Sensing techniques using a charge transfer device
Techniques are provided for reading a memory cell capable of storing three or more logic states. To read the memory cell, a charge may be transferred between a digit line and a sense component using a charge transfer device. The charge may be transferred by biasing a gate of the charge transfer device to a first voltage and discharging the memory cell onto the digit line, which may result in the digit line being biased to a second voltage. Based on whether the second voltage exceeds the first voltage, the charge transfer device may transfer the charge associated with the memory cell (e.g., and discharged onto the digit line) to the sense component. A charge may be transferred from a memory cell to a sense component based on a value of the logic state stored to the memory cell.
1. A method, comprising:
biasing a gate of a first transistor to a first voltage, the first transistor coupled with a digit line via a second transistor and a sense component and configured to transfer a charge between the digit line and the sense component during a read operation;
biasing the digit line to a second voltage by discharging a memory cell onto the digit line, the memory cell being discharged based at least in part on biasing the gate of the first transistor;
transferring, by the first transistor, the charge between the digit line and the sense component based at least in part on the second voltage being less than the first voltage of the gate of the first transistor and activating the second transistor to couple the first transistor with the digit line; and
applying a third voltage to a node coupled with the sense component and a third transistor configured to compensate for a threshold voltage associated with the first transistor before biasing the gate of the first transistor to the first voltage, wherein biasing the gate of the first transistor to the first voltage is based at least in part on applying the third voltage to the node, and wherein applying the third voltage to the node coupled with the sense component further comprises:
activating a fourth transistor coupled with the node and the third transistor.
2. The method of claim 1 , further comprising:
deactivating the third transistor after the gate of the first transistor is biased to the first voltage causing the gate of the first transistor to float.
3. The method of claim 2 , further comprising:
maintaining, using a capacitor coupled with the gate of the first transistor, the first voltage of the gate of the first transistor when the third transistor is deactivated.
4. The method of claim 1 , further comprising:
activating the second transistor coupled with the digit line before biasing the gate of the first transistor to the first voltage, wherein biasing the gate of the first transistor is based at least in part on activating the second transistor.
5. The method of claim 4 , further comprising:
deactivating the second transistor after biasing the gate of the first transistor to the first voltage, wherein biasing the digit line to the second voltage is based at least in part on deactivating the second transistor.
6. The method of claim 5 , further comprising:
activating the second transistor after biasing the digit line to the second voltage, wherein the transferring the charge between the digit line and the sense component is based at least in part on activating the second transistor.
7. The method of claim 1 , wherein the memory cell comprises a multi-level cell.
8. An apparatus, comprising:
a memory cell coupled with a digit line;
a sense component coupled with the digit line;
a first transistor coupled with the digit line via a second transistor and the sense component;
a third transistor coupled with the first transistor and the sense component;
a controller coupled with the memory cell, the controller configured to:
bias a gate of the first transistor to a first voltage;
bias the digit line to a second voltage by discharging the memory cell onto the digit line, the memory cell being discharged based at least in part on biasing the gate of the first transistor;
transfer, by the first transistor, a charge between the digit line and the sense component based at least in part on the second voltage being less than the first voltage of the gate of the first transistor and activating the second transistor to couple the first transistor with the digit line; and
apply a third voltage to a node coupled with the sense component and the third transistor configured to compensate for a threshold voltage associated with the first transistor before biasing the gate of the first transistor to the first voltage, wherein biasing the gate of the first transistor to the first voltage is based at least in part on applying the third voltage to the node, and wherein applying the third voltage to the node coupled with the sense component further comprises:
activating a fourth transistor coupled with the node and the third transistor.
9. The apparatus of claim 8 , further comprising:
a voltage source coupled with a node of the first transistor, wherein the controller is operable to:
apply a fourth voltage from the voltage source to the node of the first transistor while the node of the first transistor is isolated from the digit line.
