IP Library Granted Patent US 11,145,534
Granted Patent B2
US 11,145,534 · App. 16/194,014 · Granted Oct 12, 2021

Support unit and substrate treating apparatus comprising the same

Inventors: Seung Pyo Lee (Chungcheongnam-do, KR); Hyung Joon Kim (Gyeonggi-do, KR)
Assignee: SEMES CO., LTD.
H01L21/68742H01J37/3244H01J37/32715H01L21/67017H01L21/67109H01L21/6831H01L21/6833H01J2237/2001H01J2237/2007
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,145,534
App. No.
16/194,014
Granted
Oct 12, 2021
Kind
B2
Abstract

Disclosed are a support unit and a substrate treating apparatus comprising the same. The inventive concept provides a support unit that may prove temperature uniformity between facing areas on a substrate the other areas of the substrate and may solve a problem of not easily separating a substrate by a negative pressure in a pin hole when the substrate is separated from the support unit, and a substrate treating apparatus.

Claims (35)

1. A substrate treating apparatus comprising:

a chamber providing a treatment space to the interior of the substrate treating apparatus;

a support unit located in the treatment space and on which a substrate is positioned;

a gas supply unit configured to eject a process gas into the treatment space; and

a plasma generating unit configured to generate plasma from the process gas,

wherein the support unit comprises:

a lift pin configured to elevate through a pin hole formed in the support unit and configured to deliver the substrate to the support unit or receive the substrate from the support unit;

a gas line formed in the support unit to supply a heat transfer gas between the substrate positioned on the support unit and the support unit, the gas line extending through the support unit to an upper surface of the support unit and separated from the lift pin and pin hole, the gas line formed to supply the heat transfer gas to a space between a bottom surface of the substrate and the upper surface of the support unit; and

a supply line configured to supply the heat transfer gas to the pin hole,

wherein the support unit comprises:

an electrostatic chuck configured to suction the substrate by an electrostatic force;

an electrode plate disposed below the electrostatic chuck, the electrode plate comprising a plurality of refrigerant passages;

an insulation plate disposed below the refrigerant passages of the electrode plate; and

wherein the supply line is branched from the gas line in the insulation plate and is connected to the pin hole in the insulation plate.

2. The substrate treating apparatus of claim 1 , wherein the heat transfer gas is helium.

3. The substrate treating apparatus of claim 1 , wherein a valve configured to open and close the interior of the supply line is installed in the supply line.

4. The substrate treating apparatus of claim 1 , wherein a ventilation line that discharges the gas in the interior of the pin hole is connected to the pin hole and a valve that opens and closes the interior of the ventilation line is installed in the ventilation line.

5. The substrate treating apparatus of claim 4 , wherein the ventilation line is configured to vent the gas into the treatment space.

6. The substrate treating apparatus of claim 1 , wherein a plurality of pin holes are provided in the support unit and a plurality of supply lines are provided in the pin holes, respectively.

7. The support unit of claim 1 , further comprising:

a ventilation line that vents the gas in the interior of the pin hole into the treatment space, the ventilation line arranged in the insulation plate and connected to the pin hole; and

a valve that opens and closes the interior of the ventilation line is installed along the ventilation line within the insulation plate.

8. A support unit that supports a substrate, the support unit comprising:

a lift pin configured to elevate through a pin hole formed in the support unit and configured to deliver the substrate to the support unit or receive the substrate from the support unit;

a gas line formed in the support unit to supply a heat transfer gas to a space between a bottom surface of the substrate positioned on the support unit and an upper surface of the support unit, the gas line extending through the support unit to the upper surface of the support unit and separated from the lift pin and pin hole; and

a supply line configured to supply the heat transfer gas to the pin hole,

wherein the support unit comprises:

an electrostatic chuck configured to suction the substrate by an electrostatic force;

an electrode plate disposed under the electrostatic chuck, the electrode plate comprising a plurality of refrigerant passages; and

an insulation plate disposed below the refrigerant passages of the electrode plate,

wherein the gas line is configured to pass thorough the electrostatic chuck, the electrode plate, and the insulation plate,

wherein the lift pin is configured to elevate through a pin hole extending from the electrostatic chuck to the insulation plate in the interior thereof, and

wherein the supply line is branched from the gas line in the insulation plate and is connected to the pin hole in the plate.

9. The support unit of claim 8 , wherein the supply line is branched from the gas line and a valve configured to open and close the interior of the supply line is installed in the supply line.

10. The support unit of claim 8 , wherein a ventilation line that vents the gas in the interior of the pin hole is connected to the pin hole and a valve that opens and closes the interior of the ventilation line is installed in the ventilation line.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 16, 2018
From: LEE, SEUNG PYO; KIM, HYUNG JOON
To: SEMES CO., LTD.
Reel/Frame 047593/0373 →
Priority Claims (1)
KR 10-2017-0153615 · Nov 17, 2017 · national
Continuity (1)
Related Publication 20190157130A1 · May 23, 2019
Cited By (1)
US 12,716,132