Systems and methods for improved performance in semiconductor processing
Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.
1. An etching method comprising:
flowing a hydrogen-containing precursor into a semiconductor processing chamber;
flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber;
forming a plasma of the fluorine-containing precursor in the remote plasma region;
etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber;
measuring a radical density within the remote plasma region during the etching; and
halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.
2. The etching method of claim 1 , wherein the measuring is of an atomic trace of hydrogen within the remote plasma region of the semiconductor processing chamber.
3. The etching method of claim 2 , wherein the hydrogen-containing precursor comprises hydrogen, ammonia, or water.
4. The etching method of claim 2 , wherein the measuring is performed with an optical emission spectrometer positioned within a dielectric component at least partially defining the remote plasma region of the semiconductor processing chamber.
5. The etching method of claim 4 , wherein the measuring comprises measuring a peak intensity of radical hydrogen within the remote plasma region of the semiconductor processing chamber.
6. The etching method of claim 2 , further comprising, prior to halting the flow of the hydrogen-containing precursor, identifying an increase in the atomic trace within the remote plasma region.
7. The etching method of claim 6 , wherein the increase correlates to complete removal of the silicon-containing material.
8. The etching method of claim 1 , wherein the remote plasma region is a region defined within the semiconductor processing chamber and separated from the processing region by one or more chamber components.
9. The etching method of claim 1 , further comprising flowing an inert precursor into the remote plasma region and forming a plasma of the inert precursor within the remote plasma region.
10. The etching method claim 9 , wherein a stable plasma of the inert precursor is produced prior to flowing the fluorine-containing precursor into the remote plasma region.
11. The etching method of claim 1 , wherein the hydrogen-containing precursor is flowed to bypass the remote plasma region during the etching method.
12. An etching method comprising:
flowing a hydrogen-containing precursor into a semiconductor processing chamber;
flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber;
forming a plasma of the fluorine-containing precursor in the remote plasma region;
etching in a first etch process a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber;
measuring a radical density within the remote plasma region during the etching;
halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material;
removing the substrate from the semiconductor processing chamber;
forming a plasma of a fluorine-containing precursor in the semiconductor processing chamber;
measuring a radical density of the hydrogen-containing precursor;
extinguishing the plasma of the fluorine-containing precursor when the radical density of the hydrogen-containing precursor reaches a pre-determined threshold; and
performing a second etch process.
13. The etching method of claim 12 , wherein the first etch process and the second etch process are different etch processes.
14. The etching method of claim 12 , wherein the first etch process comprises a first etch for a dual damascene etch process, and wherein the second etch process comprises a second etch for a dual damascene etch process.