Light-emitting devices with improved light outcoupling
Optoelectronic devices that include a composite film in a multilayered encapsulation stack are provided. Also provided are methods of forming the light reflection-modifying structures, as well as other polymeric device layers, using inkjet printing. The composite films include a first, lower refractive index domain and a second, higher refractive index domain.
1. An optoelectronic device comprising:
at least one active region; and
a multilayered encapsulation stack disposed over the at least one active region, the multilayered encapsulation stack comprising:
an inorganic barrier layer;
a composite film adjacent to the inorganic barrier layer and comprising a first domain and a second domain, the second domain comprising a plurality of sub-domains, wherein the second domain comprises inorganic particles dispersed in a polymeric matrix and has a higher index of refraction than the first domain.
2. The optoelectronic device of claim 1 , wherein the optoelectronic device is an organic light-emitting diode device and the at least one active region comprises a light-emitting pixel.
3. The optoelectronic device of claim 1 , wherein the inorganic barrier layer comprises silicon nitride, silicon oxide, or silicon oxynitride.
4. The optoelectronic device of claim 3 , wherein the inorganic particles comprise zirconium oxides, titanium oxides, hafnium oxides, zinc oxides, or a mixture of two or more thereof.
5. The optoelectronic device of claim 1 , wherein the inorganic particles comprise zirconium oxides, titanium oxides, hafnium oxides, zinc oxides, or a mixture of two or more thereof.
6. The optoelectronic device of claim 5 , wherein the polymeric matrix is an acrylic matrix.
7. The optoelectronic device of claim 1 , wherein the sub-domains are dome-shaped.
8. The optoelectronic device of claim 1 , wherein the sub-domains are cylindrical or conical in shape.
9. A method of forming an encapsulated optoelectronic device, the method comprising:
forming an inorganic barrier layer over at least one active region of the optoelectronic device;
inkjet printing a first curable ink composition as a plurality of droplets over the inorganic barrier layer;
curing the plurality of droplets to form a plurality of sub-domains on the inorganic barrier layer;
inkjet printing a second ink composition around the plurality of droplets or over the sub-domains; and
curing the second ink composition to form a first domain comprising a polymeric film around the sub-domains, wherein the sub-domains have a higher index of refraction than the first domain.
10. The method of claim 9 , wherein the optoelectronic device is an organic light-emitting diode device and the at least one active region comprises a light-emitting pixel.
11. The method of claim 9 , wherein the plurality of droplets is cured to form the plurality of sub-domains before the second ink composition is inkjet printed.
12. The method of claim 11 , wherein the sub-domains are dome-shaped.
13. The method of claim 9 , wherein the second ink composition is substantially immiscible with the first ink composition and further wherein the second ink composition is printed around the droplets of the first ink composition before the first and second ink compositions are cured.
14. The method of claim 13 , wherein the sub-domains are cylindrical or conical in shape.
15. The method of claim 9 , wherein the first ink composition comprises inorganic particles and one or more curable monomers, oligomers, or polymers.
16. The method of claim 15 , wherein the inorganic particles comprise zirconium oxides, titanium oxides, hafnium oxides, zinc oxides, or a mixture of two or more thereof.
17. The method of claim 16 , wherein the one or more curable monomers, oligomers, or polymers comprise one or more acrylate monomers, acrylate oligomers, or acrylate polymers.
18. The method of claim 9 , wherein the inorganic particles comprise zirconium oxides, titanium oxides, hafnium oxides, zinc oxides, or a mixture of two or more thereof.