Semiconductor device and manufacturing method thereof

1. A semiconductor device including a non-volatile memory disposed in a memory cell area, wherein:

the non-volatile memory comprises:

a first dielectric layer disposed on a substrate;

a floating gate disposed on the dielectric layer;

a control gate;

a selection gate;

a second dielectric layer disposed between the floating gate and the control gate, and having one of a silicon oxide layer, a silicon nitride layer and a multi-layer thereof; and

first to third sidewall spacers, and

the first dielectric layer includes:

a first-first dielectric layer formed on the substrate; and

a second-first dielectric layer formed on the first-first dielectric layer and including a dielectric material having a dielectric constant higher than silicon nitride, the first sidewall spacers are formed on side faces of the control gate, respectively, the second sidewall spacers are disposed on the first sidewall spacers, respectively, and the third sidewall spacers are disposed on the second sidewall spacers, respectively,

the first-first dielectric layer and the second-first dielectric layer extend from a bottom of the floating gate to a bottom of the selection gate,

the third sidewall spacers are disposed on side faces of the floating gate without interposing the first and second sidewall spacers, and are in contact with the second-first dielectric layer.

2. The semiconductor device of claim 1 , wherein the control gate includes one or more layers of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

3. The semiconductor device of claim 1 , wherein the control gate includes a first layer made of one of TaN, TaAlC, TiN, TiC, Co, TiAl, HfTi, TiSi and TaSi, and a second layer disposed over the first layer and made of one or more of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

4. The semiconductor device of claim 1 , wherein the control gate includes a first layer made of one of TiAlC, Al, TiAl, TaN, TaAlC, TiN, TiC and Co and a second layer disposed over the first layer and made of one or more of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

5. The semiconductor device of claim 1 , wherein second-first dielectric layer includes one or more oxides of Hf, Y, Ta, Ti, Al and Zr.

6. The semiconductor device of claim 1 , wherein the third sidewall spacers are made of silicon nitride.

7. The semiconductor device of claim 1 , wherein the second dielectric layer is an ONO film having a silicon nitride layer sandwiched by two silicon oxide layers.

8. A non-volatile memory comprising:

a first dielectric layer disposed on a substrate;

a floating gate disposed on the dielectric layer;

a control gate;

an erase gate;

a selection gate;

a second dielectric layer disposed between the floating gate and the control gate, and having one of a silicon oxide layer, a silicon nitride layer and a multi-layer thereof: and

first to third sidewall spacers, wherein:

the first dielectric layer includes:

a first-first dielectric layer formed on the substrate; and

a second-first dielectric layer formed on the first-first dielectric layer and including a dielectric material having a dielectric constant higher than silicon nitride,

the first sidewall spacer is formed on a side face of the control gate, the second sidewall spacer is disposed on the first sidewall spacer and the third sidewall spacer is disposed on the second sidewall spacer,

the first-first dielectric layer and the second-first dielectric layer extend from a bottom of the floating gate to a bottom of the selection gate,

the third sidewall spacer is disposed between the erase gate and the floating gate and on a side face of the floating gate without interposing the first and second sidewall spacers, and a bottom of the third sidewall spacer is in contact with the second-first dielectric layer, and

the control gate, the erase gate and the selection gate include one or more layers of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

9. The non-volatile memory of claim 8 , wherein the control gate, the erase gate and the selection gate include a first layer made of one of TaN, TaAlC, TiN, TiC, Co, TiAl, TiSi and TaSi, and a second layer disposed over the first layer and made of one or more of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

10. The non-volatile memory of claim 8 , wherein the control gate, the erase gate and the selection gate include a first layer made of one of TiAlC, Al, TiAl, TaN, TaAlC, TiN, TiC and Co and a second layer disposed over the first layer and made of one or more of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

11. The non-volatile memory of claim 8 , wherein second-first dielectric layer includes one or more oxides of Hf, Y, Ta, Ti, Al and Zr.

12. The non-volatile memory of claim 8 , wherein the third sidewall spacer is made of silicon nitride.

13. The non-volatile memory of claim 8 , wherein the second dielectric layer is an ONO film having a silicon nitride layer sandwiched by two silicon oxide layers.

14. A non-volatile memory comprising:

an isolation insulating layer embedded in a semiconductor substrate and separating a memory cell area and a logic circuit area;

a first dielectric layer disposed on the semiconductor substrate;

a floating gate disposed on the dielectric layer;

a control gate;

an erase gate;

a selection gate;

a second dielectric layer disposed between the floating gate and the control gate, and having one of a silicon oxide layer, a silicon nitride layer and a multi-layer thereof; and

first to third sidewall spacers, wherein:

the first dielectric layer includes:

a first-first dielectric layer formed on the substrate; and

a second-first dielectric layer formed on the first-first dielectric layer and including a dielectric material having a dielectric constant higher than silicon nitride,

the first sidewall spacer is formed on a side face of the control gate, the second sidewall spacer is disposed on the first sidewall spacer and the third sidewall spacer is disposed on the second sidewall spacer,

the first-first dielectric layer and the second-first dielectric layer extend from a bottom of the floating gate to a bottom of the selection gate, and protrude from the selection gate, and are not disposed on an upper surface of the isolation insulating layer,

the third sidewall spacer is disposed on a side face of the floating gate without interposing the first and second sidewall spacers, and

the erase gate and the selection gate include a polysilicon layer and one or more layers of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

15. The non-volatile memory of claim 14 , wherein the control gate includes no polysilicon layer and includes one or more layers of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

16. The non-volatile memory of claim 15 , wherein the control gate, the erase gate and the selection gate include a first layer made of one of TaN, TaAlC, TiN, TiC, Co, TiAl, TiSi and TaSi, and a second layer disposed over the first layer and made of one or more of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

17. The non-volatile memory of claim 15 , wherein the control gate, the erase gate and the selection gate include a first layer made of one of TiAlC, Al, TiAl, TaN, TaAlC, TiN, TiC and Co and a second layer disposed over the first layer and made of one or more of Al, Cu, W, Ti, Ta, TiN, TiAl, TiAlC, TiAlN, TaN, NiSi and CoSi.

18. The non-volatile memory of claim 14 , wherein second-first dielectric layer includes one or more oxides of Hf, Y, Ta, Ti, Al and Zr.

19. The non-volatile memory of claim 14 , wherein the third sidewall spacer is made of silicon nitride.

20. The non-volatile memory of claim 14 , wherein the second dielectric layer is an ONO film having a silicon nitride layer sandwiched by two silicon oxide layers.