Substrates and methods of using those substrates
A method of dislodging contamination from a part of an apparatus used in a patterning process, the method including: providing a cleaning substrate into contact with the part of the apparatus while the part is attached to the apparatus, the cleaning substrate comprising a material configured to chemically react with the contamination; and dislodging contamination on the part of the apparatus by chemical reaction between the material and the contamination.
1. A method of dislodging contamination from a part of an apparatus used in a patterning process, the method comprising:
providing a cleaning substrate into contact with the part of the apparatus while the part is attached to the apparatus, the cleaning substrate comprising a material configured to chemically react with the contamination and the material comprising a polymer comprising an amine compound or amine functional group, exposed to hydrofluoric acid; and
dislodging contamination on the part of the apparatus by chemical reaction between the material and the contamination.
2. The method of claim 1 , wherein the contamination comprises silica and the chemical reaction is between the material and silica.
3. The method of claim 1 , wherein the material comprises ammonium fluoride.
4. The method of claim 1 , wherein the material comprises cerium oxide.
5. The method of claim 1 , further comprising introducing relative movement between the cleaning substrate and the part of the apparatus to dislodge contamination from the part of the apparatus.
6. The method of claim 5 , wherein the introducing the relative movement comprises repeatedly bringing the cleaning substrate and the part of the apparatus into and out of contact and between at least a few of the occasions where the cleaning substrate is out of contact with the part of the apparatus, causing the cleaning substrate to be displaced or rotated so that a portion of the cleaning substrate comes into contact with a different portion of the part of the apparatus than it previously contacted.
7. The method of claim 1 , further comprising removing the dislodged contamination from the apparatus using the cleaning substrate.
8. The method of claim 1 , wherein the cleaning substrate has essentially the same dimensions as a substrate to which a resist is applied.
9. The method of claim 1 , comprising the providing the cleaning substrate in contact with the part, between consecutive periods of when the cleaning substrate is out of contact with the part, for a time period selected from the range of 15 seconds to 10 minutes, selected from the range of 30 seconds to 5 minutes, or selected from the range of 1 to 4 minutes.
10. The method of claim 1 , further comprising wetting the cleaning substrate and/or the part of the apparatus contacted by the cleaning substrate.
11. An apparatus used in a process to apply patterns to a substrate, the apparatus comprising a control system configured to cause performance of the method of claim 1 .
12. A non-transitory computer program product comprising machine-readable instructions for causing a processor to cause performance of the method of claim 1 .
13. A cleaning substrate for dislodging contamination from a part of an apparatus used in a patterning process, the cleaning substrate having a size and shape essentially corresponding to a substrate for device manufacturing in the patterning process and the cleaning substrate comprising a material configured to chemically react with the contamination and the material comprising a polymer comprising an amine compound or amine functional group, exposed to hydrofluoric acid.
14. The cleaning substrate of claim 13 , wherein the contamination comprises silica and the chemical reaction is between the material and silica.
15. The cleaning substrate of claim 13 , wherein the material comprises ammonium fluoride.
16. The cleaning substrate of claim 13 , wherein the material comprises cerium oxide.
17. A combination comprising:
the cleaning substrate of claim 13 ; and
a non-transitory computer program product comprising machine-readable instructions configured to cause a computer to cause providing of the cleaning substrate into contact with a part of an apparatus used in a patterning process while the part is attached to the apparatus, where upon the material chemically reacts with the contamination to dislodge the contamination on the part of the apparatus.
18. A method of comprising:
providing a cleaning substrate into contact with a movable the part of an apparatus used in a patterning process, the part arranged to support the cleaning substrate while the part is attached to the apparatus, the cleaning substrate comprising a material comprising cerium oxide and the cleaning substrate and/or part being wet; and
dislodging contamination on a surface of the part of the apparatus supporting the cleaning substrate by contact between the wet material and contamination.
19. The method of claim 18 , further comprising introducing relative movement between the cleaning substrate and the part of the apparatus to dislodge contamination from the part of the apparatus.
20. The method of claim 19 , wherein the introducing the relative movement comprises repeatedly bringing the cleaning substrate and the part of the apparatus into and out of contact and between at least a few of the occasions where the cleaning substrate is out of contact with the part of the apparatus, causing the cleaning substrate to be displaced or rotated so that a portion of the cleaning substrate comes into contact with a different portion of the part of the apparatus than it previously contacted.
21. The method of claim 20 , wherein the repetition is selected from the range of 2-40 instances per 5 minutes.