IP Library Granted Patent US 10,862,276
Granted Patent B2
US 10,862,276 · App. 16/116,856 · Granted Dec 8, 2020

Method of manufacturing light emitting device and light emitting device

Inventor: Tomokazu Taji (Anan, JP)
Assignee: NICHIA CORPORATION
H01S5/4018G01R31/2601G01R31/2635G01R31/44H01S5/005H01S5/0014H01S5/02272H01S5/02292H01S5/02296H01S5/3013H01S5/0071H01S5/02208H01S5/02248H01S5/02276H01S5/4031
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Quick Facts
Patent No.
US 10,862,276
App. No.
16/116,856
Granted
Dec 8, 2020
Kind
B2
Abstract

A method of manufacturing a light emitting device includes: providing a light emitting device in which a first and second semiconductor laser elements are connected in series; performing a first measurement that includes supplying current to the first semiconductor laser element to measure at least one property of the first semiconductor laser element, and supplying current to the second semiconductor laser element to measure at least one property of the second semiconductor laser element; supplying current to the first and second semiconductor laser elements for a length of time; performing a second measurement that includes supplying current to the first semiconductor laser element to measure the at least one property of the first semiconductor laser element, and supplying current to the second semiconductor laser element to measure the at least one property of the second semiconductor laser element, and evaluating the first and second semiconductor laser elements.

Claims (69)

1. A method of manufacturing a light emitting device, the method comprising, in this order:

providing the light emitting device, which comprises:

a base comprising a first wiring, a second wiring, and a third wiring,

a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base, and

a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base,

wherein the base comprises a frame surrounding the first semiconductor laser and the second semiconductor laser in a top view,

wherein the first wiring comprises:

a first part that is located at an upper surface of the base at a location inward of the frame, and

a second part that is exposed at a location outward of the frame in the top view, and

wherein the first semiconductor laser element and the second semiconductor laser element are connected in series;

performing a first measurement, which comprises:

supplying electric current to the first semiconductor laser element through the first and second parts of the first wiring and through the second wiring to measure at least one property of the first semiconductor laser element, the at least one property of the first semiconductor laser element including at least one of an electrical property or an optical property, and

supplying electric current to the second semiconductor laser element through the second wiring and the third wiring to measure at least one property of the second semiconductor laser element, the at least one property of the second semiconductor laser element including at least one of an electrical property or an optical property;

supplying electric current to both the first semiconductor laser element and the second semiconductor laser element through the first and second parts of the first wiring for a length of time;

performing a second measurement, which comprises:

supplying electric current to the first semiconductor laser element through the first and second parts of the first wiring and through the second wiring to measure said at least one property of the first semiconductor laser element, and

supplying electric current to the second semiconductor laser element through the second wiring and the third wiring to measure said at least one property of the second semiconductor laser element; and

evaluating the first semiconductor laser element based on said at least one property of the first semiconductor laser element measured during the first measurement and the second measurement, and evaluating the second semiconductor laser element based on said at least one property of the second semiconductor laser element measured during the first measurement and the second measurement.

2. The method of manufacturing a light emitting device according to claim 1 , wherein the at least one property of the first semiconductor laser element includes a forward voltage of the first semiconductor laser element, and the at least one property of the second semiconductor laser element includes a forward voltage of the second semiconductor laser element.

3. The method of manufacturing a light emitting device according to claim 1 , wherein:

each of the first semiconductor laser element and the second semiconductor laser element comprises a nitride semiconductor, and

the method further comprises, between the step of providing the light emitting device and the step of performing the first measurement, fixing a cap to the base to create a hermetically sealed space in which the first semiconductor laser element and the second semiconductor laser element are located.

4. The method of manufacturing a light emitting device according to claim 1 , wherein the at least one property of the first semiconductor laser element includes a far field pattern of the first semiconductor laser element, and the at least one property of the second semiconductor laser element includes a far field pattern of the second semiconductor laser element.

5. The method of manufacturing a light emitting device according to claim 1 , wherein in the step of supplying electric current for a length of time, the electric current is supplied to the first semiconductor laser element and the second semiconductor laser element connected in series.

6. The method of manufacturing a light emitting device according to claim 1 , wherein the step of providing the light emitting device comprises:

providing a first laser device comprising the first semiconductor laser element mounted on a first sub-mount, and

providing a second laser device comprising the second semiconductor laser element mounted on a second sub-mount,

simultaneously bonding the first laser device and the second laser device to the base via a bonding material by heating the bonding material without pressing the first laser device and the second laser device, the bonding material containing metal nanoparticles or metal sub-micron particles and an organic solvent.

