Source and drain epitaxy and isolation for gate structures
Semiconductor devices and methods for forming the semiconductor devices include forming a sacrificial layer on a substrate on each side of a stack of nanosheets, the stack of nanosheets including first nanosheets and second nanosheets stacked in alternating fashion with a dummy gate structure formed thereon. Source and drain regions are grown on from the sacrificial layer and from ends of the second nanosheets to form source and drain regions in contact with each side of the stack of nanosheets. The sacrificial layer is removed. An interlevel dielectric is deposited around the source and drain regions to fill between the source and drain regions and the substrate.
1. A method for forming a semiconductor device, the method comprising:
forming a sacrificial layer on a substrate on each side of a stack of nanosheets, the stack of nanosheets including first nanosheets and second nanosheets stacked in alternating fashion with a dummy gate structure formed thereon;
growing source and drain regions on from the sacrificial layer and from ends of the second nanosheets to form source and drain regions in contact with each side of the stack of nanosheets;
removing the sacrificial layer; and
depositing an interlevel dielectric around the source and drain regions to fill between the source and drain regions and the substrate.
2. The method as recited in claim 1 , further including forming a sidewall hardmask on each side of the stack of nanosheets and the dummy gate structure between the sacrificial layer and the stack of nanosheets.
3. The method as recited in claim 1 , further including forming a dummy gate structure on a stack of nanosheets over a substrate, including:
depositing a dummy gate material across a top nanowire; and
forming gate spacers on each side of the dummy gate material.
4. The method as recited in claim 1 , further including forming inner spacers on the recessed ends of the first nanosheets by recessing ends of the first nanosheets.
5. The method as recited in claim 1 , further including selectively removing the dummy gate material and the first nanosheets to form gate conductor cavities.
6. The method as recited in claim 5 , further including:
lining the gate conductor cavities with a gate dielectric; and
filing the gate conductor cavities with a gate conductor to form a gate structure.
7. The method as recited in claim 1 , wherein the sacrificial layer includes a material selectively etchable relative to both the first nanosheets and the second nanosheets.
8. The method as recited in claim 1 , further including forming contacts in the interlevel dielectric down to the source and drain regions.
9. The method as recited in claim 1 , wherein the sacrificial layer has a thickness less than about the thickness of a combination of a bottom-most first nanowire and a bottom-most second nanowire relative to the substrate at a bottom of the nanowire stack.
10. A method for forming a semiconductor device, the method comprising:
forming a dummy gate structure on a stack of nanosheets over a substrate, the stack of nanosheets including first nanosheets and second nanosheets stacked in alternating fashion;
recessing ends of the first nanosheets;
forming inner spacers on the recessed ends of the first nanosheets;
forming a sidewall hardmask on each side of the stack of nanosheets and the dummy gate structure;
forming a sacrificial layer on the substrate on each side of the stack of nanosheets;
recessing the sidewall hardmask down to the sacrificial layer;
growing source and drain regions on from the sacrificial layer and from ends of the second nanosheets to form source and drain regions in contact with each side of the stack of nanosheets;
removing the sacrificial layer; and
depositing an interlevel dielectric around the source and drain regions to fill between the source and drain regions and the substrate.
11. The method as recited in claim 10 , wherein forming a dummy gate structure includes:
depositing a dummy gate material across a top nanowire; and
forming gate spacers on each side of the dummy gate material.
12. The method as recited in claim 10 , further including selectively removing the dummy gate material and the first nanosheets to foi n gate conductor cavities.
13. The method as recited in claim 12 , further including:
lining the gate conductor cavities with a gate dielectric; and
filing the gate conductor cavities with a gate conductor to form a gate structure.
14. The method as recited in claim 10 , wherein the sacrificial layer includes a material selectively etchable relative to both the first nanosheets and the second nanosheets.
15. The method as recited in claim 10 , further including forming contacts in the interlevel dielectric down to the source and drain regions.
16. The method as recited in claim 10 , wherein the sacrificial layer has a thickness less than about the thickness of a combination of a bottom-most first nanowire and a bottom-most second nanowire relative to the substrate at a bottom of the nanowire stack.