Magnetic random access memory reference voltage generation
MRAM reference voltage generation is disclosed. In one aspect, a reference circuit for generating a reference level includes first and second non-overlapping paths from a first node to a second node, each path having a precision resistor in series with a set of two or more magnetic MRAM elements electrically connected in parallel. The first set of two or more MRAM elements are in a parallel state and the second set of two or more MRAM elements are in an anti-parallel state, or a first portion of the first and second sets of two or more MRAM elements are in a parallel state and a second portion of the first and second sets of two or more MRAM elements are in an anti-parallel state. A measurement circuit receives a first value indicative of a resistance between the first node and the second node and outputs a reference level based at least in part on the first value.
1. A reference circuit for generating a reference level, the reference circuit comprising:
first and second non-overlapping paths from a first node to a second node, the first path comprising a first precision resistor electrically connected in series with a first set of two or more magnetic random access memory (MRAM) elements electrically connected in parallel, the second path comprising a second precision resistor electrically connected in series with a second set of two or more MRAM elements electrically connected in parallel, wherein:
the first set of two or more MRAM elements are in a parallel state and the second set of two or more MRAM elements are in an anti-parallel state; or
a first portion of each of the first and second sets of two or more MRAM elements are in a parallel state and a second portion of each of the first and second sets of two or more MRAM elements are in an anti-parallel state; and
a measurement circuit configured to receive a first value indicative of a resistance between the first node and the second node and to output a reference level based at least in part on the first value.
2. The reference circuit of claim 1 , further comprising a comparator configured to receive the reference level at a first input and a signal related to a measured resistance of a target MRAM cell at a second input.
3. The reference circuit of claim 1 , wherein the MRAM elements comprise magnetic tunnel junctions (MTJs) having a parallel state and an anti-parallel state.
4. The reference circuit of claim 3 , wherein the MTJs comprise spin torque transfer (STT) MTJs.
5. The reference circuit of claim 3 , wherein the MTJs comprise voltage-controlled magnetic anisotropy (VCMA) MTJs.
6. The reference circuit of claim 3 , wherein the MTJs comprise spin-orbit torque (SOT) MTJs.
7. The reference circuit of claim 1 , wherein each of the first and second sets of two or more MRAM elements comprises two MRAM elements electrically connected in parallel.
8. The reference circuit of claim 1 , wherein each of the first and second sets of two or more MRAM elements comprises more than two MRAM elements electrically connected in parallel.
9. The reference circuit of claim 1 , wherein the first and second paths are electrically parallel.
10. The reference circuit of claim 1 integrated in at least one semiconductor die.
11. The reference circuit of claim 1 integrated into an apparatus selected from the group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, an Internet of things (IoT) device, a laptop computer, a server, and a device in an automotive vehicle.
12. A method of generating a reference level, the method comprising:
providing first and second non-overlapping paths from a first node to a second node, the first path comprising a first precision resistor electrically connected in series with a first set of two or more magnetic random access memory (MRAM) elements electrically connected in parallel, the second path comprising a second precision resistor electrically connected in series with a second set of two or more MRAM elements electrically connected in parallel, wherein:
the first set of two or more MRAM elements are in a parallel state and the second set of two or more MRAM elements are in an anti-parallel state; or
a first portion of each of the first and second sets of two or more MRAM elements are in a parallel state and a second portion of each of the first and second sets of two or more MRAM elements are in an anti-parallel state; and
providing a measurement circuit configured to receive a first value indicative of a resistance between the first node and the second node and to output a reference level based at least in part on the first value.
13. The method of claim 12 , further comprising comparing the reference level to a measured resistance of a target MRAM cell.
14. The method of claim 12 , wherein the MRAM elements comprise magnetic tunnel junctions (MTJs) having a parallel state and an anti-parallel state.
15. The method of claim 14 , wherein the MTJs comprise spin torque transfer (STT) MTJs.
16. The method of claim 14 , wherein the MTJs comprise voltage-controlled magnetic anisotropy (VCMA) MTJs.
17. The method of claim 14 , wherein the MTJs comprise spin-orbit torque (SOT) MTJs.
18. The method of claim 12 , wherein each of the first and second sets of two or more MRAM elements comprises two MRAM elements electrically connected in parallel.
19. The method of claim 12 , wherein each of the first and second sets of two or more MRAM elements comprises more than two MRAM elements electrically connected in parallel.
20. The method of claim 12 , wherein the first and second paths are electrically parallel.