IP Library › Granted Patent US 10,822,720
Granted Patent B1
US 10,822,720 · App. 16/887,263 · Granted Nov 3, 2020

Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the same

Inventors: Jong Hwi Park (Suwon-si, KR); Myung-Ok Kyun (Suwon-si, KR); Sang Ki Ko (Suwon-si, KR); Kap-Ryeol Ku (Suwon-si, KR); Jung-Gyu Kim (Suwon-si, KR); Jongmin Shim (Hwaseong-si, KR); Byung Kyu Jang (Suwon-si, KR); Jung Woo Choi (Suwon-si, KR)
Assignee: SKC Co., Ltd.
C30B29/36C30B19/08C30B25/08C30B25/10C30B35/002H01L21/02002
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Quick Facts
Patent No.
US 10,822,720
App. No.
16/887,263
Granted
Nov 3, 2020
Kind
B1
Abstract

A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.

Claims (17)

1. A method for preparing a SiC ingot, comprising:

loading a powder composition of a raw material comprising SiC particles into a reactor;

placing a seed crystal on one side of the reactor spaced apart from the powder composition; and

sublimating the powder composition such that the SiC ingot grows from the seed crystal,

wherein a flow factor of the composition is 5 to 35,

wherein when the powder composition is compressed by applying a pressure of 8 kPa, a ratio of a change in an internal friction angle after the compression to an internal friction angle before the compression is 5% to 18%, and

wherein a number of a surface pit of the SiC ingot is 10 K/cm 2 or less.

2. The method of claim 1 , wherein a D 50 of the powder composition is 10 μm to 800 μm.

3. The method of claim 1 , wherein a caliber of the SiC ingot is 4 inches or more.

4. The method of claim 1 , wherein a caliber of the SiC ingot is 6 inches or more.

5. The method of claim 1 , wherein the SiC ingot comprises a 4H SiC single crystal.

6. The method of claim 1 , wherein the SiC ingot is convex or flat.

7. A powder composition of a raw material for preparing a SiC ingot with a surface pit of 10 K/cm 2 or less,

wherein the composition generates a flow when a predetermined pressure is applied,

wherein the powder composition comprises SiC particles,

wherein the powder composition has a flow factor of 5 to 35, and

wherein when the powder composition is compressed by applying a pressure of 8 kPa, a ratio of a change in an internal friction angle after the compression to an internal friction angle before the compression is 5% to 18%.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 20, 2025
From: SENIC INC.
To: EIN CRYSTAL CO., LTD.
Reel/Frame 072990/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE OF CHANGE OF ADDRESS FOR ASSIGNEE PREVIOUSLY RECORDED AT REEL: 058645 FRAME: 0149. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF ADDRESS.. Recorded Apr 10, 2022
From: SENIC INC.
To: SENIC INC.
Reel/Frame 059852/0027 →
CHANGE OF ADDRESS Recorded Jan 5, 2022
From: SENIC INC.
To: SENIC INC.
Reel/Frame 058645/0149 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 13, 2021
From: SKC CO., LTD.
To: SENIC INC.
Reel/Frame 057788/0414 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2020
From: PARK, JONG HWI; KYUN, MYUNG-OK; KO, SANG KI; KU, KAP-RYEOL; KIM, JUNG-GYU; SHIM, JONGMIN; JANG, BYUNG KYU; CHOI, JUNG WOO
To: SKC CO., LTD.
Reel/Frame 052787/0195 →
Priority Claims (1)
KR 10-2019-0083910 · Jul 11, 2019 · national
Cited By (1)
US 12,359,344