IP Library Granted Patent US 10,873,009
Granted Patent B2
US 10,873,009 · App. 16/198,435 · Granted Dec 22, 2020

Barrier layer functioned novel-structure ceramic converter materials and light emitting devices

Inventors: Zhengbo Yu (Shrewsbury, MA); Hiroaki Miyagawa (Andover, MA)
Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
H01L33/502H01L33/505H01L33/507H01L2933/0041
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Quick Facts
Patent No.
US 10,873,009
App. No.
16/198,435
Granted
Dec 22, 2020
Kind
B2
Abstract

A ceramic wavelength converter assembly has a layered structure. The ceramic wavelength converter assembly includes two first layers having an undoped host material, or a doped host material, two second layers having a barrier material and being disposed between the two first layers and a third layer having an undoped host material, or a doped host material and being disposed between the two second layers. The two first layers include the undoped host material and the third layer includes the doped host material, or the two first layers include the doped host material and the third layer includes the undoped host material.

Claims (32)

1. A ceramic wavelength converter assembly having a layered structure, the ceramic wavelength converter assembly comprising:

two first layers comprising an undoped host material, or a doped host material;

two second layers comprising a barrier material and being disposed between the two first layers; and

a third layer comprising an undoped host material, or a doped host material and being disposed between the two second layers,

wherein the two first layers comprise the undoped host material when the third layer comprises the doped host material, or

wherein the two first layers comprise the doped host material when the third layer comprises the undoped host material.

2. The ceramic wavelength converter assembly of claim 1 , wherein the two first layers comprise the undoped host material and the third layer comprises the doped host material.

3. The ceramic wavelength converter assembly of claim 1 , wherein the doped host material is a phosphor.

4. The ceramic wavelength converter assembly of claim 1 , wherein the barrier material is Al 2 O 3 .

5. The ceramic wavelength converter assembly of claim 1 , wherein the undoped host material comprises a material selected from the group consisting of garnet, MgAl 2 O 4 , silicates, oxynitrides and nitrides.

6. The ceramic wavelength converter assembly of claim 1 , wherein the undoped host material is garnet.

7. The ceramic wavelength converter assembly of claim 1 , wherein the doped host material is doped with Ce, or Gd, or a combination thereof.

8. The ceramic wavelength converter assembly of claim 1 , wherein the doped host material is doped with Ce.

9. The ceramic wavelength converter assembly of claim 1 , wherein the doped host material is doped with at least one dopant in an amount of at least 0.8 at %.

10. The ceramic wavelength converter assembly of claim 1 , wherein the doped host material is YAG:Ce.

11. The ceramic wavelength converter assembly of claim 1 , wherein the undoped host material is YAG and the doped host material is YAG:Ce.

12. The ceramic wavelength converter assembly of claim 1 , wherein the undoped host material is MgAl 2 O 4 .

13. The ceramic wavelength converter assembly of claim 1 , wherein the undoped host material comprises silicates.

14. The ceramic wavelength converter assembly of claim 1 , wherein the undoped host material comprises oxynitrides or nitrides.

15. A light emitting device comprising:

a light-emitting structure configured to emit a primary light having a first peak wavelength; and

a ceramic wavelength converter assembly configured to receive the primary light from the light-emitting structure, the ceramic wavelength converter assembly comprising:

two first layers comprising an undoped host material, or a doped host material;

two second layers comprising a barrier material and being disposed between the two first layers; and

a third layer comprising a doped host material, or an undoped host material and being disposed between the two second layers,

wherein the two first layers comprise the undoped host material when the third layer comprises the doped host material, or

wherein the two first layers comprise the doped host material when the third layer comprises the undoped host material.

16. The light emitting device of claim 15 , wherein the barrier material is Al 2 O 3 .

17. The light emitting device of claim 15 , wherein the undoped host material comprises a material selected from the group consisting of garnet, MgAl 2 O 4 , silicates, oxynitrides and nitrides.

18. The light emitting device of claim 15 , wherein the undoped host material is YAG.

19. The light emitting device of claim 15 , wherein the doped host material is YAG:Ce.

20. The light emitting device of claim 15 , wherein the undoped host material is YAG and the doped host material is YAG:Ce.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2019
From: YU, ZHENGBO; MIYAGAWA, HIROAKI
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 048640/0032 →
Continuity (1)
Related Publication 20200161507A1 · May 21, 2020