3D NAND flash and operation method thereof
An operation method for a 3D NAND flash includes writing data into a WLn layer of the plurality of wordline layers of an unselect bit line of the plurality of bit lines in a write operation; and applying a first pass voltage on at least a first WL layer of the plurality of wordline layers of the unselect bit line of the plurality of bit lines and applying a second pass voltage on at least a second WL layer of the plurality of wordline layers of the unselect bit line of the plurality of bit lines; wherein the first pass voltage is lower than the second pass voltage to reduce a difference of channel potential between the WLn layer and the at least a first WL layer when a pre-pulse phase is removed from a verify phase.
1. An operation method for a 3D NAND flash having a plurality of bit lines, wherein the plurality of bit lines comprises a plurality of wordline (WL) layers, the operation method comprising:
writing data into a WLn layer of the plurality of wordline layers of an unselect bit line of the plurality of bit lines according to a writing sequence from a first end of the plurality of wordline layers to a second end of the plurality of wordline layers in a write operation; and
applying a first pass voltage on at least a first WL layer of the plurality of wordline layers of the unselect bit line of the plurality of bit lines and applying a second pass voltage on at least a second WL layer of the plurality of wordline layers of the unselect bit line of the plurality of bit lines;
wherein the first pass voltage is lower than the second pass voltage to reduce a difference of channel potential between the WLn layer and the at least a first WL layer when a pre-pulse phase is removed from a verify phase.
2. The operation method of claim 1 , wherein the at least a first WL layer is between the first end and the WLn layer of the plurality of wordline layers, and the at least a second WL layer is between the WLn layer and the second end of the plurality of wordline layers.
3. The operation method of claim 1 , wherein the at least a first WL layer of the plurality of wordline layers is in an erased state.
4. The operation method of claim 1 , wherein the second pass voltage is larger than a maximal program-verify level of the 3D NAND flash to turn on a channel of a corresponding bit line.
5. The operation method of claim 1 , wherein the first pass voltage is higher than a minimal distribution of program-verify level of the 3D NAND flash in the verify phase.
6. The operation method of claim 1 , wherein the verify phase is performed after the data are written into the WLn layer of the plurality of wordline layers.
7. The operation method of claim 1 , wherein the first end and the second end of the plurality of wordline layers are a top select gate and a bottom select gate.
8. The operation method of claim 1 , further comprising:
applying the second pass voltage on the at least a first WL layer and the at least a second WL layer when the unselect bit line is in a read operation.
9. The operation method of claim 8 , wherein at least a verify voltage corresponding to at least a program-verify level of the verify phase is increased to compensate a difference between the write operation and the read operation.
10. A 3D NAND flash, having a plurality of bit lines, wherein the plurality of bit lines comprises a plurality of wordline (WL) layers, the 3D NAND flash comprising:
a select bit line;
at least an unselect bit line;
a controller, configured to write data into a WLn layer of the plurality of wordline layers of the at least an unselect bit line of the plurality of bit lines according to a writing sequence from a first end of the plurality of wordline layers to a second end of the plurality of wordline layers in a write operation, apply a first pass voltage on at least a first WL layer of the plurality of wordline layers of the at least an unselect bit line of the plurality of bit lines and apply a second pass voltage on at least a second WL layer of the plurality of wordline layers of the at least an unselect bit line of the plurality of bit lines;
wherein data are written into the WLn layer according to a writing sequence from a first end of the plurality of wordline layers to a second end of the plurality of wordline layers in a write operation;
wherein the first pass voltage is lower than the second pass voltage to reduce a difference of channel potential between the WLn layer and the at least a first WL layer when a pre-pulse phase is removed from a verify phase.
11. The 3D NAND flash of claim 10 , wherein the at least a first WL layer is between the first end and the WLn layer of the plurality of wordline layers, and the at least a second WL layer is between the WLn layer and the second end of the plurality of wordline layers.
12. The 3D NAND flash of claim 10 , wherein the at least a first WL layer of the plurality of wordline layers is in an erased state.
13. The 3D NAND flash of claim 10 , wherein the second pass voltage is larger than a maximal program-verify level of the 3D NAND flash to turn on a channel of a corresponding bit line.
14. The 3D NAND flash of claim 10 , wherein the first pass voltage is higher than a minimal distribution of program-verify level of the 3D NAND flash in the verify phase.
15. The 3D NAND flash of claim 10 , wherein the verify phase is performed after the data are written into the WLn layer of the plurality the plurality of wordline layers.
16. The 3D NAND flash of claim 10 , wherein the first end and the second end of the plurality of wordline layers are a top select gate and a bottom select gate.
17. The 3D NAND flash of claim 10 , wherein the at least a first WL layer and the at least a second WL layer are applied with the second pass voltage when the at least an unselect bit line is in a read operation.
18. The 3D NAND flash of claim 17 , wherein at least a verify voltage corresponding to at least a program-verify level of the verify phase is increased to compensate a difference between the write operation and the read operation.