Graphene-based semiconductor chip for tunable THz plasmon generation
Methods and apparatus for providing all-optically generated, on-chip propagated and high-efficiency tunable plasmons are described. The plasmon generating apparatus includes a graphene based silicon nitride waveguide (GSiNW) utilizing ‘C+L’ band light sources and detectors that take advantage of the surface 2nd nonlinearity on graphene. The optical generation is accomplished via one or more optical communication lasers through the difference-frequency generation process. The THz frequency and intensity is tunable via an external gate voltage. Using such a device the optical to THz conversion may be made at least an order of magnitude more efficient than prior THz sources, and can be used to make chip-scale room-temperature THz sources, switches, modulators and detectors based on graphene.
1. A plasmon source comprising:
a graphene based silicon nitride waveguide;
at least one light source in optical communication with said waveguide;
a gate electrode in conductive communication with the waveguide; and
wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz frequency graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom.
2. The plasmon source of claim 1 , wherein the THz frequency of the graphene plasmons are tunable via modulation by application of an external gate voltage through the gate electrode.
3. The plasmon source of claim 2 , wherein a Fermi level of the gate electrode is maintained at around a Dirac point.
4. The plasmon source of claim 2 , wherein further comprising a bandpass filter capable of configuring the plasmon source as a plasmon switcher.
5. The plasmon source of claim 1 , wherein the waveguide comprises:
a silicon nitride bus;
a bottom graphene layer disposed atop the bus connecting a drain and a source electrode;
an isolator/capacitance layer disposed atop the bottom graphene layer; and
a top graphene layer disposed atop the isolator/capacitance layer connecting a gate electrode.
6. The plasmon source of claim 5 , wherein a width of the silicon nitride bus is at least 1000 nm and the height is at least 725 nm.
7. The plasmon source of claim 5 , wherein the silicon nitride is contained within an oxide material.
8. The plasmon source of claim 1 , wherein an isolator/capacitance layer comprises alumina.
9. The plasmon source of claim 1 , wherein the pump and signal emissions are polarized.
10. The plasmon source of claim 1 , wherein the light source is a picosecond laser.
11. A plasmon source comprising:
a graphene based silicon nitride waveguide comprising:
a silicon nitride bus,
a bottom graphene layer disposed atop the bus connecting a drain and a source electrode,
an isolator/capacitance layer disposed atop the bottom graphene layer, and
a top graphene layer disposed atop the isolator/capacitance layer;
at least one light source in optical communication with said waveguide;
a gate electrode in conductive communication with the top graphene layer;
wherein the at least one light source is configured to emit at least a pump and a signal emission in opposite directions into the graphene based silicon nitride waveguide such that THz graphene plasmons are excited within the waveguide via enhanced difference frequency generation and emitted therefrom.