Sensor device and method for manufacturing the same
A sensor device is provided. The sensor device includes at least one sensor unit. The sensor unit includes at least one sensor element, an interlayer, a passivation layer, a micro-lens structure, an opening, and a first reflecting layer. The interlayer is disposed on the sensor element. The passivation layer is disposed on the interlayer. The micro-lens structure is disposed on the passivation layer. The opening is disposed in the micro-lens structure. The first reflecting layer is disposed on the micro-lens structure. In addition, the first reflecting layer extends from the opening to the passivation layer.
1. A sensor device, comprising:
at least one sensor unit, comprising:
at least one sensor element;
an interlayer disposed on the at least one sensor element;
a passivation layer disposed on the interlayer;
a micro-lens structure disposed on the passivation layer;
an opening disposed in the micro-lens structure; and
a first reflecting layer disposed on the micro-lens structure,
wherein the first reflecting layer extends from the opening to the passivation layer, wherein the micro-lens structure is in contact with the passivation layer.
2. The sensor device as claimed in claim 1 , wherein the first reflecting layer extends from a sidewall of the opening to a top surface of the passivation layer.
3. The sensor device as claimed in claim 1 , wherein a material of the first reflecting layer has a property of high reflection for emission light.
4. The sensor device as claimed in claim 1 , wherein in a cross-sectional view, the micro-lens structure has a shape of a semi-circle, semi-ellipse, triangle, rectangle, or another shape that can reflect light toward the at least one sensor element.
5. The sensor device as claimed in claim 1 , wherein the micro-lens structure has a parallel light or a single focus point corresponding to one sensor element, two focus points corresponding to two sensor elements, or a plurality of focus points corresponding to three or four sensor elements.
6. The sensor device as claimed in claim 1 , wherein the at least one sensor unit further comprises a second reflecting layer disposed between the interlayer and the micro-lens structure.
7. The sensor device as claimed in claim 6 , wherein the opening overlaps the second reflecting layer.
8. The sensor device as claimed in claim 6 , wherein a material of the second reflecting layer has a property of high reflection for excitation light.
9. The sensor device as claimed in claim 6 , wherein the at least one sensor unit further comprises a waveguide structure disposed above the second reflecting layer.
10. The sensor device as claimed in claim 9 , wherein the opening overlaps the waveguide structure.
11. The sensor device as claimed in claim 1 , wherein the interlayer comprises a filter, a passivation material, a metal layer, or a combination thereof.
12. The sensor device as claimed in claim 11 , wherein the filter is surrounded by the metal layer.
13. The sensor device as claimed in claim 11 , wherein the filter comprises a uniform filter, a pixelated filter, a rejection filter, or a combination thereof.
14. The sensor device as claimed in claim 1 , wherein the opening comprises a reaction region, and the reaction region corresponds to at least one sensor element.
15. The sensor device as claimed in claim 14 , wherein the reaction region corresponds to one, two, three or four sensor elements.
16. A method for manufacturing a sensor device, comprising:
providing a substrate comprising at least one sensor element;
forming an interlayer on the at least one sensor element;
forming a passivation layer on the interlayer;
forming a micro-lens structure on the passivation layer;
conformally forming a first reflecting layer on the micro-lens structure; and
removing a portion of the first reflecting layer and a portion of the micro-lens structure, and forming an opening in the micro-lens structure,
wherein the first reflecting layer extends from the opening to the passivation layer, and the micro-lens structure is in contact with the passivation layer after the opening is formed.
17. The method for manufacturing a sensor device as claimed in claim 16 , further comprising forming a second reflecting layer on the interlayer before forming the passivation layer.
18. The method for manufacturing a sensor device as claimed in claim 17 , further comprising forming a waveguide structure on the passivation layer before forming the micro-lens structure.
19. The method for manufacturing a sensor device as claimed in claim 17 , further comprising patterning the second reflecting layer to form an aperture.
20. The method for manufacturing a sensor device as claimed in claim 16 , further comprising forming a planarization layer on the first reflecting layer.