IGBT module with heat dissipation structure having copper layers of different thicknesses
An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. The first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals. The first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively. The number of chips of the first layer of chips is larger than that of the second layer of chips such that the first copper layer has a greater thickness than the second copper layer.
1. An IGBT module with a heat dissipation structure, comprising: a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer; wherein, the thermally-conductive and electrically-insulating is disposed on the heat dissipation layer, the first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals, the first bonding layer and the second bonding layer are disposed on the first copper layer and the second copper layer, respectively, the first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively; wherein, number of chips of the first layer of chips is larger than that of the second layer of chips and an amount of heat generated by the first layer of chips is greater than that generated by the second layer of chips such that the first copper layer has a greater thickness than the second copper layer; wherein, the thermally-conductive and electrically-insulating layer is a polymer composite material filled with ceramic fillers; wherein, the thermally-conductive and electrically-insulating layer has a thickness of 60-200 μm; and wherein, the first copper layer has a thickness greater than 1000 μm.
2. The IGBT module with the heat dissipation structure according to claim 1 , wherein the second copper layer has a thickness of 200-1000 μm.
3. The IGBT module with the heat dissipation structure according to claim 1 , further comprising: a third layer of chips, a third bonding layer and a third copper layer; wherein the third copper layer, the first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals, the third bonding layer is disposed on the third copper layer, and the third layer of chips is disposed on the third bonding layer; and wherein number of chips of the third layer of chips is larger than that of the first layer of chips such that the third copper layer has a greater thickness than the first copper layer.