Optoelectronic component and method of operating an optoelectronic component
An optoelectronic component including a first optoelectronic semiconductor chip configured to emit light includes a wavelength from an infrared spectral range, and a second optoelectronic semiconductor chip configured to emit light including a wavelength from a visible spectral range, wherein the optoelectronic component includes a reflector body including a top side and an underside, the reflector body includes a cavity opened toward the top side, a wall of the cavity constitutes a reflector, and the first optoelectronic semiconductor chip is arranged at a bottom of the cavity.
1. An optoelectronic component comprising:
a first optoelectronic semiconductor chip configured to emit light comprising a wavelength from an infrared spectral range, and
a second optoelectronic semiconductor chip configured to emit light comprising a wavelength from a visible spectral range, wherein
the optoelectronic component comprises a reflector body comprising a top side and an underside,
the reflector body comprises a cavity opened toward the top side,
a wall of the cavity constitutes a reflector,
the first optoelectronic semiconductor chip is arranged at a bottom of the cavity,
wherein the optoelectronic component comprises an optical element arranged in the cavity such that light emitted by the first optoelectronic semiconductor chip and light emitted by the second optoelectronic semiconductor chip at least partly pass into the optical element, and the optical element is configured to mix light emitted by the first optoelectronic semiconductor chip and light emitted by the second optoelectronic semiconductor chip, and
the optical element comprises a light-transmissive body comprising a top side and an underside, wherein a reflective coating is arranged at least in sections at side faces of the light-transmissive body extending between the top side and the underside.
2. The optoelectronic component according to claim 1 , wherein the reflector body comprises, at the bottom of the cavity, a first perforation extending between the underside of the reflector body and the cavity, and the first optoelectronic semiconductor chip is arranged in the first perforation.
3. The optoelectronic component according to claim 2 , wherein the optoelectronic component comprises a carrier, the reflector body is arranged on the carrier such that the underside of the reflector body faces the carrier, and the first optoelectronic semiconductor chip is arranged on the carrier.
4. The optoelectronic component according to claim 1 , wherein the cavity widens in funnel-shaped fashion toward the top side of the reflector body.
5. The optoelectronic component according to claim 1 , wherein the optoelectronic component comprises an optical lens arranged at the top side of the reflector body.
6. The optoelectronic component according to claim 5 , wherein the optical lens comprises a conical lens section extending into the cavity of the reflector body.
7. The optoelectronic component according to claim 1 , wherein the cavity comprises a first section widening in a funnel-shaped fashion toward the top side of the reflector body, and a second section widening in a funnel-shaped fashion toward the top side of the reflector body, the first section and the second section are superimposed on one another, and the first perforation is arranged at the bottom of the first section of the cavity and the second perforation is arranged at the bottom of the second section of the cavity.
8. The optoelectronic component according to claim 1 , wherein the top side of the light-transmissive body comprises a micro structuring.
9. The optoelectronic component according to claim 8 , wherein the microstructuring comprises a plurality of microlenses.
10. The optoelectronic component according to claim 1 , wherein the underside of the light-transmissive body comprises a microstructuring.
11. The optoelectronic component according to claim 1 , wherein the second optoelectronic semiconductor chip is arranged at the bottom of the cavity, the light-transmissive body is arranged above the first optoelectronic semiconductor chip and above the second optoelectronic semiconductor chip, and the underside of the light-transmissive body faces the first optoelectronic semiconductor chip and the second optoelectronic semiconductor chip.
12. The optoelectronic component according to claim 1 , the light-transmissive body is arranged above the first optoelectronic semiconductor chip, the underside of the light-transmissive body faces the first optoelectronic semiconductor chip, the second optoelectronic semiconductor chip is arranged laterally next to the light-transmissive body, and a radiation emission side of the second optoelectronic semiconductor chip faces a side face of the light-transmissive body.
13. The optoelectronic component according to claim 1 , wherein the second optoelectronic semiconductor chip is configured as a volume emitting semiconductor chip.
14. The optoelectronic component according to claim 1 , wherein the second optoelectronic semiconductor chip is configured to emit light comprising a wavelength from a red spectral range.
15. The optoelectronic component according to claim 1 , wherein the optoelectronic component comprises a third optoelectronic semiconductor chip configured to emit light comprising a wavelength from a visible spectral range.
16. A method of operating the optoelectronic component according to claim 1 , comprising operating the first optoelectronic semiconductor chip in a pulsed operation, and operating the second optoelectronic semiconductor chip in a continuous operation or pulsed operation that is anticyclic with respect to the pulsed operation of the first optoelectronic semiconductor chip.