Method and system for mass assembly of thin film materials
Sheets of a thin film material are attached to a carrier wafer. The carrier wafer and the attached sheets of thin film material are separated to form chiplet carriers. Each chiplet carrier includes a portion of the sheets of thin film material attached to a portion of the carrier wafer. The chiplet carriers are placed on an assembly surface in a random pattern. The chiplet carriers are arranged from the random pattern to a predetermined pattern, and the portions of the thin film material are transferred from the chiplet carriers in parallel to a target substrate.
1. A method, comprising:
attaching sheets of thin film material to a carrier wafer;
separating the carrier wafer and the attached sheets of thin film material to form a plurality of chiplet carriers, each chiplet carrier comprising a portion of the sheets of thin film material attached to a portion of the carrier wafer;
placing the chiplet carriers on an assembly surface in a disordered pattern;
arranging the chiplet carriers from the disordered pattern to a predetermined pattern; and
transferring the portions of the thin film material from the chiplet carriers to a target substrate.
2. The method of claim 1 , wherein the thin film material comprises a van der Waals material.
3. The method of claim 1 , wherein transferring the portions of the thin film material from the chiplet carriers to a target substrate comprises:
pressing a stamp against the chiplet carriers on the assembly surface, the stamp comprising an array of mildly adhesive protrusions in the predetermined pattern so that each of the protrusion contacts the portion of thin film material;
separating the stamp from the chiplet carriers so that the portions of the thin film material are removed in parallel from the portions of the carrier wafer by the protrusions; and
pressing the stamp onto the target substrate such that the portions of the thin film material are deposited in parallel on the target substrate.
4. The method of claim 3 , wherein the stamp is pressed against the chiplet carriers at an elevated temperature, and wherein the stamp and chiplet carriers are rapidly cooled before separating the stamp from the chiplet carriers.
5. The method of claim 3 , wherein portions of a second thin film material are on each of the protrusions before pressing the stamp against the chiplet carriers, and wherein pressing the stamp against the chiplet carriers causes the protrusions to contact the portion of thin film material via the second thin film material, thereby causing the portion of the thin film material and the second thin film material to form a material stack.
6. The method of claim 5 , wherein pressing the stamp onto the target substrate causes the material stack to be deposited on the target substrate.
7. The method of claim 1 , further comprising utilizing a sensor and processor to map the sheets of thin film material in relation to the portions of the carrier wafer before separating the carrier wafer to form the chiplet carriers, the mapping used to select the chiplet carriers to be arranged in the predetermined pattern.
8. The method of claim 7 , wherein the mapping is further used to define an orientation of each of the chiplets in the predetermined pattern.
9. The method of claim 7 , further comprising assigning each of the chiplet characters a unique identifier that is associated with characteristics determined from the mapping.
10. The method of claim 9 , wherein the unique identifiers and mapping are used to arrange the chiplet carriers from the disordered pattern to the predetermined pattern.
11. The method of claim 1 , further comprising marking a unique identifier on each of the chiplets, the unique identifiers being used in arranging the chiplet carriers from the disordered pattern to the predetermined pattern.
12. The method of claim 1 , wherein the chiplet carriers comprise edge dimensions on the order of millimeters to micrometers.
13. The method of claim 1 , wherein arranging the chiplet carriers from the disordered pattern to the predetermined pattern comprises using electrostatic actuation.
14. A method, comprising:
attaching sheets of thin film material to a carrier wafer, the carrier wafer separable to form a plurality of chiplets;
mapping the sheets of thin film material in relation to chiplets via a sensor and a processor, the mapping determining an orientation of the portions of the sheets of thin film material relative to the chiplets;
separating the carrier wafer and the attached sheets of thin film material to form chiplet carriers comprising the portions of the sheets of thin film material attached to the respective chiplets;
placing the chiplet carriers on an assembly surface in a disordered pattern;
arranging the chiplet carriers from the disordered pattern to a predetermined pattern based on the mapping; and
transferring the portions of the thin film material from the chiplet carriers to a target substrate.
15. The method of claim 14 , wherein unique identifiers and mapping are used to arrange the chiplet carriers from the disordered pattern to the predetermined pattern.
16. The method of claim 14 , wherein the thin film material comprises a van der Waals material.
17. The method of claim 14 , wherein the assembly surface comprises a micro assembler with a plurality of actuators that arrange the chiplet carriers from the disordered pattern to the predetermined pattern.
18. The method of claim 17 , wherein a processor is coupled to the micro assembler and operable to move the chiplet carriers across the assembly surface to desired locations within the predetermined pattern.
19. The method of claim 17 , wherein the actuators comprise electrodes.
20. The method of claim 1 , wherein the assembly surface comprises a micro assembler with a plurality of actuators that arrange the chiplet carriers from the disordered pattern to the predetermined pattern.
21. The method of claim 20 , wherein a processor is coupled to the micro assembler and operable to move the chiplet carriers across the assembly surface to desired locations within the predetermined pattern.
22. The method of claim 20 , wherein the actuators comprise electrodes.