Integrated circuit package with a magnetic core

1. An integrated circuit (IC) package comprising:

a semiconductor die comprising a metal layer having first conductive traces and conductive pillars coupled to and extending from the metal layer;

a redistribution layer disposed below the semiconductor die and comprising second conductive traces, wherein a portion of the first conductive traces, a portion of the conductive pillars, and a portion of the second conductive traces are arranged to form a plurality of conductive coils of an inductive element disposed below a portion of the semiconductor die; and

a magnetic core disposed in the inductive element.

2. The IC package of claim 1 , wherein:

a first conductive coil of the conductive coils comprises a first conductive pillar of the portion of the conductive pillars, a second conductive pillar of the portion of the conductive pillars, a first conductive trace of the portion of the first conductive traces electrically coupled to the second conductive pillar, and a second conductive trace of the portion of the second conductive traces electrically coupled to the first and second conductive pillars.

3. The IC package of claim 2 , wherein:

the conductive coils comprise a second conductive coil coupled to and disposed adjacent to the first conductive coil;

the second conductive coil comprises a third conductive pillar of the portion of the conductive pillars, a fourth conductive pillar of the portion of the conductive pillars, a third conductive trace of the portion of the first conductive traces electrically coupled to the fourth conductive pillar, and a fourth conductive trace of the portion of the second conductive traces electrically coupled to the third and fourth conductive pillars; and

the third conductive pillar is electrically coupled to the second conductive trace.

4. The IC package of claim 1 , wherein the magnetic core is surrounded by the conductive coils of the inductive element.

5. The IC package of claim 4 , wherein the magnetic core comprises at least one magnetic film and at least one dielectric layer.

6. The IC package of claim 5 , wherein the at least one magnetic film comprises at least one of a ferromagnetic alloy, a cobalt-tantalum-zirconium (CoTaZr) alloy, a cobalt-iron (CoFe) alloy, or a nickel-iron (NiFe) alloy.

7. The IC package of claim 5 , wherein the at least one dielectric layer comprises silicon dioxide (SiO 2 ).

8. The IC package of claim 1 , further comprising a molding material disposed between the semiconductor die and the redistribution layer.

9. The IC package of claim 1 , further comprising conductive contacts disposed below the redistribution layer and electrically coupled to the redistribution layer, wherein the conductive contacts are electrically coupled to another portion of the conductive pillars through the redistribution layer.

10. The IC package of claim 9 , further comprising a conductive bump disposed below and electrically coupled to each of the conductive contacts.

11. The IC package of claim 1 , further comprising a capacitive element disposed below and electrically coupled to the redistribution layer.

12. The IC package of claim 11 , wherein the inductive element and the capacitive element are electrically coupled as a filter.

13. The IC package of claim 1 , wherein the semiconductor die comprises a portion of a switched-mode power supply circuit and wherein the switched-mode power supply circuit comprises the inductive element.

14. The IC package of claim 1 , further comprising:

a carrier;

a capacitive element coupled to the carrier;

a first chip package coupled to the carrier and comprising the semiconductor die, the redistribution layer, and the inductive element; and

a second chip package coupled to the carrier and comprising at least one other semiconductor die, wherein the semiconductor die, the inductive element, and the capacitive element of the first chip package are electrically coupled to the at least one other semiconductor die of the second chip package through the carrier.

15. The IC package of claim 14 , wherein:

the semiconductor die comprises a power supply circuit; and

the inductive element and the capacitive element are electrically coupled as a filter between the power supply circuit and the at least one other semiconductor die.

16. The IC package of claim 1 , wherein the IC package is a fan-out wafer level package.

17. A method of fabricating an integrated circuit (IC) package, comprising:

forming a semiconductor die comprising a metal layer having first conductive traces and conductive pillars coupled to and extending from the metal layer;

forming a redistribution layer disposed above the semiconductor die and comprising second conductive traces, wherein forming the redistribution layer comprises forming a plurality of conductive coils of an inductive element from a portion of the first conductive traces, a portion of the conductive pillars, and a portion of the second conductive traces; and

forming a magnetic core in the inductive element.

18. The method of claim 17 , wherein:

the conductive coils include a conductive coil formed by a first conductive pillar of the portion of the conductive pillars, a second conductive pillar of the portion of the conductive pillars, a first conductive trace of the first conductive traces electrically coupled to the second conductive pillar, and a second conductive traces of the second conductive traces electrically coupled to the first and second conductive pillars.

19. The method of claim 17 , wherein forming the magnetic core comprises forming the magnetic core between a first set of the portion of the conductive pillars and a second set of the portion of the conductive pillars.

20. The method of claim 17 , wherein:

forming the semiconductor die comprises forming the semiconductor die with a first substrate, cutting the semiconductor die from the first substrate, and coupling the semiconductor die to a second substrate; and

forming the redistribution layer comprises forming the redistribution layer above the semiconductor die coupled to the second substrate.