Method and system for backside planar view lamella preparation
The backside of a planar view lamella is prepared from a sample extracted from a workpiece. The sample includes multiple device layers and a substrate layer. After removing at least a part of the substrate layer covering a final device layer to obtain a sample surface, a region of interest (ROI) relative to the sample surface is alternately scanned with an electron beam and spontaneously etched until the final device layer within the ROI is exposed. One or more device layers may be removed from the sample backside after the final device layer is exposed to obtain the backside of the planar view lamella.
1. A method for processing a sample including at least a substrate layer and a device layer using charged particle beams, comprising:
removing at least a part of the substrate layer to obtain a sample surface;
scanning a region of interest (ROI) relative to the sample surface with an electron beam;
flowing a first gas towards the ROI to spontaneously etch the scanned ROI; and
scanning the etched ROI with the electron beam responsive to the device layer not being exposed in the ROI.
2. The method of claim 1 , further comprising acquiring a sample image including the etched ROI, and determining the device layer not being exposed in the ROI based on the sample image.
3. The method of claim 2 , wherein the sample image is a scanning electron microscopy (SEM) image, and a beam current of the electron beam for scanning the ROI is higher than a beam current for acquiring the sample image.
4. The method of claim 2 , wherein the sample image is an SEM image, and a beam energy of the electron beam for scanning the ROI is higher than a beam energy for acquiring the sample image.
5. The method of claim 2 , wherein a duration for scanning the ROI is longer than the duration for acquiring the sample image.
6. The method of claim 2 , wherein determining the device layer not being exposed in the ROI based on the sample image includes determining the etched ROI not flat based on the sample image.
7. The method of claim 2 , wherein determining the device layer not being exposed in the ROI based on the sample image includes determining a ratio between an area of the device layer exposed in the ROI and an area of the ROI not greater than a threshold ratio.
8. The method of claim 1 , wherein scanning the ROI with the electron beam includes scanning the ROI with the electron beam to deposit or dope the ROI with carbon.
9. The method of claim 1 , wherein flowing the first gas towards the sample surface includes flowing the first gas for a predetermined first, predetermined, duration.
10. The method of claim 1 , wherein removing at least a part of the substrate layer includes flowing a second gas towards the sample surface for a second duration to etch the sample surface, the second duration is longer than the first duration.
11. The method of claim 1 , wherein removing at least a part of the substrate layer includes milling the substrate layer with a focused ion beam.
12. A method for preparing a planar view lamella using charged particle beams, comprising:
extracting a sample from a workpiece with a focused ion beam, the sample includes at least a device layer and a substrate layer;
removing at least a part of the substrate layer from a backside of the sample to obtain a sample surface; and
alternately scanning a region of interest (ROI) relative to the sample surface with an electron beam and flowing a gas towards the scanned ROI, until the device layer is exposed within the ROI, wherein the scanned ROI is spontaneously etched by the gas.
13. The method of claim 12 , further comprising determining the device layer is exposed within the ROI responsive to a ratio between an area of the device layer exposed in the ROI and an area of the ROI greater than a threshold ratio.
14. The method of claim 12 , wherein the sample includes multiple device layers and the exposed device layer is a final device layer of the multiple device layers; and the method further comprising: removing at least one device layer of the multiple device layers from the backside of the sample after the final device layer is exposed within the ROI.
15. The method of claim 12 , further comprising forming the planar view lamella based on the sample with the device layer exposed; and imaging the planar view lamella with a transmission electron microscope.
16. The method of claim 12 , further comprising removing at least one device layer of the multiple device layers from a frontside of the sample, the frontside opposite from the backside.
17. A system for processing a sample including at least a substrate layer and a device layer, comprising:
a first column for forming a focused ion beam;
a second column for forming an electron beam;
a lower chamber coupled with both the first column and the second column;
a gas supply system coupled to the lower chamber; and
a controller, with instructions saved in a non-transitory memory, the controller is configured to:
remove at least a part of the substrate layer to obtain a sample surface;
scan a region of interest (ROI) relative to the sample surface with the electron beam;
flow a gas towards the ROI via the gas supply system to spontaneously etch the scanned ROI; and
scan the etched ROI with the electron beam responsive to the device layer not being exposed in the ROI.
18. The system of claim 17 , wherein the controller includes instructions to further mill the sample from a workpiece using the focused ion beam before removing the at least a part of the substrate layer to obtain the sample surface.
19. The system of claim 17 , wherein the sample includes multiple device layers, the device layer is a final device layer adjacent to the substrate layer, and the controller is further configured to remove one or more device layers with the focused ion beam in the presence of an etch-assisting gas after the final device layer in the ROI is exposed.
20. The system of claim 17 , wherein the controller is further configured to flow the gas towards the scanned ROI after scanning the etched ROI with the electron beam.