Method for producing organic electroluminescent display device comprising polydiacetylene layers
This organic EL display device ( 100 ) is provided with an element substrate which comprises multiple pixels and which comprises organic EL elements ( 3 ) arranged in each pixel and bank layers ( 48 ) defining the pixels, and a thin-film sealing structure ( 10 ) which covers the pixels. The thin-film sealing structure includes a first inorganic barrier layer ( 12 ), and an organic barrier layer ( 14 ) in contact with the upper surface or lower surface of the first inorganic barrier layer. The multiple pixels include red pixels, green pixels and blue pixels, and further have a first polydiacetylene layer ( 52 a ) which exhibits a blue color and which is provided selectively on a second inorganic barrier layer ( 16 ) of the thin-film sealing structure on blue pixels, and a second polydiacetylene layer ( 52 b ) which exhibits a red color and which is provided selectively on the thin-film sealing structure on red pixels. The first and second polydiacetylene layers are a polymer of 10,12-pentacosadiynoic acid.
1. A method for producing an organic EL display device including a plurality of pixels, the organic EL display device comprising:
an element substrate including a substrate, a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels, and a bank layer defining the plurality of pixels; and
a thin film encapsulation structure covering the plurality of pixels,
wherein the thin film encapsulation structure includes a first inorganic barrier layer and an organic barrier layer in contact with a top surface or a bottom surface of the first inorganic barrier layer,
wherein the plurality of pixels include a red pixel, a green pixel and a blue pixel,
wherein the organic EL display device further includes a first polydiacetylene layer selectively provided on the thin film encapsulation structure on the blue pixel and exhibiting a blue color and a second polydiacetylene layer selectively provided on the thin film encapsulation structure on the red pixel and exhibiting a red color, and
wherein the first and second polydiacetylene layers are formed of a polymer of 10,12-pentacosadiynoic acid, wherein a step of forming the first and second polydiacetylene layers includes the steps of:
after the thin film encapsulation structure is formed, depositing 10,12-pentacosadiynoic acid on the thin film encapsulation structure by mask vapor deposition;
irradiating the 10,12-pentacosadiynoic acid with an electron beam or ultraviolet rays to form a polydiacetylene layer exhibiting a blue color; and
further irradiating only a region, of the polydiacetylene layer, to be the second polydiacetylene layer with the ultraviolet rays to change the region to a polydiacetylene layer exhibiting a red color by phase transition, and wherein the step of forming the thin film encapsulation structure includes the steps of:
preparing, in a chamber, the element substrate on which the first inorganic barrier layer is formed,
supplying a vapor-like or mist-like photocurable resin into the chamber,
condensing the photocurable resin on the first inorganic barrier layer to form a liquid film,
irradiating the liquid film of the photocurable resin with light to form a photocured resin layer, and
partially ashing the photocured resin layer to form the organic barrier layer.
2. The method of claim 1 , wherein the step of forming the thin film encapsulation structure includes the step of forming a silicon nitride layer, and
wherein after the silicon nitride layer is formed, the 10,12-pentacosadiynoic acid is deposited by the mask vapor deposition without exposing the silicon nitride layer to the atmosphere.
3. The method of claim 1 , wherein the organic barrier layer included in the thin film encapsulation structure is in contact with the top surface of the first inorganic barrier layer and includes a plurality of solid portions distributed discretely,
wherein the thin film encapsulation structure further includes a second inorganic barrier layer in contact with the top surface of the first inorganic barrier layer and top surfaces of the plurality of solid portions of the organic barrier layer, and
the first and second polydiacetylene layers are formed on the second inorganic barrier layer.
4. The method of claim 1 , wherein the first and second polydiacetylene layers are semiconductive.
5. The method of claim 4 , wherein the first polydiacetylene layer has a specific resistance smaller than, or equal to, 1×10 −1 Ωcm.
6. The method of claim 1 , further comprising an ultraviolet absorbing layer located on the first and second polydiacetylene layers.
7. The method of claim 1 , wherein the first inorganic barrier layer is formed of silicon nitride.
8. The method of claim 1 , wherein the first and second polydiacetylene layers each have a thickness of 0.5 μm or greater and 2.0 μm or less.
9. The method of claim 1 , wherein the first polydiacetylene layer provides a transmission spectrum of blue light in which the blue light has a peak wavelength in the range of 460 nm or longer and 470 nm or shorter.
10. The method of claim 9 , wherein the first polydiacetylene layer has a transmittance for the blue light higher than, or equal to, 80% at the peak wavelength thereof.
11. The method of claim 1 , wherein the second polydiacetylene layer provides a transmission spectrum of red light in which the red light has a peak wavelength in the range of 610 nm or longer and 630 nm or shorter.
12. The method of claim 11 , wherein the second polydiacetylene layer has a transmittance for the red light higher than, or equal to, 90% at the peak wavelength thereof.