Antenna package for signal transmission

1. A method, comprising:

depositing a dielectric layer on a carrier substrate;

forming a die-attach film (DAF) over the dielectric layer;

forming one or more through interposer via wall (TIV-wall) structures and one or more TIV-grating structures on the dielectric layer, wherein a bottom surface of the one or more TIV-grating structures is in contact with a top surface of the dielectric layer;

disposing a die on the DAF;

encapsulating the die, the one or more TIV-wall structures, and the one or more TIV-grating structures to form an encapsulated package comprising one or more antenna regions; and

forming an interconnect structure on the encapsulated package, wherein the interconnect structure comprises one or more metal lines coupled to the die and the one or more TIV-wall structures.

2. The method of claim 1 , further comprising forming a second interconnect structure on the interconnect structure.

3. The method of claim 2 , further comprising:

forming a third interconnect structure on the second interconnect structure;

attaching solder bumps to the third interconnect structure;

attaching a printed circuit board to the solder bumps; and

removing the carrier substrate.

4. The method of claim 1 , wherein each of the one or more antenna regions comprises a space enclosed by each of the one or more TIV-wall structures, a group of the one or more TIV-grating structures, the interconnect structure, and the dielectric layer.

5. The method of claim 1 , wherein forming the one or more TIV-wall structures and the one or more TIV-grating structures on the dielectric layer comprises:

forming a photoresist layer on the dielectric layer;

etching the photoresist layer to form spaced apart first and second TIV openings;

depositing a titanium and copper seed layer structure on the photoresist layer;

electroplating a copper layer on the titanium and copper seed layer; and

removing the photoresist layer.

6. The method of claim 1 , wherein the dielectric layer comprises a polyimide (PI), a polybenzoxazole (PBO), a benzocyclobutene (BCB), an ajinomoto buildup film (ABF), a solder resist film (SR), or combinations thereof.

7. The method of claim 1 , wherein a first TIV-wall structure of the one or more TIV-wall structures is substantially parallel to an aligned direction of a first group of the one or more TIV-grating structures.

8. An antenna package, comprising:

a dielectric layer;

antenna region structures, wherein each of the antenna region structures comprises:

one or more through interposer via walls (TIV-walls); and

one or more TIV-gratings, wherein a bottom surface of the one or more TIV-gratings is in contact with a top surface of the dielectric layer;

a die attached to the dielectric layer and adjacent to the antenna region structures;

a molding compound disposed between the die and each of the antenna region structures; and

an interconnect layer disposed on the die and the antenna region structures.

9. The antenna package of claim 8 , wherein the interconnect layer comprises contacts configured to electrically connect to the die.

10. The antenna package of claim 8 , further comprising:

a second interconnect layer configured to electrically connect to the interconnect layer; and

solder bumps configured to electrically connect to the second interconnect layer.

11. The antenna package of claim 8 , wherein each of the one or more TIV-walls has a depth between about 120 μm and about 150 μm.

12. The antenna package of claim 8 , wherein each of the antenna region structures has a thickness between about 200 μm and about 2 mm.

13. The antenna package of claim 8 , wherein the molding compound has a dielectric constant between about 2.8 and about 3.0.

14. The antenna package of claim 8 , wherein the dielectric layer comprises a polyimide (PI), a polybenzoxazole (PBO), a benzocyclobutene (BCB), an ajinomoto buildup film (ABF), a solder resist film (SR), or combinations thereof.

15. The antenna package of claim 8 , wherein the antenna region structures comprise a first antenna region structure with a first TIV-wall and a first TIV-grating and a second antenna region structure with a second TIV-wall and a second TIV-grating.

16. A system, comprising:

a backside layer;

one or more dies;

antenna region structures, wherein each antenna region structure comprises:

a through interposer via wall (TIV-wall) configured to electrically couple to the one or more dies; and

a TIV-grating configured to electrically couple to one or more ground planes, wherein a bottom surface of the TIV-grating is in contact with a top surface of the backside layer;

a molding compound surrounding the one or more dies and the antenna region structures; and

a metal layer on the molding compound.

17. The system of claim 16 , wherein the molding compound has a dielectric constant between about 2.8 and about 3.0.

18. The system of claim 16 , wherein the TIV-wall has a depth between about 120 μm and about 150 μm.

19. The system of claim 16 , further comprising a protective layer comprising polybenzoxazole (PBO).

20. The system of claim 16 , wherein the backside layer comprises a polyimide (PI), a polybenzoxazole (PBO), a benzocyclobutene (BCB), an ajinomoto buildup film (ABF), a solder resist film (SR), or combinations thereof.