Imaging device including first and second imaging cells and camera system

1. An imaging device comprising:

a first imaging cell including

a first photoelectric converter that generates a first signal by photoelectric conversion, and

a first circuit that is electrically connected to the first photoelectric converter and detects the first signal; and

a second imaging cell including

a second photoelectric converter that generates a second signal by photoelectric conversion, and

a second circuit that is electrically connected to the second photoelectric converter and detects the second signal, wherein

sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell,

a frame rate of the first circuit is lower than a frame rate of the second circuit, and

the first circuit is configured to reduce first random noise that occurs when the first signal is reset once, and an amount of reducing the first random noise by the first circuit is greater than an amount of reducing second random noise that occurs when the second signal is reset once by the second circuit.

2. The imaging device according to claim 1 , wherein the first circuit is configured to reduce random noise more than the second circuit.

3. The imaging device according to claim 1 , wherein a number of capacitors included in the first circuit is larger than a number of capacitors included in the second circuit.

4. The imaging device according to claim 1 , wherein

the first photoelectric converter includes a first pixel electrode and a first photoelectric conversion region on the first pixel electrode,

the second photoelectric converter includes a second pixel electrode and a second photoelectric conversion region on the second pixel electrode,

the first circuit includes a first amplifier transistor that detects the first signal, a gate of the first amplifier transistor being electrically connected to the first pixel electrode,

the second circuit includes a second amplifier transistor that detects the second signal, a gate of the second amplifier transistor being electrically connected to the second pixel electrode, and

a gate width of the first amplifier transistor is larger than a gate width of the second amplifier transistor.

5. The imaging device according to claim 1 , wherein

the first photoelectric converter includes a first pixel electrode and a first photoelectric conversion region on the first pixel electrode,

the second photoelectric converter includes a second pixel electrode and a second photoelectric conversion region on the second pixel electrode,

the first circuit includes a first reset transistor that resets the first signal, one of a source and a drain of the first reset transistor being electrically connected to the first pixel electrode,

the second circuit includes a second reset transistor that resets the second signal, one of a source and a drain of the second reset transistor being electrically connected to the second pixel electrode, and

a gate length of the first reset transistor is larger than a gate length of the second reset transistor.

6. The imaging device according to claim 1 , wherein

the second photoelectric converter includes a second pixel electrode and a second photoelectric conversion region on the second pixel electrode, and

the second circuit includes a first capacitor that is electrically connected to the second pixel electrode, the first capacitor accumulating the second signal.

7. The imaging device according to claim 1 , further comprising a first feedback circuit including an inverting amplifier, wherein

the first photoelectric converter includes a first pixel electrode and a first photoelectric conversion region on the first pixel electrode,

the first circuit includes a first amplifier transistor that detects the first signal and a first reset transistor that resets the first signal, a gate of the first amplifier transistor being electrically connected to the first pixel electrode, one of a source and a drain of the first reset transistor being electrically connected to the first pixel electrode, and

the first feedback circuit forms a feedback path for negatively feeding back an electric potential of the first pixel electrode via the first amplifier transistor, the inverting amplifier, and the first reset transistor.

8. The imaging device according to claim 7 , wherein

the first circuit further includes a first capacitor, a second capacitor having a capacitance value larger than the first capacitor, and a first bandwidth control transistor; one end of the first capacitor being electrically connected to the first pixel electrode, one end of the second capacitor being electrically connected to the other end of the first capacitor, the other end of the second capacitor being set to a reference electric potential, one of a source and a drain of the first bandwidth control transistor being electrically connected to the other end of the first capacitor, and

the first feedback circuit forms a feedback path for negatively feeding back an electric potential of the first pixel electrode via the first amplifier transistor, the inverting amplifier, the first bandwidth control transistor, and the first capacitor.

9. The imaging device according to claim 8 , wherein the other one of the source and the drain of the first reset transistor is electrically connected to the one of the source and the drain of the first bandwidth control transistor.

10. The imaging device according to claim 8 , wherein the other one of the source and the drain of the first reset transistor is electrically connected to the other one of the source and the drain of the first bandwidth control transistor.

11. The imaging device according to claim 1 , further comprising a first feedback circuit, wherein

the first photoelectric converter includes a first pixel electrode and a first photoelectric conversion region on the first pixel electrode,

the first circuit includes a first amplifier transistor that detects the first signal, a first reset transistor that resets the first signal, a first capacitor, a second capacitor having a larger capacitance value than the first capacitor, and a first bandwidth control transistor, a gate of the first amplifier transistor being electrically connected to the first pixel electrode, one of a source and a drain of the first reset transistor being electrically connected to the first pixel electrode, one end of the first capacitor being electrically connected to the first pixel electrode, one end of the second capacitor being electrically connected to the other end of the first capacitor, the other one of the second capacitor being set to a reference electric potential, one of a source and a drain of the first bandwidth control transistor being electrically connected to the other end of the first capacitor,

one of a source and a drain of the first amplifier transistor is electrically connected to the other one of the source and the drain of the first bandwidth control transistor, and

the first feedback circuit forms a feedback path for negatively feeding back an electric potential of the first pixel electrode via the first amplifier transistor, the first bandwidth control transistor, and the first capacitor.

