Methods of enhancing speed of reading data from memory device
A memory device includes N rows of memory cells and N word lines coupled thereto, respectively. A method of reading data from the memory device includes: applying a first pre-pulse voltage to an nth word line while applying a second pre-pulse voltage to an adjacent word line adjacent to the nth word line, the second pre-pulse voltage exceeding the first pre-pulse voltage, and n being an integer ranging from 1 to N; grounding the nth word line while maintaining the second pre-pulse voltage on the adjacent word line; pulling a voltage on the nth word line towards a start read level; and prior to the voltage on the nth word line reaching the start read level, driving a voltage on the adjacent word line to the first pre-pulse voltage.
1. A method of reading data from a memory device, the memory device comprising N rows of memory cells and N word lines coupled thereto, respectively, the method comprising:
driving an nth word line towards a first pre-pulse voltage while driving an adjacent word line adjacent to the nth word line towards a second pre-pulse voltage, the second pre-pulse voltage exceeding the first pre-pulse voltage, and n being an integer ranging from 1 to N;
pulling the nth word line from the first pre-pulse voltage to a ground voltage while maintaining the second pre-pulse voltage on the adjacent word line;
pulling a voltage on the nth word line from the ground voltage to a start read level; and
prior to the voltage on the nth word line reaching the start read level, starting to drive the adjacent word line from the second pre-pulse voltage to the first pre-pulse voltage.
2. The method of claim 1 , further comprising:
prior to the voltage on the nth word line reaching the start read level, floating the nth word line while driving the adjacent word line from the second pre-pulse voltage to the first pre-pulse voltage.
3. The method of claim 1 , further comprising:
maintaining the second pre-pulse voltage on the adjacent word line while pulling the voltage on the nth word line towards the start read level.
4. The method of claim 1 , wherein starting to drive the adjacent word line from the second pre-pulse voltage to the first pre-pulse voltage is performed a period of time after starting to pull the voltage on the nth word line towards the start read level.
5. The method of claim 1 , wherein driving the adjacent word line from the second pre-pulse voltage to the first pre-pulse voltage and pulling the nth word line from the ground voltage to the start read level are performed simultaneously.
6. The method of claim 1 , wherein the adjacent word line is an (n−1)th word line.
7. The method of claim 1 , wherein the adjacent word line is an (n+1)th word line.
8. The method of claim 1 , wherein the start read level is a negative voltage level for reading a lowest program state.
9. The method of claim 1 , further comprising:
in a read operation, pulling the voltage on the nth word line from the start read level to a next read level while maintaining a voltage on the adjacent word line at the first pre-pulse voltage.
10. The method of claim 9 , wherein the first pre-pulse voltage exceeds the next read level.
11. A method of reading data from a memory device, the memory device comprising N rows of memory cells and N word lines coupled thereto, respectively, the method comprising:
driving an nth word line towards a first pre-pulse voltage while driving an adjacent word line adjacent to the nth word line towards a second pre-pulse voltage, the second pre-pulse voltage exceeding the first pre-pulse voltage, and n being an integer ranging from 1 to N;
pulling the nth word line from the first pre-pulse voltage to a ground voltage while maintaining the second pre-pulse voltage on the adjacent word line; and
floating the adjacent word line while pulling a voltage on the nth word line from the ground voltage to a start read level.
12. The method of claim 11 , wherein the adjacent word line is an (n−1)th word line.
13. The method of claim 11 , wherein the adjacent word line is an (n+1)th word line.
14. The method of claim 11 , wherein the start read level is a negative voltage level for reading a lowest program state.
15. The method of claim 11 , further comprising:
in a read operation, pulling the voltage on the nth word line from the start read level to a next read level while maintaining a voltage on the adjacent word line at the first pre-pulse voltage.
16. The method of claim 15 , wherein the first pre-pulse voltage exceeds the next read level.