Quantum dot devices
Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
1. A quantum dot device, comprising:
a quantum well stack;
a plurality of first gate lines above the quantum well stack;
a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and
an array of regularly spaced magnet lines.
2. The quantum dot device of claim 1 , wherein the magnet lines in the array of magnet lines are parallel to each other.
3. The quantum dot device of claim 1 , wherein the first gate lines are at least partially between the second gate lines and the quantum well stack.
4. The quantum dot device of claim 3 , wherein the magnet lines are parallel to the first gate lines.
5. The quantum dot device of claim 4 , wherein the magnet lines are vertically aligned with the first gate lines.
6. The quantum dot device of claim 3 , wherein the magnet lines are parallel to the second gate lines.
7. The quantum dot device of claim 6 , wherein the magnet lines are vertically aligned with the second gate lines.
8. The quantum dot device of claim 1 , wherein the magnet lines are oriented diagonally to the first gate lines and the second gate lines.
9. The quantum dot device of claim 1 , wherein the first gate lines and the second gate lines are at a first face of the quantum well stack, and the magnet lines are at a second, opposite face of the quantum well stack.
10. The quantum dot device of claim 1 , wherein the magnet lines include a magnetic material.
11. The quantum dot device of claim 10 , wherein the magnet lines include cobalt.
12. The quantum dot device of claim 1 , wherein the magnet lines include a non-magnetic material.
13. The quantum dot device of claim 1 , wherein the magnet lines have a pitch between 5 nanometers and 200 nanometers.
14. A quantum computing device, comprising:
a quantum processing device, wherein the quantum processing device includes a quantum well stack, a plurality of first gate lines above the quantum well stack, a plurality of second gate lines above the quantum well stack, and an array of regularly spaced magnet lines, wherein the second gate lines are perpendicular to the first gate lines;
a non-quantum processing device, coupled to the quantum processing device, to control electrical signals applied to the first gate lines and the second gate lines; and
a memory device to store data generated during operation of the quantum processing device.
15. The quantum computing device of claim 14 , wherein the memory device is to store instructions for a quantum computing algorithm to be executed by the quantum processing device.
16. The quantum computing device of claim 14 , wherein the first gate lines and the second gate lines are at a first face of the quantum well stack, and the magnet lines are at a second, opposite face of the quantum well stack.
17. A quantum dot device, comprising:
a quantum well stack including a quantum well layer;
a plurality of gates above the quantum well layer; and
a plurality of magnets below the quantum well layer.
18. The quantum dot device of claim 17 , wherein the magnets include a magnetic material.
19. The quantum dot device of claim 17 , wherein the magnets include cobalt.
20. The quantum dot device of claim 17 , wherein quantum well stack includes silicon germanium.