7. The method of manufacturing a light emitting device according to claim 1 , wherein:

the light emitting device further comprises a sub-mount disposed between the second semiconductor laser element and the second wiring, and

the second wiring and the sub-mount are connected to each other by a wire.

8. The method of manufacturing a light emitting device according to claim 7 , further comprising, after performing the second measurement, disconnecting the wire connecting the second wiring and the sub-mount by supplying electric current that is equal to or greater than a certain amount to the wire.

9. The method of manufacturing a light emitting device according to claim 1 , wherein the first semiconductor laser element is inspected before being electrically connected to the first wiring and the second wiring, and the second semiconductor laser element is inspected before being electrically connected to the second wiring and the third wiring.

10. The method of manufacturing a light emitting device according to claim 1 , wherein, in the step of performing the first measurement, a value of the electric current is gradually increased.

11. A method of manufacturing a light emitting device, the method comprising, in this order:

providing the light emitting device, which comprises:

a base comprising a first wiring, a second wiring, and a third wiring,

a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base, and

a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base,

wherein the base comprises a frame surrounding the first semiconductor laser and the second semiconductor laser in a top view,

wherein the first wiring comprises:

a first part that is located at an upper surface of the base at a location inward of the frame, and

a second part that is exposed at a location outward of the frame in the top view, and

wherein the first semiconductor laser element and the second semiconductor laser element are connected in series;

performing a first measurement, which comprises:

supplying electric current to the first semiconductor laser element through the first and second parts of the first wiring and through the second wiring to measure at least one property of the first semiconductor laser element, the at least one property of the first semiconductor laser element including at least one of an electrical property or an optical property, and

supplying electric current to the second semiconductor laser element through the second wiring and the third wiring to measure at least one property of the second semiconductor laser element, the at least one property of the second semiconductor laser element including at least one of an electrical property or an optical property;

evaluating the first semiconductor laser element based on said at least one property of the first semiconductor laser element measured during the first measurement, and evaluating the second semiconductor laser element based on said at least one property of the second semiconductor laser element measured during the first measurement; and

supplying electric current to both the first semiconductor laser element and the second semiconductor laser element through the first and second parts of the first wiring for a length of time.

12. A method of manufacturing a light emitting device, the method comprising, in this order:

providing the light emitting device, which comprises:

a base comprising a first wiring, a second wiring, and a third wiring,

a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base,

a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base, and

a sub-mount disposed between the second semiconductor laser element and the second wiring,

wherein the first semiconductor laser element and the second semiconductor laser element are connected in series, and

wherein the second wiring and the sub-mount are connected to each other by a wire;

performing a first measurement, which comprises:

supplying electric current to the first semiconductor laser element through the first wiring and the second wiring to measure at least one property of the first semiconductor laser element, the at least one property of the first semiconductor laser element including at least one of an electrical property or an optical property, and

supplying electric current to the second semiconductor laser element through the second wiring and the third wiring to measure at least one property of the second semiconductor laser element, the at least one property of the second semiconductor laser element including at least one of an electrical property or an optical property;

evaluating the first semiconductor laser element based on said at least one property of the first semiconductor laser element measured during the first measurement, and evaluating the second semiconductor laser element based on said at least one property of the second semiconductor laser element measured during the first measurement; and

disconnecting the wire connecting the second wiring and the sub-mount by supplying electric current that is equal to or greater than a certain amount to the wire.

13. The method of manufacturing a light emitting device according to claim 12 , further comprising, after evaluating the first semiconductor laser element:

supplying electric current to the first semiconductor laser element and the second semiconductor laser element for a length of time;

performing a second measurement, which comprises:

supplying electric current to the first semiconductor laser element through the first wiring and the second wiring to measure said at least one property of the first semiconductor laser element, and

supplying electric current to the second semiconductor laser element through the second wiring and the third wiring to measure said at least one property of the second semiconductor laser element; and

evaluating the first semiconductor laser element based on said at least one property of the first semiconductor laser element measured during the first measurement and the second measurement, and evaluating the second semiconductor laser element based on said at least one property of the second semiconductor laser element measured during the first measurement and the second measurement

wherein disconnecting the wire connecting the second wiring and the sub-mount is performed after performing the second measurement.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2018
From: TAJI, TOMOKAZU
To: NICHIA CORPORATION
Reel/Frame 046748/0082 →
Priority Claims (2)
JP 2017-167144 · Aug 31, 2017 · national
JP 2018-156001 · Aug 23, 2018 · national
Continuity (1)
Related Publication 20190067913A1 · Feb 28, 2019
Cited By (2)
US 12,592,539 US 12,712,331