Apparatus with a biasing mechanism and methods for operating the same
Methods, apparatuses, and systems related to a memory device are described. The memory device may include a sense amplifier that is configured to simultaneously precharge sensing nodes therein and compensate for threshold voltage mismatches between any transistors therein. The sense amplifier may be configured to charge gut nodes therein without connecting to a separate precharging voltage.
1. An apparatus, comprising:
a first set of power transistors connected to a first power node;
a second set of power transistors connected to a second power node;
isolation transistors connected between the first and second sets of power transistors,
wherein:
the isolation transistors are connected to the first set of power transistors at gut nodes, and
the isolation transistors are connected to the second set of power transistors at sensing nodes; and
at least one equalizing transistor between at least a pair of the gut nodes.
2. The apparatus of claim 1 , wherein:
each transistor in the first set of power transistors is connected to a unique isolation transistor;
each of the isolation transistors is connected to a unique transistor in the second set of power transistors; and
each of the sensing nodes is connected to a digit line configurable to connect a memory cell to the corresponding sensing node.
3. The apparatus of claim 1 , wherein the gut nodes are electrically isolated from voltages separate from the first and second power nodes and the sensing nodes.
4. The apparatus of claim 3 , wherein the gut nodes are isolated from a digit line precharge voltage (VBLP).
5. The apparatus of claim 1 , wherein:
the equalizing transistor is configured to provide a direct electrical connection between the gut nodes when activated; and
each of the isolation transistors are configured to provide a direct electrical connection between a corresponding sensing node and a corresponding gut node when activated.
6. The apparatus of claim 1 , wherein:
the first set of power transistors include a first-set first transistor and a first-set second transistor;
the second set of power transistors include a second-set first transistor and a second-set second transistor;
the isolation transistors include a first isolation transistor and a second isolation transistor;
the gut nodes include a first gut node and a second gut node, wherein:
the first gut node includes a connection between the first-set first transistor and the first isolation transistor, and
the second gut node includes a connection between the first-set second transistor and the second isolation transistor; and
the sensing nodes include a first sensing node and a second sensing node, wherein:
the first sensing node includes a connection between the second-set first transistor and the first isolation transistor, and
the second sensing node includes a connection between the second-set second transistor and the second isolation transistor.
7. The apparatus of claim 6 , wherein:
the first gut node includes direct contact or direct electrical connections between a terminal of the first-set first transistor, a terminal of the first-set second transistor, a first terminal of the equalizing transistor, a terminal of the first isolation transistor, and/or a terminal of the second-set second transistor; and
the second gut node includes direct contact or direct electrical connections between a terminal of the second-set first transistor, a terminal of the second-set second transistor, a second terminal of the equalizing transistor, a terminal of the second isolation transistor, and/or a terminal of the second-set first transistor.
8. The apparatus of claim 6 , wherein:
the first-set first transistor includes a first terminal connected to the first power node, a second terminal connected to the first gut node, and a control terminal connected to the second gut node;
the first-set second transistor includes a first terminal connected to the first power node, a second terminal connected to the second gut node, and a control terminal connected to the first gut node;
the equalizing transistor includes a first terminal connected to the first gut node and a second terminal connected to the second gut node;
the first isolation transistor includes a first terminal connected to the first gut node and a second terminal connected to the first sensing node;
the second isolation transistor includes a first terminal connected to the second gut node and a second terminal connected to the second sensing node;
the second-set first transistor includes a first terminal connected to the first sensing node, a second terminal connected to the second power node, and a control node connected to the second gut node; and
the second-set second transistor includes a first terminal connected to the second sensing node, a second terminal connected to the second power node, and a control node connected to the first gut node.
9. The apparatus of claim 8 , wherein:
the first set of power transistors are p-type field effect transistors (PFETs), wherein the first terminals are sources, the second terminals are drains, and the control terminals are gates; and
the second set of power transistors, the isolation transistors, and/or the equalizing transistor are n-type field effect transistors (NFETs), wherein the first terminals are drains, the second terminals are sources, and the control terminals are gates.
10. The apparatus of claim 1 , wherein the apparatus comprises a sense amplifier within a memory device.