10. The apparatus of claim 9 , wherein the controller is operable to:
deactivate the second transistor after biasing the gate of the first transistor to the first voltage.
11. The apparatus of claim 9 , wherein the controller is operable to:
charge a second node coupled with the sense component and the first transistor; and
discharge the second node onto the gate of the first transistor based at least in part on applying the second voltage to the node of the first transistor.
12. The apparatus of claim 8 , wherein the controller is operable to:
deactivate the third transistor after biasing the gate of the first transistor to the first voltage.
13. The apparatus of claim 8 , wherein the memory cell comprises a multi-level cell configured to store three or more logic states.
14. A method, comprising:
biasing a gate of a first transistor to a first voltage, the first transistor coupled with a digit line and a sense component and configured to transfer a charge between the digit line and the sense component during a read operation;
biasing the digit line to a second voltage by discharging a memory cell onto the digit line, the memory cell being discharged based at least in part on biasing the gate of the first transistor;
transferring, by the first transistor, the charge between the digit line and the sense component based at least in part on the second voltage being less than the first voltage of the gate of the first transistor;
applying a third voltage to a node coupled with the sense component and a second transistor configured to compensate for a threshold voltage associated with the first transistor before biasing the gate of the first transistor to the first voltage, wherein biasing the gate of the first transistor to the first voltage is based at least in part on applying the third voltage to the node;
deactivating the second transistor after the gate of the first transistor is biased to the first voltage causing the gate of the first transistor to float; and
activating a third transistor to couple the first transistor with the digit line, wherein transferring the charge between the digit line and the sense component is based at least in part on activating the third transistor.
15. The method of claim 14 , further comprising:
maintaining, using a capacitor coupled with the gate of the first transistor, the first voltage of the gate of the first transistor when the second transistor is deactivated.
16. The method of claim 14 , wherein applying the third voltage to the node coupled with the sense component further comprises:
activating a fourth transistor coupled with the node and the second transistor.
17. The method of claim 14 , further comprising:
activating the third transistor coupled with the digit line before biasing the gate of the first transistor to the first voltage, wherein biasing the gate of the first transistor based at least in part on activating the third transistor.
18. The method of claim 17 , further comprising:
deactivating the third transistor after biasing the gate of the first transistor to the first voltage, wherein biasing the digit line to the second voltage is based at least in part on deactivating the third transistor.
19. The method of claim 18 , further comprising:
activating the third transistor after biasing the digit line to the second voltage, wherein the transferring the charge between the digit line and the sense component is based at least in part on activating the third transistor.
20. The method of claim 14 , wherein the memory cell comprises a multi-level cell.
21. An apparatus, comprising:
a memory cell coupled with a digit line;
a sense component coupled with the digit line;
a first transistor coupled with the digit line and the sense component;
a second transistor coupled with the first transistor and the sense component;
a controller coupled with the memory cell, the controller configured to:
bias a gate of the first transistor to a first voltage;
bias the digit line to a second voltage by discharging the memory cell onto the digit line;
transfer, by the first transistor, a charge between the digit line and the sense component based at least in part on the second voltage being less than the first voltage of the gate of the first transistor;
apply a third voltage to a node coupled with the sense component and the second transistor configured to compensate for a threshold voltage associated with the first transistor before biasing the gate of the first transistor to the first voltage, wherein biasing the gate of the first transistor to the first voltage is based at least in part on applying the third voltage to the node;
deactivate the second transistor after the gate of the first transistor is biased to the first voltage causing the gate of the first transistor to float; and
activate a third transistor to couple the first transistor with the digit line, wherein transferring the charge between the digit line and the sense component is based at least in part on activating the third transistor.
22. The apparatus of claim 21 , wherein the controller is operable to:
charge a second node coupled with the sense component and the first transistor; and
discharge the second node onto the gate of the first transistor based at least in part on applying the second voltage to a node of the first transistor.
23. The apparatus of claim 21 , wherein the memory cell comprises a multi-level cell configured to store three or more logic states.