Methods of epsilon-near-zero optical modulation
A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.
1. A method of optical phase modulation, comprising:
injecting an optical carrier wave having a carrier wavelength into a silicon optical waveguide having a non-resonant modulator section in which the optical waveguide is optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength, wherein the transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer; and
while the optical carrier wave is propagating in the optical waveguide, applying a time-varying bias voltage across the gate dielectric layer, wherein the applied bias voltage is effective to decrease the ENZ wavelength and thereby shift the ENZ wavelength toward the carrier wavelength,
wherein the time-varying bias voltage is varied in response to a modulation signal, and wherein the applying of the time-varying bias voltage impresses a phase modulation pattern on the carrier wave such that the modulated carrier wave constitutes a phase-modulated optical signal;
and wherein the optical carrier wave is attenuated within the modulator section of the silicon optical waveguide by no more than 10 dB per 90° of phase change.
2. The method of claim 1 , wherein the time-varying bias voltage is applied between an electrical contact to the transparent conductive material layer and an electrical contact to the gate dielectric layer.
3. The method of claim 1 , wherein the transparent conductive material layer is constituted, at least in part, by cadmium oxide.
4. The method of claim 1 , wherein the optical carrier wave has a vacuum wavelength in the range 750 nm to 3 μm.
5. The method of claim 1 , wherein the modulation signal has a digital modulation rate of at least 1 Gbit per second.
6. The method of claim 1 , wherein the applying of the time-varying bias voltage impresses a phase modulation pattern on the carrier wave with a phase modulation depth of at least 90°.
7. The method of claim 1 , wherein the applying of the time-varying bias voltage impresses a phase modulation pattern on the carrier wave with a phase modulation depth of at least 90°, and wherein at least 90° of phase change of the carrier wave is produced within a propagation distance of 10 μm or less in the modulator section of the optical waveguide.
8. The method of claim 1 , wherein the applying of the time-varying bias voltage impresses a phase modulation pattern on the carrier wave with a phase modulation depth of at least 90°, and wherein the optical carrier wave is attenuated within the modulator section of the optical waveguide by no more than 10 dB per 90° of phase change.
9. The method of claim 1 , wherein the applying of the time-varying bias voltage impresses a phase modulation pattern on the carrier wave with a phase modulation depth of at least 90°, wherein: at least 90° of phase change of the carrier wave is produced within a propagation distance of 10 μm or less in the modulator section of the optical waveguide, and the optical carrier wave is attenuated within the modulator section of the optical waveguide by no more than 10 dB per 90° of phase change.
10. The method of claim 1 , wherein the impressing of a phase modulation pattern on the carrier wave is performed with a phase modulation depth, per logarithmic unit of optical loss, per unit length, of at least 0.3/dB-μm.