Memory device and manufacturing method thereof
A memory device including a substrate, a stack structure, an isolation structure, an inter-gate dielectric layer, a control gate, a first insulation structure, a first gate dielectric layer, and a first gate. The stack structure is disposed on the substrate. The isolation structure is disposed in the substrate and disposed at two sides of the stack structure. The inter-gate dielectric layer covers the stack structure and the isolation structure. The control gate covers the inter-gate dielectric layer. The first insulation structure is disposed in the substrate, wherein a top surface of the first insulation structure is lower than a top surface of the substrate, so that a side surface of a portion of the substrate is exposed. The first gate dielectric layer is disposed on the top surface and the side surface of the substrate. The first gate covers the first gate dielectric layer.
1. A memory device, comprising:
a substrate comprising a first region and a second region, wherein the second region is adjacent to the first region;
a stack structure located in the first region and disposed on the substrate, wherein the stack structure comprises a gate dielectric layer and a floating gate, and the tunnel dielectric layer is located between the floating gate and the substrate;
an isolation structure located in the first region and disposed in the substrate and at two sides of the stack structure;
an inter-gate dielectric layer located in the first region and covering the stack structure and the isolation structure;
a control gate located in the first region and covering the inter-gate dielectric layer;
a first insulation structure located in the second region and disposed in the substrate, wherein a top surface of the first insulation structure is lower than a top surface of the substrate, and a side surface of a portion of the substrate is exposed;
a first gate dielectric layer located in the second region and disposed only on the top and the side surfaces of the substrate and terminating on the top surface of the first insulation structure; and
a first gate located in the second region and covering the first gate dielectric layer.
2. The memory device according to claim 1 , wherein a top surface of the isolation structure is lower than a top surface of the stack structure.
3. The memory device according to claim 1 , wherein the inter-gate dielectric layer comprises a composite layer comprising a silicon oxide layer and a silicon nitride layer.
4. The memory device according to claim 1 , wherein the first gate dielectric layer located on a recess of the side surface of the substrate in the second region.
5. The memory device according to claim 1 , wherein a material of the control gate and a material of the first gate comprise polycrystalline silicon, or metal.
6. The memory device according to claim 1 , wherein a material of the first gate dielectric layer comprises SiO2, HfO2, or ZrO2.
7. The memory device according to claim 1 , further comprising:
a second gate dielectric layer located in the second region and disposed on the substrate, wherein a top surface of the second gate dielectric layer is lower than a top surface of the inter-gate dielectric layer; and
a second gate located in the second region and covering the second gate dielectric layer.
8. The memory device according to claim 7 , wherein a top surface of a second insulation structure adjacent to the second gate is higher than the top surface of the substrate.
9. A memory device, comprising:
a substrate comprising a first region and a second region, wherein the second region is located adjacent to the first region;
a stack structure located in the first region and disposed on the substrate, wherein the stack structure comprises a gate dielectric layer and a floating gate, and the gate dielectric layer is located between the floating gate and the substrate;
an isolation structure located in the first region and disposed in the substrate and at two sides of the stack structure, wherein a top surface of the isolation structure is lower than a top surface of the stack structure;
an inter-gate dielectric layer located in the first region and covering the stack structure and the isolation structure;
a control gate located in the first region and covering the inter-gate dielectric layer;
a first insulation structure located in the second region and disposed in the substrate, wherein a top surface of the first insulation structure is lower than a top surface of the substrate, a portion of a side surface of the substrate has a recess above the top surface of the first insulation structure;
a first gate dielectric layer located in the second region and disposed only on the top surface of the substrate and the recess of the substrate, and terminating on the top surface of the first insulation structure; and
a first gate located in the second region and covering the first gate dielectric layer.