12. The imaging device according to claim 1 , further comprising a first feedback circuit, wherein

the first photoelectric converter includes a first pixel electrode and a first photoelectric conversion region on the first pixel electrode,

the first circuit includes a first amplifier transistor that detects the first signal, a first reset transistor that resets the first signal, a first capacitor, a second capacitor having a larger capacitance value than the first capacitor, a first bandwidth control transistor, and a first selection transistor, a gate of the first amplifier transistor being electrically connected to the first pixel electrode, one of a source and a drain of the first reset transistor being electrically connected to the first pixel electrode, one end of the first capacitor being electrically connected to the first pixel electrode, one end of the second capacitor being electrically connected to the other end of the first capacitor, the other end of the second capacitor being set to a reference electric potential, one of a source and a drain of the first bandwidth control transistor being electrically connected to the other end of the first capacitor, one of a source and a drain of the first selection transistor being electrically connected to one of a source and a drain of the first amplifier transistor, the other one of the source and the drain of the first selection transistor being electrically connected to the other one of the source and the drain of the first bandwidth control transistor, and

the first feedback circuit forms a feedback path for negatively feeding back an electric potential of the first pixel electrode via the first amplifier transistor, the first selection transistor, the first bandwidth control transistor, and the first capacitor.

13. The imaging device according to claim 1 , wherein

the first photoelectric converter includes a first pixel electrode and a first photoelectric conversion region on the first pixel electrode,

the first circuit includes a first amplifier transistor that detects the first signal, a first reset transistor that resets the first signal, a first capacitor, a second capacitor having a larger capacitance value than the first capacitor, a first bandwidth control transistor, and a first feedback circuit, a gate of the first amplifier transistor being electrically connected to the first pixel electrode, one of a source and a drain of the first reset transistor being electrically connected to the first pixel electrode, one end of the first capacitor being electrically connected to the first pixel electrode, one end of the second capacitor being electrically connected to the other end of the first capacitor, the other end of the second capacitor being set to a reference electric potential, one of a source and a drain of the first bandwidth control transistor being electrically connected to the other end of the first capacitor, a gate of the first bandwidth control transistor being electrically connected to the first pixel electrode, and

the first feedback circuit forms a feedback path for negatively feeding back an electric potential of the first pixel electrode via the first bandwidth control transistor and the first capacitor.

14. The imaging device according to claim 1 , wherein

a number of saturation electrons of the second imaging cell is larger than a number of saturation electrons of the first imaging cell.

15. The imaging device according to claim 1 , wherein a number of frames imaged by the first imaging cell per unit time is different from a number of frames imaged by the second imaging cell per unit time.

16. The imaging device according to claim 1 , wherein a number of transistors included in the first circuit is larger than a number of transistors included in the second circuit.

17. An imaging device comprising:

a first imaging cell including

a first photoelectric converter that generates a first signal by photoelectric conversion, and

a first circuit that is electrically connected to the first photoelectric converter and detects the first signal; and

a second imaging cell including

a second photoelectric converter that generates a second signal by photoelectric conversion, and

a second circuit that is electrically connected to the second photoelectric converter and detects the second signal, wherein

sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell,

an operation frequency of the first circuit is higher than an operation frequency of the second circuit,

a specific subject is detected from an image acquired by the second imaging cell; and

sensing using data acquired by the first imaging cell is started in response to detection of the specific subject.

18. The imaging device according to claim 17 , wherein a number of saturation electrons of the second imaging cell is larger than a number of saturation electrons of the first imaging cell.

19. An imaging device comprising:

a first imaging cell including

a first photoelectric converter that generates a first signal by photoelectric conversion, and

a first circuit that is electrically connected to the first photoelectric converter and detects the first signal; and

a second imaging cell including

a second photoelectric converter that generates a second signal by photoelectric conversion, and

a second circuit that is electrically connected to the second photoelectric converter and detects the second signal, wherein

sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell,

an operation frequency of the first circuit is higher than an operation frequency of the second circuit,

a specific subject is detected from an image acquired by the first imaging cell, and

sensing using data acquired by the second imaging cell is started in response to detection of the specific subject.

20. The imaging device according to claim 19 , wherein a number of saturation electrons of the second imaging cell is larger than a number of saturation electrons of the first imaging cell.

21. An imaging device comprising:

a first imaging cell including

a first photoelectric converter that generates a first signal by photoelectric conversion, and

a first circuit that is electrically connected to the first photoelectric converter and detects the first signal; and

a second imaging cell including

a second photoelectric converter that generates a second signal by photoelectric conversion, and

a second circuit that is electrically connected to the second photoelectric converter and detects the second signal, wherein

sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell,

a number of capacitors included in the first circuit is larger than a number of capacitors included in the second circuit, and

a frame rate of the first circuit is different from a frame rate of the second circuit.