Organic ligand and preparation method thereof, quantum dot structure material, quantum-dot-containing layer, and light emitting diode
The present disclosure provides quantum dot organic ligand and preparation method thereof, quantum dot structure material, quantum-dot-containing layer, and quantum-dot-containing light emitting diode. The quantum dot organic ligand have the following structure R1-(R2) n -R3, wherein R1 is a chelating group capable of chelating with a metal; R2 is a group having a conjugated electron pair, and n is a positive integer; and R3 is organic group. The conjugated electron pair structure of R2 facilitates delocalization of electrons, which can improve the transport and conduction of electrons and/or holes, thereby improving the efficiency of quantum dots and lowering the turn-on voltage.
1. A quantum dot organic ligand, comprising a structure represented by a formula selected from a group consisting of:
and
R1-(R2-R3) n , wherein R1 is a chelating group capable of chelating with a metal, R2 comprises a structure selected from the group consisting of a 9, 10-di(2-naphthyl)anthracene structure, a rubrene structure, and a combination thereof, R3 is an organic group connected to R2;
wherein n is a positive integer.
2. The quantum dot organic ligand according to claim 1 , wherein R1 comprises a group selected from the group consisting of a phosphine group, a phosphonic acid group, an amino group, a mercapto group, a hydroxyl group, and a combination thereof.
3. The quantum dot organic ligand according to claim 1 , wherein R3 comprises an alkane group.
4. A quantum dot structure, comprising:
the quantum dot organic ligand according to claim 1 in chelated form; and
a core or a core-shell;
wherein the quantum dot organic ligand is chelated to the core, or to a shell part of the core-shell.
5. The quantum dot structure of claim 4 , comprising a structure represented by Formula (3):
wherein:
QD is an inorganic part of the quantum dot structure, comprising the core or the core-shell.
6. The quantum dot structure according to claim 5 , wherein the inorganic part of the quantum dot structure is made of one or more materials selected from CdS, CdSe, CdTe, ZnSe, InP, PbS, CsPbCl 3 , CsPbBr 3 , CsPhI 3 , CsPbCl x Br 3-x , CsPbBr x I 3-x , CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl 3 /ZnS, CsPbBr 3 /ZnS, CsPhI 3 /ZnS, CsPbClxBr 3-x /ZnS, CsPbBrxI 3-x /ZnS, or a combination thereof, wherein x is a positive integer and x<3.
7. The quantum dot structure of claim 4 , comprising a structure represented by Formula (4)
wherein:
QD represents an inorganic part of the quantum dot structure, comprising the core or the core-shell.
8. The quantum dot structure according to claim 7 , wherein the inorganic part of the quantum dot structure is made of one or more materials selected from CdS, CdSe, CdTe, ZnSe, InP, PbS, CsPbCl 3 , CsPbBr 3 , CsPhI 3 , CsPbCl x Br 3-x , CsPbBr x I 3-x , CdS/ZnS, CdSe/ZnS, ZnSe, InP/ZnS, PbS/ZnS, CsPbCl 3 /ZnS, CsPbBr 3 /ZnS, CsPhI 3 /ZnS, CsPbClxBr 3-x /ZnS, CsPbBrxI 3-x /ZnS, or a combination thereof, wherein x is a positive integer and x<3.
9. A quantum-dot-containing layer, comprising the quantum dot structure according to claim 4 .
10. A quantum-dot-based light emitting diode, comprising a quantum-dot-containing layer according to claim 9 .