Integrated semiconductor optical amplifier and laser diode at visible wavelength

1. An integrated semiconductor optical amplifier-laser diode (SOA-LD) device comprising:

a laser diode (LD) section fabricated on a substrate;

a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and

a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section;

wherein the SOA section is a nitride-based integrated SOA that functions in a visible wavelength (400 nm to 800 nm);

wherein the LD section and the SOA section share a first plurality of semiconductor layers, the first plurality of semiconductor layers comprising an electron blocking layer to aid electrical isolation of the LD section and the SOA section.

2. The integrated SOA-LD device of claim 1 , wherein the LD section further includes at least a first terminal, wherein the first terminal provides a LD drive current to the LD section without affecting the SOA section.

3. The integrated SOA-LD device of claim 2 , wherein the first plurality of semiconductor layers further comprises a contact layer, at least one waveguide layer and an active region, wherein the LD section generates a laser signal.

4. The integrated SOA-LD device of claim 3 , wherein the trench is formed between the LD section and SOA section by selectively removing the contact layer, without removing the waveguide layer such that the LD section and SOA section remain optically coupled via the waveguide layer.

5. The integrated SOA-LD device of claim 3 , wherein the SOA section amplifies the laser signal.

6. The integrated SOA-LD device of claim 2 , wherein the SOA section further includes at least a second terminal, wherein the second terminal provides an SOA drive voltage to the SOA section without biasing the LD section.

7. The integrated SOA-LD device of claim 6 , wherein the trench formed between the LD section and the SOA section results in removal of a contact layer associated with the first terminal on the LD section and second terminal on the SOA section to electrically isolate the LD section from the SOA section.

8. The integrated SOA-LD device of claim 7 , wherein the SOA drive voltage controls amplification of a laser signal generated in the LD section, and transmitted within the SOA section.

9. The integrated SOA-LD device of claim 1 , wherein an output power associated with a generated laser light is controlled via application of a drive current to the LD section via a first terminal and via application of a SOA drive voltage to the SOA section via a second terminal.

10. The integrated SOA-LD device of claim 9 , wherein at least one common ground terminal is presented to provide a current path for the operation of LD section and SOA section.

11. The integrated SOA-LD device of claim 9 , wherein the output power of the integrated SOA-LD device is controlled using a power supply unit.

12. The integrated SOA-LD device of claim 1 , wherein the first plurality of semiconductor layers defines a ridge waveguide.

13. The integrated SOA-LD device of claim 12 , wherein the ridge waveguide comprises a P-waveguide layer, the electron blocking layer, a multiple quantum well layer, and a N-waveguide layer.

14. The integrated SOA-LD device of claim 13 wherein the waveguide layers are Indium-Gallium-Nitride (InGaN) layers, the electron blocking layer is an Aluminum-Gallium Nitride layer (AlGaN), and the multiple quantum well layer includes a plurality of periods of Indium-Gallium-Nitride and Gallium-Nitride (InGaN/GaN) active regions.

15. A method of fabricating an integrated SOA-LD device that includes a laser diode (LD) device and a semiconductor optical amplifier (SOA), the method comprising:

depositing a first plurality of semiconductor layers on a substrate to fabricate waveguide layers and an active region comprised of a plurality quantum well layers, the plurality of quantum well layers including a plurality of periods of Indium- Gallium-Nitride and Gallium-Nitride (InGaN/GaN) active regions, wherein the first plurality of semiconductor layers are utilized for both the LD device and the SOA device;

depositing a second plurality of semiconductor layers on top of the first plurality of semiconductor layers to fabricate contacts, wherein the second plurality of semiconductor layers are utilized for both the LD device and the SOA device; and

forming an isolation trench between the LD device and the SOA device by etching a portion of the second plurality of semiconductor layers to form an isolation trench between the LD device and the SOA device, wherein the first plurality of semiconductor layers is not etched.

16. The method of claim 15 , wherein waveguide layers include a P-waveguide layer and an N-waveguide layer.

17. The method of claim 16 , wherein the P-waveguide layer is a p-type Indium-Gallium-Nitride (P-InGaN) layer.

18. The method of claim 17 , wherein the N-waveguide layer is an n-type Indium-Gallium-Nitride (N-InGaN) layer.

19. The method of claim 15 , wherein the first plurality of semiconductor layers further includes a cladding layer and an electron blocking layer, wherein the waveguide layers, the electron blocking layer, and quantum well layers define a ridge waveguide.