Modeling of a design in reticle enhancement technology
Methods for reticle enhancement technology (RET) include inputting a target wafer pattern, where the target wafer pattern spans an entire design area. The entire design area is divided into a plurality of tiles, each tile having a halo region surrounding the tile. A proposed mask for the entire design area is iterated until the proposed mask meets criteria towards producing the target wafer pattern. Each iteration includes calculating a predicted wafer pattern for a subset of the plurality of tiles; and updating the proposed mask for that tile; where all tiles in the subset are calculated before the next iteration.
1. A method for reticle enhancement technology (RET) comprising:
a) inputting a target wafer pattern, the target wafer pattern spanning an entire design area;
b) dividing the entire design area into a plurality of tiles, each tile having a halo region surrounding the tile;
c) iterating a proposed mask for the entire design area until the proposed mask meets criteria towards producing the target wafer pattern, wherein each iteration comprises:
calculating a predicted wafer pattern for a subset of the plurality of tiles, the subset having from two to all tiles in the plurality of tiles, wherein the calculating is performed for each tile in the subset and its halo region; and
updating the proposed mask for that tile;
wherein all tiles in the subset are calculated before the next iteration; and
wherein the calculating is performed on a computing platform having an aggregate total memory of all computing nodes of the computing platform, wherein the aggregate total memory holds the target wafer pattern and the proposed mask of the entire design area throughout all iterations.
2. The method of claim 1 , further comprising representing the predicted wafer pattern as a smooth function captured as a function sample array (FSA), wherein the FSA is an array of function values which can be real numbers, complex numbers, or an aggregate of numbers.
3. The method of claim 1 , further comprising representing the target wafer pattern as a smooth function captured as a function sample array (FSA), wherein the FSA is an array of function values which can be real numbers, complex numbers, or an aggregate of numbers.
4. The method of claim 3 , wherein the representing of the target wafer pattern as a FSA comprises applying a low-pass filter to the target wafer pattern.
5. The method of claim 3 , wherein the FSA is band-limited to a spatial frequency cutoff of a substrate lithography system, and is sampled on a grid that meets a Nyquist criterion.
6. The method of claim 1 , wherein the proposed mask is a continuous tone mask (CTM), and the method further comprises representing the CTM as a smooth function captured as a function sample array (FSA), wherein the FSA is an array of function values which can be real numbers, complex numbers, or an aggregate of numbers.
7. The method of claim 1 , wherein the calculating for each tile further comprises calculating cost and derivative data, the cost and the derivative data being based on comparing the predicted wafer pattern to the target wafer pattern, wherein the cost is represented as a smooth function.
8. A method for reticle enhancement technology (RET) comprising:
a) inputting a target wafer pattern, the target wafer pattern spanning an entire design area;
b) dividing the entire design area into a plurality of tiles, each tile having a halo region surrounding the tile;
c) iterating a proposed mask for the entire design area until the proposed mask meets criteria towards producing the target wafer pattern, wherein each iteration comprises:
calculating a predicted wafer pattern for a subset of the plurality of tiles, the subset having from two to all tiles in the plurality of tiles, wherein the calculating is performed for each tile in the subset and its halo region; and
updating the proposed mask for that tile;
wherein all tiles in the subset are calculated before the next iteration; and
wherein each iteration further comprises using the updated proposed mask for an individual tile in the plurality of tiles to update halo regions of tiles that neighbor the individual tile.
9. The method of claim 8 , further comprising representing the predicted wafer pattern as a smooth function captured as a function sample array (FSA), wherein the FSA is an array of function values which can be real numbers, complex numbers, or an aggregate of numbers.
10. The method of claim 8 , further comprising representing the target wafer pattern as a smooth function captured as a function sample array (FSA), wherein the FSA is an array of function values which can be real numbers, complex numbers, or an aggregate of numbers.
11. The method of claim 10 , wherein the representing of the target wafer pattern as a FSA comprises applying a low-pass filter to the target wafer pattern.
12. The method of claim 10 , wherein the FSA is band-limited to a spatial frequency cutoff of a substrate lithography system, and is sampled on a grid that meets a Nyquist criterion.
13. The method of claim 8 , wherein the proposed mask is a continuous tone mask (CTM), and
the method further comprises representing the CTM as a smooth function captured as a function sample array (FSA), wherein the FSA is an array of function values which can be real numbers, complex numbers, or an aggregate of numbers.
14. The method of claim 8 , wherein the calculating for each tile further comprises calculating cost and derivative data, the cost and the derivative data being based on comparing the predicted wafer pattern to the target wafer pattern, wherein the cost is represented as a smooth function.