Light emitting device with reflector
This application describes a light emitting device or an assembly of light emitting devices. In the completed light emitting device, a distributed Bragg reflector minimizes the possibility of disturbing adjacent light emitting devices. Methods to fabricate such devices and assemblies of devices are also described.
1. A light emitting device comprising:
a light emitting diode (LED) having an LED top surface, an LED bottom surface, and a plurality of LED sidewalls, wherein the plurality of LED sidewalls are substantially orthogonal to the LED top and bottom surfaces, and wherein each LED sidewall is contiguous with at least the LED top surface or the LED bottom surface;
a first distributed Bragg reflector (DBR) having a first DBR first surface and a first DBR second surface, wherein the first DBR first surface and first DBR second surface are substantially parallel to the plurality of LED sidewalls;
a dielectric layer disposed between the LED and the first DBR; and
a first transistor, a second transistor, and a capacitor, wherein the LED overlies the first transistor, the second transistor, and capacitor, wherein the first transistor and second transistor comprise a single crystal semiconductor, and wherein the longest dimension of the capacitor is substantially orthogonal to the LED bottom surface.
2. The light emitting device of claim 1 , wherein the LED comprises gallium nitride, indium gallium nitride, indium arsenide, aluminum gallium arsenide, gallium arsenide, gallium phosphide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium arsenide nitride, aluminum indium arsenide, aluminum antimonide, indium phosphide, indium antimonide, or indium gallium arsenide phosphide, and combinations thereof.
3. The light emitting device of claim 1 , further comprising a wavelength-converting layer (W-CL) overlying the LED, wherein the W-CL comprises a W-CL top surface, a W-CL bottom surface, and W-CL sidewalls, and wherein the W-CL sidewalls are substantially parallel to the first DBR first surface and first DBR second surface.
4. The light emitting device of claim 3 , wherein the W-CL comprises quantum dots or quantum wells.
5. The light emitting device of claim 1 , further comprising a second DBR underlying the LED, the second DBR having a second DBR first surface and a second DBR second surface that are substantially parallel to the LIED bottom surface.
6. The light emitting device of claim 1 wherein the first DBR first surface is a cylinder.
7. An assembly of light emitting devices comprising:
a plurality of light emitting devices, each light emitting device comprising:
(a) a light emitting diode (LED) having an LED top surface, an LED bottom surface, and a plurality of LED sidewalls, wherein the plurality of LED sidewalls are substantially orthogonal to the LED top surface and LED bottom surface, and wherein each LED sidewall is contiguous with at least the LED top surface or the LED bottom surface;
(b) a distributed Bragg reflector (DBR) having a DBR first surface and a DBR second surface, wherein the DBR first surface and DBR second surface are substantially parallel to the plurality of LED sidewalls LED;
(c) a dielectric layer disposed between the LED and the DBR; and
(d) a first transistor, a second transistor, and a capacitor, wherein the LED overlies the first transistor, the second transistor, and capacitor, wherein the first transistor and second transistor comprise a single crystal semiconductor, and wherein the longest dimension of the capacitor is substantially orthogonal to the LED bottom surface; and
a plurality of wavelength-converting layers (W-CLs), wherein the plurality of W-CLs comprises at least a first W-CL and a second W-CL.
8. The assembly of light emitting devices of claim 7 wherein the LED comprises gallium nitride, indium gallium nitride, indium arsenide, aluminum gallium arsenide, gallium arsenide, gallium phosphide, gallium arsenide phosphide, aluminum indium gallium phosphide, gallium arsenide nitride, aluminum indium arsenide, aluminum antimonide, indium phosphide, indium antimonide, or indium gallium arsenide phosphide, and combinations thereof.
9. The assembly of light emitting devices of claim 7 wherein the first W-CL emits light with a dominant wavelength between 500 and 550 nm and a second W-CL emits light with a dominant wavelength between 610 and 730 nm.
10. The assembly of light emitting devices of claim 7 wherein the plurality of W-CLs comprises quantum dots or quantum wells.
11. The assembly of light emitting devices of claim 7 wherein the DBR first surface is a cylinder.
12. The assembly of light emitting devices of claim 7 wherein the pitch between adjacent light emitting devices is 50 microns or less.
13. The assembly of light emitting devices of claim 7 wherein the pitch between adjacent light emitting devices is 25 microns or less.