Cleaning agent composition for substrate for semiconductor device
In one aspect, provided is a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition having excellent cleaning properties against ceria and being capable of reducing a temporal change in the solubility of ceria. In one aspect, the present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition containing a component A, a component B, a component C, and a component D, the component A being sulfuric acid; the component B being ascorbic acid; the component C being at least one of thiourea and dithiothreitol and the component D being water.
1. A cleaning agent composition for a substrate for a semiconductor device, the cleaning agent composition containing a component A, a component B, a component C, and a component D,
the component A being sulfuric acid;
the component B being ascorbic acid;
the component C being at least one of thiourea and dithiothreitol; and
the component D being water.
2. The cleaning agent composition according to claim 1 ,
wherein a mass ratio BIC of a content of the component B to a content of the component C is 0.05 to 10 inclusive.
3. The cleaning agent composition according to claim 1 or 2 ,
wherein a total content of the component B and the component C at the time of cleaning is 0.001 mass % to 1 mass % inclusive.
4. The cleaning agent composition according to claim 1 ,
wherein a content of the component A at the time of cleaning is 0.005 mass % to 0.5 mass % inclusive.
5. The cleaning agent composition according to claim 1 , further containing
a dispersing agent (a component E).
6. A method for cleaning a substrate for a semiconductor device, the method comprising
a cleaning step of cleaning a substrate to be cleaned, using the cleaning agent composition according to claim 1 ,
wherein the substrate to be cleaned is a substrate that has processed polishing using a polishing liquid composition containing ceria.
7. A method for manufacturing a substrate for a semiconductor device, the method comprising
a cleaning step of cleaning a substrate to be cleaned, using the cleaning agent composition according to claim 1 ,
wherein the substrate to be cleaned is a substrate that has processed polishing using a polishing liquid composition containing ceria.
8. A method for manufacturing a substrate for a semiconductor device, the method comprising:
step 1 of polishing a substrate using a polishing liquid composition containing ceria; and
step 2 of cleaning a substrate that has been polished in the step 1, using the cleaning agent composition according to claim 1 .