Dual core waveguide
The invention described herein pertains to the structure and formation of dual core waveguide structures and to the formation of optical devices including spot size converters from these dual core waveguide structure for the receiving and routing of optical signals on substrates, interposers, and sub-mount assemblies.
1. A method comprising
forming a first waveguide on a substrate,
wherein the first waveguide has a first thickness comparable with a thickness of a core of an optical fiber and configured for directly coupling with the optical fiber;
forming a second waveguide,
wherein the second waveguide is formed adjacent to the first waveguide along a length of the first waveguide,
wherein the second waveguide comprises a first portion, wherein the first portion has a second thickness configured so that the first portion is weakly coupled to the first waveguide for signal propagation with the first waveguide,
wherein the second waveguide comprises a second portion, wherein the second portion has a third thickness configured so that the second portion is decoupled from the first waveguide,
wherein the second thickness and the third thickness are smaller than the first thickness,
wherein forming the first portion further comprises forming a flat section having the second thickness,
wherein forming the first portion comprises forming an adiabatic transition section having a tapered thickness from the second thickness to the third thickness,
wherein the adiabatic transition section is disposed between the flat section and the second portion,
wherein the adiabatic transition section is configured for optimal signal propagation between the flat portion and the second portion.
2. A method as in claim 1 , further comprising
coupling the optical fiber to the first waveguide, so that either
an optical signal from the optical fiber is configured to transmit to the second waveguide through the first waveguide, or
an optical signal from the second waveguide is configured to transmit to the optical fiber through the first waveguide.
3. A method as in claim 1 ,
wherein the length of the first portion is configured to optimize a signal propagation between the first and second waveguides.
4. A method as in claim 1 , further comprising
forming a layer between the first and second waveguides,
wherein the layer comprises an index of refraction higher than the index of refraction of the first waveguide.
5. A method as in claim 1 ,
wherein forming the first portion comprises forming a horizontal tapered section between a width comparable with the thickness of the core of the optical fiber and a width of the second portion.
6. A method as in claim 1 ,
wherein forming the adiabatic transition section comprises patterning a layer using a gray scale lithography process.
7. A method as in claim 1 ,
wherein forming the adiabatic transition section comprises patterning a layer using an aspect ratio dependent etch process.
8. A method as in claim 1 ,
wherein forming the flat section comprises forming a horizontal tapered section between a width comparable with the thickness of the core of the optical fiber and a width of the adiabatic transition section,
wherein forming the adiabatic transition section comprises forming a horizontal tapered section between a width of the adiabatic transition section and a width of the second portion.
9. A method as in claim 1 ,
wherein forming the first waveguide comprises forming a repeated stack of two or more SiON layers on a buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction.
10. A method as in claim 1 ,
wherein forming the first waveguide comprises forming a repeated stack of two or more SiON layers, wherein the two or more layers comprise layers having different indexes of refraction,
wherein each layer of the repeated stack comprises a stoichiometry of Si, O, and N to provide a stress having a magnitude less than or equal to 20 MPa.
11. A method as in claim 1 ,
wherein forming the first waveguide comprises forming a repeated stack of two or more SiON layers, wherein the two or more layers comprise layers having different indexes of refraction,
wherein each layer of the repeated stack comprises a level of impurity or a level of homogeneity to provide an optical loss less than or equal to 1 dB/cm.
12. A method as in claim 1 ,
wherein forming the second waveguide comprises
depositing a layer,
patterning the layer to form the second portion,
patterning a portion of the layer to form the first portion.
13. A method comprises
forming a first waveguide,
wherein the first waveguide has a first thickness comparable with a thickness of a core of an optical fiber and configured for directly coupling with the optical fiber;
forming a second waveguide,
wherein the second waveguide is formed adjacent to the first waveguide along a length of the first waveguide,
wherein the second waveguide comprises a first portion, wherein the first portion has a second thickness configured so that the first portion is weakly coupled to the first waveguide for signal propagation with the first waveguide,
wherein the second waveguide is configured to be directly or indirectly coupled to a photonic integrated circuit,
wherein the second waveguide comprises a second portion,
wherein the second portion comprises an array waveguide, a grating, a filter, a blocker, a prism, a combiner, a multiplexer, a de-multiplexer, a splitter, an echelle grating, an optical device, an optoelectronic device, or a combination thereof.
14. A method as in claim 13 , further comprising
coupling the optical fiber to the first waveguide and the photonic integrated circuit to the optical device second waveguide, so that either
an optical signal from the optical fiber is configured to transmit to the second waveguide through the first waveguide, and to the photonic integrated circuit, or
an optical signal from the photonic integrated circuit is configured to transmit to the first waveguide through the second waveguide, and then to the optical fiber.
15. A method comprising
forming a first waveguide on a substrate,
wherein the first waveguide has a first thickness comparable with a thickness of a core of an optical fiber and configured for directly coupling with the optical fiber;
forming a second waveguide,
wherein the second waveguide is formed adjacent to the first waveguide along a length of the first waveguide,
wherein the second waveguide comprises a first portion, wherein the first portion has a second thickness configured so that the first portion is weakly coupled to the first waveguide for signal propagation with the first waveguide,
wherein the second waveguide comprises a second portion, wherein the second portion has a third thickness configured so that the second portion is decoupled from the first waveguide,
wherein the second thickness and the third thickness are smaller than the first thickness,
wherein forming the first portion comprises forming a horizontal tapered section between a width comparable with the thickness of the core of the optical fiber and a width of the second portion.
16. A method as in claim 15 , further comprising
forming a layer between the first and second waveguides,
wherein the layer comprises an index of refraction higher than the index of refraction of the first waveguide.
17. A method as in claim 15 ,
wherein the second waveguide has an index of refraction greater than an index of refraction of the first waveguide.
18. A method as in claim 15 ,
wherein forming the first portion comprises forming an adiabatic transition section having a tapered thickness from the second thickness to the third thickness.
19. A method as in claim 15 ,
wherein forming the first waveguide comprises forming a repeated stack of two or more SiON layers on a buffer layer, wherein the two or more layers comprise at least two layers having different indexes of refraction.
20. A method as in claim 15 ,
wherein the second waveguide comprises an array waveguide, a grating, a filter, a blocker, a prism, a combiner, a multiplexer, a de-multiplexer, a splitter, an echelle grating, an optical device, an optoelectronic device, or a combination thereof.