage and the second modulated supply voltage to the output terminal of the gate driver IC in order to regulate the gate drive voltage.

27. The method of claim 26 , further comprising:

controlling the first switch such that the first switch is coupled to the first modulated supply voltage during a first transient interval of the gate voltage during a first switching event of the transistor;

controlling the first switch such that the first switch is coupled to the first fixed supply voltage during a first static state of the gate voltage, the first static state being contiguous to the first transient interval;

controlling the second switch such that the second switch is coupled to the second modulated supply voltage during a second transient interval of the gate voltage during a second switching event of the transistor; and

controlling the second switch such that the second switch is coupled to the second fixed supply voltage during a second static state of the gate voltage, the second static state being contiguous to the second transient interval.

28. The method of claim 27 , further comprising:

controlling the first switch such that the first switch is coupled to the first modulated supply voltage during a first Miller phase of the first transient interval of the gate voltage during the first switching event; and

controlling the second switch such that the second switch is coupled to the second modulated supply voltage during a second Miller phase of the second transient interval of the gate voltage during the second switching event.

Assignments (1)

Cited By (8)

US 12,256,785 US 12,268,247 US 12,273,021 US 12,418,277 US 12,489,387 US 12,562,633 US 12,592,683 US 12,603,650