IP Library Granted Patent US 10,795,513
Granted Patent B2
US 10,795,513 · App. 15/869,680 · Granted Oct 6, 2020

Capacitor structure, display device having capacitor structure, and manufacturing method of capacitor structure

Inventors: Tae Young Choi (Yongin-si, KR); Nae-Eung Lee (Seoul, KR)
Assignees: Samsung Display Co., Ltd.; Research & Business Foundation SUNGKYUNKWAN UNIV
G06F3/044G06F3/0412G06F2203/04102G06F2203/04103G06F2203/04112
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Quick Facts
Patent No.
US 10,795,513
App. No.
15/869,680
Granted
Oct 6, 2020
Kind
B2
Abstract

A capacitor structure includes: a first substrate having a first electrode part provided on one surface thereof; a second substrate having a second electrode part provided on a surface thereof, which faces the first substrate; and a dielectric layer provided between the first substrate and the second substrate, wherein a Poisson's ratio of the first substrate or the second substrate is different from a Poisson's ratio of the dielectric layer. The capacitor structure has a substantially constant capacitance even when the capacitor structure is exposed to external strain.

Claims (34)

1. A capacitor structure, comprising:

a first substrate, wherein the first substrate comprises a first electrode part disposed on one surface of the first substrate;

a second substrate, wherein the second substrate comprises a second electrode part disposed on a surface of the second substrate, the surface of the second substrate faces the first substrate; and

a dielectric layer disposed between the first substrate and the second substrate,

wherein a Poisson's ratio of the first substrate or the second substrate is at least 0.2 greater than a Poisson's ratio of the dielectric layer, and

wherein a thickness of the dielectric layer is less than a thickness of the first substrate and less than a thickness of the second substrate.

2. The capacitor structure of claim 1 , wherein the first substrate, the second substrate, and the dielectric layer are contracted or stretched in a first coordinate direction, a second coordinate direction, and a third coordinate direction.

3. The capacitor structure of claim 2 , wherein a shape change of the dielectric layer in the third coordinate direction with respect to a strain applied in the first coordinate direction or the second coordinate direction is smaller than a shape change of the dielectric layer in the first coordinate direction or a shape change of the dielectric layer in the second coordinate direction.

4. The capacitor structure of claim 2 , wherein the first coordinate direction, the second coordinate direction, and the third coordinate direction constitute a coordinate system selected from a group consisting of a Cartesian coordinate system, a cylindrical coordinate system, and a spherical coordinate system.

5. The capacitor structure of claim 1 , wherein the first electrode part is embedded in the first substrate and the second electrode part is embedded in the second substrate.

6. The capacitor structure of claim 5 , wherein the first electrode part and the second electrode part further comprise a wire-shaped conductor.

7. The capacitor structure of claim 1 , wherein surfaces of the first substrate and the second substrate are hydrophobic.

8. A display device comprising:

the capacitor structure of claim 1 ; and

a display unit configured to display an image.

9. The display device of claim 8 , further comprising a touch sensing unit configured to recognize a touch of a user, wherein the capacitor structure is disposed in the touch sensing unit.

10. The display device of claim 8 , further comprising a transistor for driving the display device, wherein the capacitor structure is disposed in the transistor.

11. A method of manufacturing a capacitor structure, the method comprising:

preparing a first substrate;

forming a mask on the first substrate;

surface-treating an area of the first substrate, which is exposed without the mask;

forming a first electrode part on the surface-treated area of the first substrate;

forming a dielectric layer on the first substrate; and

forming a second electrode part and a second substrate on the dielectric layer,

wherein a Poisson's ratio of the first substrate or the second substrate is at least 0.2 greater than a Poisson's ratio of the dielectric layer, and

wherein a thickness of the dielectric layer is less than a thickness of the first substrate and less than a thickness of the second substrate.

12. The method of claim 11 , wherein the surface-treated area of the first substrate is hydrophilic, and another area of the first substrate, which is not surface-treated, is hydrophobic.

13. The method of claim 11 , wherein the first electrode part is formed by coating a hydrophilic resin composition on the first substrate.

14. The method of claim 13 , wherein the hydrophilic resin composition comprises a wire-shaped conductor.

15. The method of claim 11 , wherein the surface-treating further comprises oxygen-plasma treating the first substrate.

16. The method of claim 11 , wherein the forming of the second electrode part and the second substrate comprises:

forming a mask on the second substrate;

surface-treating an area of the second substrate, which is exposed without the mask; and

forming the second electrode part on the surface-treated area of the second substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 12, 2018
From: CHOI, TAE YOUNG; LEE, NAE-EUNG
To: SAMSUNG DISPLAY CO., LTD.; RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
Reel/Frame 044608/0957 →
Priority Claims (1)
KR 10-2017-0070744 · Jun 7, 2017 · national
Continuity (1)
Related Publication 20180356916A1 · Dec 13, 2018