IP Library Granted Patent US 11,047,822
Granted Patent B2
US 11,047,822 · App. 16/325,593 · Granted Jun 29, 2021

Sensor device

Inventors: Hiroshi Nakano (Tokyo, JP); Masahiro Matsumoto (Tokyo, JP); Yasuo Onose (Hitachinaka, JP); Hiroaki Hoshika (Hitachinaka, JP)
Assignee: HITACHI AUTOMOTIVE SYSTEMS, LTD.
G01N27/046G01F1/68G01N27/18H01C1/16H01C7/021H01C7/041H01L21/822H01L27/04
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Quick Facts
Patent No.
US 11,047,822
App. No.
16/325,593
Granted
Jun 29, 2021
Kind
B2
Abstract

A sensor device includes a detection resistor having a resistance value changing according to a physical quantity and a reference resistor compared with the detection resistor, the reference resistor is configured by electrically connecting a first resistance circuit and a second resistance circuit. The first resistance circuit includes a first and a second resistive element having positive and negative resistance temperature coefficients, respectively, which are electrically connected. The second resistance circuit includes a third and a fourth resistive elements having a positive and a negative resistance temperature coefficient, respectively, which are electrically connected. The first resistance circuit is configured to generate a first deviation to either the positive or negative side with respect to a temperature change, and the second resistance circuit is configured to generate a second deviation to the side opposite to the positive or negative side where the first deviation is generated.

Claims (17)

1. A sensor device that includes a detection resistor having a resistance value changing according to a physical quantity and a reference resistor compared with the detection resistor and that measures the physical quantity on the basis of a change in the resistance value of the detection resistor, wherein

the reference resistor is configured by electrically connecting a first resistance circuit and a second resistance circuit, the first resistance circuit including a first resistive element having a positive resistance temperature coefficient and a second resistive element having a negative resistance temperature coefficient that are electrically connected, the second resistance circuit including a third resistive element having a positive resistance temperature coefficient and a fourth resistive element having a negative resistance temperature coefficient that are electrically connected,

the first resistance circuit is configured such that a combined resistance value generates a first deviation to either the positive or negative side with respect to a temperature change, and

the second resistance circuit is configured such that a combined resistance value generates a second deviation to the side opposite to the positive or negative side where the first deviation is generated, with respect to the temperature change.

2. The sensor device according to claim 1 , wherein

the first resistance circuit comprises a series circuit in which the first resistive element and the second resistive element are connected in series, and

the second resistance circuit comprises a parallel circuit in which the third resistance element and the fourth resistance element are connected in parallel.

3. The sensor device according to claim 2 , wherein

the first resistive element and the third resistive element are formed of a polycrystalline silicon film of the same layer and

the second resistive element and the fourth resistive element are formed of a polycrystalline silicon film of the same layer.

4. The sensor device according to claim 3 , wherein the reference resistor is configured such that a combined resistance value of the series circuit and a combined resistance value of the parallel circuit are substantially the same.

5. The sensor device according to claim 3 , wherein

the first resistive element and the third resistive element are polycrystalline silicon doped with impurities of the same conductivity type and

the third resistive element and the fourth resistive element are polycrystalline silicon doped with impurities of a conductivity type different from the conductivity type of the first resistive element and the second resistive element.

6. The sensor device according to claim 3 , wherein

the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element are polycrystalline silicon doped with impurities of the same conductivity type, and

the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element are arranged such that a direction of a current flowing through the first resistive element and the second resistive element constituting the first resistance circuit and a direction of a current flowing through the third resistive element and the fourth resistive element constituting the second resistance circuit are orthogonal to each other.

Assignments (2)
CHANGE OF NAME Recorded Nov 22, 2021
From: HITACHI AUTOMOTIVE SYSTEMS, LTD.
To: HITACHI ASTEMO, LTD.
Reel/Frame 058598/0321 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2019
From: NAKANO, HIROSHI; MATSUMOTO, MASAHIRO; ONOSE, YASUO; HOSHIKA, HIROAKI
To: HITACHI AUTOMOTIVE SYSTEMS, LTD.
Reel/Frame 048341/0193 →
Priority Claims (1)
JP JP2016-161626 · Aug 22, 2016 · national
Continuity (1)
Related Publication 20190204251A1 · Jul 4, 2019